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Study on the Etch Characteristics of BST Thin Films by Using Inductively Coupled Plasma
Gwan-Ha KIM,Chi-Sun Park,권광호,Chang-Il KIM,Dong-Pyo KIM,Kyoung-Tae KIM 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
In this study, BST thin lms were etched with inductively coupled CF4/(Cl2+Ar) plasmas. The etch characteristics of BST thin lms as a function of CF4/(Cl2+Ar) gas mixtures were analyzed by using quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The maximum etch rate of the BST thin lms was 53.6 nm/min, because a small addition of CF4 to the Cl2/Ar mixture increased the chemical eect. The prole of the etched BST lm is over 70 , but the etch residue is not found at the sidewall. The optimum condition appears to be a 10 % CF4/(Cl2 + Ar) gas mixture in the present work.
Ha, Min Gwan,Na, Youngseung,Park, Hee Young,Kim, Hyoung-Juhn,Song, Juhun,Yoo, Sung Jong,Kim, Yong-Tae,Park, Hyun S.,Jang, Jong Hyun The Korean Electrochemical Society 2021 Journal of electrochemical science and technology Vol.12 No.4
Electrochemical devices are constructed for continuous syngas (CO + H<sub>2</sub>) production with controlled selectivity between CO<sub>2</sub> and proton reduction reactions. The ratio of CO to H<sub>2</sub>, or the faradaic efficiency toward CO generation, was mechanically manipulated by adjusting the space volume between the cathode and the polymer gas separator in the device. In particular, the area added between the cathode and the ion-conducting polymer using 0.5 M KHCO<sub>3</sub> catholyte regulated the solution acidity and proton reduction kinetics in the flow cell. The faradaic efficiency of CO production was controlled as a function of the distance between the polymer separator and cathode in addition to that manipulated by the electrode potential. Further, the electrochemical CO<sub>2</sub> reduction device using Au NPs presented a stable operation for more than 23 h at different H<sub>2</sub>:CO production levels, demonstrating the functional stability of the flow cell utilizing the mechanical variable as an important operational factor.
Dry Etching of BST using Inductively Coupled Plasma
Gwan-Ha Kim,김경태,김동표,김창일 한국전기전자재료학회 2005 Transactions on Electrical and Electronic Material Vol.6 No.2
BST thin films were etched with inductively coupled CF4/(Cl2+Ar) plasmas. The etch characteristics of BST thin films as a function of CF4/(Cl2+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF4/Cl2/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF4 to the Cl2/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.
BCl₃/Ar 유도 결합 플라즈마 시스템에서 이온 에너지 분포에 따른 HfO₂ 박막의 식각
金瓘河(Gwan-Ha Kim),金徑兌(Kyoung-Tae Kim),金宗奎(Jong-Gyu Kim),禹鍾昌(Jong-Chang Woo),姜贊民(Chan Min Kang),金昌日(Chang-Il Kim) 대한전기학회 2007 전기학회논문지 Vol.56 No.2
In this work, we investigated etching characteristics of HfO₂ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of HfO₂ thin film is 85.5 ㎚/min at a BCl₃/(BCl₃+Ar) of 20 % and decreased with further addition of BCl₃ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDs) showed a maximum at 20 % of BCl₃. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of HfO₂ over Si is 3.05 at a O₂ addition of 2 seem into the BCl₃/(BCl₃+Ar) of 20 % plasma.
Etching Properties of ZnS:Mn Thin Films in an Inductively Coupled Plasma
Kim, Gwan-Ha,Woo, Jong-Chang,Kim, Kyoung-Tae,Kim, Dong-Pyo,Kim, Chang-Il The Korean Institute of Electrical and Electronic 2008 Transactions on Electrical and Electronic Material Vol.9 No.1
ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.
BCl₃/Ar 유도 결합 플라즈마 시스템에서 이온 에너지 분포에 따른 HfO₂ 박막 식각
김관하(Gwan-Ha Kim),김경태(Kyoung-Tae Kim),김종규(Jong-Kyu Kim),우종창(Jong-Chang Woo),강찬민(Chan Min Kang),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
In this work, we investigated etching characteristics of HfO₂ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by Quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of HfO₂ is 85.5 ㎚/min at a BCl₃(BCl₃+Ar) of 20% and decreased with further addition of BCl₃ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of BCl₃. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of HfO₂ over Si is 3.05 at a O2 addition of 2 sccm into the BCl₃/(BCl₃+Ar) of 20% plasma.
Dry Etching of BST using Inductively Coupled Plasma
Kim, Gwan-Ha,Kim, Kyoung-Tae,Kim, Dong-Pyo,Kim, Chang-Il The Korean Institute of Electrical and Electronic 2005 Transactions on Electrical and Electronic Material Vol.6 No.2
BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.
사중극자 질량 분석기를 이용한 BCl₃/Ar 유도결합 플라즈마 특성 진단
金瓘河(Gwan-Ha Kim),金昌日(Chang-Il Kim) 대한전기학회 2006 전기학회논문지C Vol.55 No.4
In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as BCl₃/Ar gas mixing ratio, RF power, and process pressure. As the BCl₃/Ar gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between BCl₃ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.