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Numerical modeling of Ion-size effect on electroosmotic flow in nanochannels
Rajni,Prashant Kumar 장전수학회 2019 Proceedings of the Jangjeon mathematical society Vol.22 No.1
When fluids are confined in a structure at nanoscale, such as in a na-nochannel, the electric double layers (EDLs) from opposite walls may have strong interactions. This phenomena results in EDL overlap, which leads to significant changes in the electric field and the fluid properties. Electroosmotic flow (EOF) describes the motion of electrolyte due to the existence of an EDL. Ions in electrolyte have finite sizes which become comparable to EDL thickness in nanochannels and thus cannot be ne-glected during the formulation. Ion size have been shown to influence the extent of EDL overlapping in channel [S. Das and S. Chakraborty, Physical Review E, vol. 84, p. 012501, 2011]. The electrokinetic effects for a system that are not less than 10nm are examined, where van der Waals forces cease to be significant compared to the electrostatic forces. Thus, it is appropriate to apply continuum equations in modeling. For sys-tems below 10nm the continuum approach is not applicable but the un-derstanding based on continuum modeling are still beneficial as a quanti-tative reference. In this paper, the electroosmotic flow in nanochannels is investigated by using the asymmetric ion size model proposed by [Y. Han, S. Huang, and T. Yan, Journal of Physics: Condensed Matter, vol. 26, p. 284103, 2014]. The effect of size of ions on the flow behavior in na-nochannels is examined. The average electroosmotic mobility is obtained for both the cases of symmetric and asymmetric ion sizes for different nanochannel widths.
Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor
Rajni Gautam,Manoj Saxena,R. S.Gupta,Mridula Gupta 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.5
In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.
pH Dependent Studies of Chemical Bath Deposition Grown ZnO-SiO2 Core-Shell Thin Films
Rajni Seth,Sanjay Panwar,Sunil Kumar,T. W. Kang,H. C. Jeon 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.70 No.1
ZnO-SiO2 core-shell thin films were synthesized using chemical-bath deposition at different pH. Optical studies were done to optimize the thin films to find suitable parameters for solar cell buffer layers. These studies were done by measuring the transmission at 500 nm, which is the peak of the solar spectrum. All the parameters were seen to be highly pH dependent. The transmittance for a sample synthesized with a pH of 10.8 reached 85%. The transmittance was found not to depend on the bandgap values, but it was found possibly to depend on the fewer defect states created at a particular pH, as shown by Urbach energy and scanning electron microscopy (SEM) surface structure. An appreciable transmittance was observed in the blue region of the spectrum which had been missing until now in commercial CdS-based buffer layers. The Fourier-transform infrared and the energy dispersive X-ray spectra confirmed that the films were composed of only ZnO and silica only : no impurities were found. The urbach energy values and the SEM image of sample S3 clearly indicate the creation of fewer of defects, leading to higher crystallintiy and higher transmittance. Therefore, this shortcoming can be resolved by the substituted buffer layer of ZnO:SiO2 nano-composite thin film, which can enhance the blue response of the photovoltaic cells.
Predicting Faults before Testing Phase using Halstead’s Metrics
Rajni Sehgal,Dr. Deepti Mehrotra 보안공학연구지원센터 2015 International Journal of Software Engineering and Vol.9 No.7
Software designers are motivated to utilize off-the-shelf software components for rapid application development. Such applications are expected to have high reliability as a result of deploying trusted components. This paper introduces Halstead’s software science to predict the fault before testing phase for component based system. Halstead’s software science is used to predict the faults for individual component and based on this faults reliability of different component is measured so that only reliable component will be reused.
Rationality, Instrumentality, and the Affective
Rajni Palriwala 한국사회학회 2015 韓國社會學 Vol.49 No.3
This paper, based on ongoing work, looks at everyday crossings and mutual constructions of what are designated as separate spheres of the instrumental and the affective, a separation that has been valorised with capitalist modernity. Comparisons across cultures, classes, genders, and other lines of stratification indicate that the interpellations of instrumental rationality and the affective vary in form, articulation, and acceptability. These variations are not just individual and contingent, but are both structured and emergent, embedded in political economy as well as normative constructions of rationality and emotion. Despite critiques and alternative readings, the ubiquity of the conceptual and normative dichotomy between instrumental rationality and emotion persists. This has direct and indirect effects in the analyses, possibilities, and policies around care - paid and unpaid, informal and institutional. Hence, the concerns bear reiteration.
( Rajni Singh ) 한국영어영문학회 2015 영어 영문학 Vol.61 No.3
Salman Rushdie’s depiction of women is an area of much contention as critics down the ages have observed a strange ambiguous attitude that is central to his portrayal of women characters in his novels which makes Gayatri Spivak to observe that Rushdie’s “anxiety” to construct women in the history is an “honourable failure.” Although he portrays strong female characters, however, they are all peripheral to the plot and their actions have hardly any influence over the principal male characters of his novels. The present paper strives to analyze Rushdie’s attitude to the woman question with special reference to Shalimar the Clown as he revolts against the conventional phallocentric construction of gender as well as the religious fundamentalism that considers woman as the evil incarnate. His creation of unflinching and uncompromising women like Bhoomi/Boonyi Kaul, India/Kashmira, Firdaus Noman who defied the societal constrictions in achieving their own demands is intertwined with his aim of postcolonial historiography in construction of the history of the small village of Pachigam. A saga of rivalry and revenge over the sexual possession of a beautiful woman is interwoven with the territorial dispute of Kashmir, Rushdie’s cherished homeland. The loss of geographical paradise (Kashmir) is symbolically blended with women’s loss of autonomy and freedom. The paper aims at interrogating Rushdie’s (proto) feminist stance as on the one hand his sharp ironic tone undermines the prevalent gender discourse and on the other there is a strain of quiet submission to it.
Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor
Gautam, Rajni,Saxena, Manoj,Gupta, R.S.,Gupta, Mridula The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.5
In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.