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The Fourth Industrial Revolution and China’s Defense Innovation in Intelligent Systems
( Youngjune Chung ),( Shuting Dai ) 한국국방연구원 2022 The Korean Journal of Defense Analysis Vol.34 No.2
In the new era of the U.S.-China strategic rivalry, the Chinese People’s Liberation Army (PLA) is attempting to transform itself into a world class defense unit by constructing a self-organizing system of defense innovation. Translating its global lead in digitization and economic achievements into military power will entail the integration of critical and emerging technology into its existing weapon clusters and processes, the fielding of new and modified equipment, and the reinforcement of industrial applications such as robotics and autonomous vehicles. Building on developments in the PLA’s reform and modernization, this study conducts a systemic examination of China’s intelligentization strategy to prevail in the 4th Industrial Revolution (4IR). Hard and soft inputs that shape China’s ecosystem of defense-innovation, including material, financial, and technological inputs, process factors of plans, strategies, and acquisition, and institutional factors have been examined.
Chung, Jong Won,Park, Won-Tae,Park, Jeong-Il,Yun, Youngjun,Gu, Xiaodan,Lee, Jiyoul,Noh, Yong-Young American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.44
<P>We report a newly synthesized donor (D) acceptor (A)type semiconducting copolymer, consisting of thiophene as an electron-donating unit and thiazole as an electron-accepting unit (PQTBTz-TT-C8) for the active layer of the organic field-effect transistors (OFETs). Specifically, this study investigates the structure and electrical property relationships of PQTBTz-TT-C8 with comprehensive analyses on the charge transporting properties corresponding to the spin rate of the spin coater during the formation of the PQTBTz-TT-C8 film. The crystallinity of PQTBTz-TT-C8 films is examined with grazing incidence X-ray diffraction. Temperature-dependent transfer measurements of the OFETs are conducted to extract the density of states (DOS) and characterize the charge-transport properties. Comparative analyses on charge transports within the framework of the physical model, based on polaron hopping and Gaussian DOS, reveal that the prefactors of both physical charge-transport models are independent of the spin-coating condition for the films. For staggered structural transistors, however, the thickness of the PQTBTz-TT-C8 films, which strongly affect the series resistance along the charge-transfer path in a vertical direction, is changed in accordance with the spin-coating rate. In other words, the spin-coating rate of the PQTBTz-TT-C8 films influences the thickness of the polymer films, yet any significant changes in the crystallinity of the film or electronic coupling between the neighboring molecules upon the spin-coating condition were barely noticeable. Because the PQTBTz-TT-C8 backbone chains inside the thin film are stacked up with the edge-on, the series resistances are changed according to the thickness of the film and thus the performance of the device varies depending on the thickness.</P>
Youngjun Yun,Ajeong Choi,Suk Gyu Hahm,Jong Won Chung,Yong Uk Lee,Ji Young Jung,Joo-Young Kim,Jeong-Il Park,Sangyoon Lee,Jaewon Jang IEEE 2017 IEEE electron device letters Vol.38 No.5
<P>In this letter, we demonstrated a high performance organic thin-film transistor using thermally evaporated amorphous phase MoO<SUB>x</SUB> as a hole injection layer between metal electrodes and organic semiconductor. The fabricated organic thin-film transistors showed the field-effect mobility of 7 cm<SUP>2</SUP>/Vs in linear and saturation regimes and an ON/OFF current ratio of 10<SUP>7</SUP>. The MoO<SUB>x</SUB> hole injection layers significantly reduced the injection barrier from metal electrode, resulting in the improvement of ohmic contact properties of a synthesized thiophene-rich heteroacene, dibenzothiopheno [6,5-b:6',5'-f] thieno [3,2-b] thiophene p-type organic semiconductor, as compared with those with single metals. Furthermore, high performance organic thin-film transistors can be successfully realized with Al electrode, which is not suitable for p-type organic semiconductors due to its low work function by introducing a 75-nm-thick MoO<SUB>x</SUB> hole injection layer.</P>
Seo, Youngjun,Kim, Mihee,Choi, Minjoung,Kim, Sunhee,Park, Kidae,Oh, Ilung,Chung, Seungtae,Suh, Hongwon,Hong, Seunghwa,Park, Suenie S. Karger AG 2011 Pharmacology Vol.87 No.3
<P>Interferon ω (IFN-ω), a cytokine released during innate immune activation, is well known for promoting direct antiviral responses; however, the possible signal pathways that are initiated by IFN-ω binding to the type I IFN receptors have not been fully studied. Here, we provide evidence that activation of phosphoinositide-3-kinase/protein kinase B (PI3K/Akt) signaling plays a pivotal role in the generation of IFN-ω-mediated biological responses. We found that LY294002 (PI3K inhibitor)-attenuated antiviral activities are induced by IFN-ω treatment. Although such effects of LY294002 are unrelated to regulatory activities on IFN-ω-dependent Mx1 (myxovirus resistance 1) or Mx2 gene transcriptional regulation, translation of Mx1 protein, which was known as a key mediator of cell-autonomous antiviral resistance, was significantly reduced by PI3K inhibition. Further studies showed that PI3K inhibition using LY294002 leads to a decrease in PI3K substrate Akt and mitogen-activated protein kinase extracellular signal-regulated kinase and p38 phosphorylation/activation. In addition, although LY294002 was not able to reduce STAT1 activation, we found that the mammalian target of rapamycin (mTOR)/p70 S6 kinase pathway was significantly attenuated by inhibition of the PI3K/Akt signaling pathway. These results indicate that the PI3K/Akt pathway is a common and central integrator for antiviral responses in IFN-ω signaling via its regulatory effects on mTOR that are required for initiation of mRNA translation of Mx genes.</P><P>Copyright © 2011 S. Karger AG, Basel</P>
Lee, Youngjun,Jee, Won-Hee,Whang, Yoon Sub,Jung, Chan Kwon,Chung, Yang-Guk,Lee, So-Yeon Korean Society of Magnetic Resonance in Medicine 2021 Investigative Magnetic Resonance Imaging Vol.25 No.2
Purpose: To investigate the value of MR textural analysis, including use of diffusion-weighted imaging (DWI) to differentiate malignant from benign soft-tissue tumors on 3T MRI. Materials and Methods: We enrolled 69 patients (25 men, 44 women, ages 18 to 84 years) with pathologically confirmed soft-tissue tumors (29 benign, 40 malignant) who underwent pre-treatment 3T-MRI. We calculated MR texture, including mean, standard deviation (SD), skewness, kurtosis, mean of positive pixels (MPP), and entropy, according to different spatial-scale factors (SSF, 0, 2, 4, 6) on axial T1- and T2-weighted images (T1WI, T2WI), contrast-enhanced T1WI (CE-T1WI), high b-value DWI (800 sec/mm<sup>2</sup>), and apparent diffusion coefficient (ADC) map. We used the Mann-Whitney U test, logistic regression, and area under the receiver operating characteristic curve (AUC) for statistical analysis. Results: Malignant soft-tissue tumors had significantly lower mean values of DWI, ADC, T2WI and CE-T1WI, MPP of ADC, and CE-T1WI, but significantly higher kurtosis of DWI, T1WI, and CE-T1WI, and entropy of DWI, ADC, and T2WI than did benign tumors (P < 0.050). In multivariate logistic regression, the mean ADC value (SSF, 6) and kurtosis of CE-T1WI (SSF, 4) were independently associated with malignancy (P ≤ 0.009). A multivariate model of MR features worked well for diagnosis of malignant soft-tissue tumors (AUC, 0.909). Conclusion: Accurate diagnosis could be obtained using MR textural analysis with DWI and CE-T1WI in differentiating benign from malignant soft-tissue tumors.