Polyimide 기판을 이용한 CVD-Cu 박막 형성기술

조남인,임종설,설용태 한국산학기술학회 2000 한국산학기술학회논문지 Vol.1 No.1

유기금속 화학기상중착기술에 의해 폴리이미드 가판과 질화티탄 기판 위에 구라박막을 형성하였다. 그리박막을 화학기상 증착기술에 의해 형성하면 종래의 물리적증착기술에 비하여 증적속도가 빠르고 층덮힘 성질이 좋아 산업체의 제품생산 응용에서 많은 장점이 있다. 이 장점은 제품의 생산성과 신뢰성에 영향을 마친다. 기판의 온도와 구리전구체 증기압력 조건을 변화시키며 반복실험을 실시하였으며, 시편에 따라서는 전기적 성질 향상을 위하여 후속 열처리를 수행하였다. 형성된 구리박막의 미세구조는 전자현미경으로 관찰하였으며 전기비저항은 4점 프로브를 이용하여 즉정하였다 질화티탄을 기판으로 사용한 경우 구리박막 에서는 섭씨 180도의 기판온도에서 만들어진 시편에서 가장 좋은 전기적 성질이 측정되었다. 한편 폴리이미드 기판을 사용한 경우, 기상과 액상의 혼합상태 전구체를 이용하여 250 ㎚/min의 매우 높은 증착속도를 얻을 수 있었다. Copper thin films have been prepared by a metal organic chemical vapor deposition (MOCVD) technology on polyimide and TiN substrates. The Cu-MOCVD technology has advantages of the high deposition rate and the good step coverage compared with the conventional physical vapor deposition (PVD) technology in several industrial applications. The Cu films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were annealed in a vacuum condition after the deposition. and the annealing effect on the electrical properties of the films was measured. The crystallinity and the microstructures of the films were observed by scanning electron microscopy (SEM). and tho electrical resistivity was measured by 4-point probe. ln the case of the Cu deposition on TiN substrate. the best electrical property of the films was measured for the samples prepared at 180 ℃. Very high deposition rate of the Cu film up to 250 ㎚/min was obtained on the polyimide substrate when the mixture of liquid and vapour precursor was used.

폴리이미드형 8인치 정전기척의 제조

조남인,박순규,설용태 한국반도체디스플레이기술학회 2002 반도체디스플레이기술학회지 Vol.1 No.1

A polyimide-type electrostatic chuck (ESC) was fabricated for the application of holding 8-inch silicon wafers in the oxide etching equipment. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on top of thin coated copper substrates for the good electrical contacts, and the helium gas cooling technique was used for the temperature uniformity of the silicon wafers. The ESC was essentially working with an unipolar operation, which was easier to fabricate and operate compared to a bipolar operation. The chucking force of the ESC has been measured to be about 580 gf when the applied voltage was 1.5 kV, which was considered to be enough force to hold wafers during the dry etching processing. The employment of the ESC in etcher system could make 8% enhancement of the wafer processing yield.

2. 전공정 부품/Module 기술

조남인 반도체 제조장비국산화 연구센터 1998 반도체장비학술심포지움 Vol.1998 No.-

■반도체 제조장비의 구분 ·전공정 장비(FAB 장비) 반도체 집적회로칩 제조를 위한 제반장비 ·후공정 장비(PKG / TEST 장비) 반도체 조립 및 성능시험에 관련된 장비 ■ 차세대 반도체 장비의 특징 ·300mm 실리콘 웨이퍼용 공정라인의 도입 -균일도의 공정기술이 요구됨 (예. 대면적용 히터, 고밀도 플라즈마 기술) ·새로운 공정기술 / 장비의 도입 -최소선폭의 감소에 의한 새로운 노광장비 -소자의 고속화를 위한 구리배선 -정보의 저장용량 증가를 위한 강유전체사용 -초평탄화를 위한 CMP 기술 -막질개선을 위한 CVD 기술의 확대 -장비의 cluster화

An Experimental Study of Metal-Insulator-Metal(MIM) Tunneling Devices

조남인 선문대학교 1994 鮮文論叢 自然科學 編 Vol.- No.4

MIM 터널 다이오드는 현재까지 개발된 전자 소자 중에서 가장 빠른 동작을 가지며, 초고조파 소자는 물론 광학 소자에도 응용이 가능한 것으로 알려져 있다. 양자역학적인 터널현상을 이용한 이 다이오드는 금속 전극 사이에 아주 얇은 절연층이 위치하는 구조를 하고 있으며, 반도체 소자 제조 기술의 급속한 발전에 힘입어 종래의 접점형 구조 외에도 박막형 구조의 연구도 활발하게 진행 중에 있다. 본 연구에서는 "+"자 구조를 가진 MIM 터널 다이오드를 사진식각기술로써 제작하여 저주파 특성을 조사하였다. 본 실험에서는 실리콘 기판을 산화시키고, 그 위에 MIM 다이오드를 제작하였으며, 기수의 대칭성(odd-symmefry)을 갖는 비선형 특성을 나타내었다. 접합 부분의 면적에 따라 시정수의 값이 현저히 변하였고, 진공 열처리를 함으로써 특성을 개선할 수 있었다. 접합 면적은 최소 10마이크로 X 10마이크로이었으며, 알루미늄을 이용한 MIM 다이오드의 경우 영의 바이어스 조건(self-bias)에서 시정수 10nsec의 특성을 보여 주었다. 이 시정수를 개선하기 위해서는, 고전압 펄스를 두 전극사이에 가하는 방법(electrical forming)이 알려져 있고, 접합부분의 구조를 바꾸어서 접합면적을 줄이는 방법도 유용할 것으로 예측하고 있다.

화학적기상증착법에 의한 구리박막의 전기전도도 개선에 관한 연구

조남인,김용석,김창교 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.6

For the applications in the ultra-large-scale-integration (ULSI) metallization processing copper thin films have been prepared by metal organic chemical vapor deposition (MOCVD) technology on TiN/Si substrates. The films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were then annealed in a vacuum condition after the deposition and the annealing effect to the electrical conductivity of the films was measured. The grain size and the crystallinity of the films were observed to be increased by the post annealing and the electrical conductivity was also increased. The best electrical property of the copper film was obtained by in-situ annealing treatment at above 40$0^{\circ}C$ for the sample prepared at 18$0^{\circ}C$ of the substrate temperature.

Coxiella burnetii 보체결합항체 검사에 의한 경기지역 젖소에 있어서의 Q열에 대한 혈청학적 조사연구

조남인,이용욱 한국환경보건학회 1994 한국환경보건학회지 Vol.20 No.3

Regarding to Q fever which is one of the most important zoonoses in Food (Milk) Hygiene and in Environmental Public Health, a sero-epidemiological study was carried out to detect the complement fixation antibodies to Coxiella burnetii Nine Mile strain phase II antigen among the milking cows in Kyunggi Province. The results obtained were summarized as follows: 1. The overall prevalence of the CF antibodies to Q fever among 989 milking cows of 75 dairy farms in Kyunggi Province was revealed as high as 58.7% by the farms and 27.8% by the individual cows with higher prevalence in Kyunggi Central and Kyunggi East regions than any other regions in the Province. 2. Anticomplementary reactions were appeared as 7.5% (74/989) and it ranged from 1.0% to 16.0% according to the regions investigated. 3. In the titration of the positively reacted sera, the figures of 16.7%, 37.5%, 29.8%, 9.5%, 2.9% and 3.6% at the serum dilutions of 1: 10, 1: 20, 1: 40, 1: 80, 1: 160 and higher than 1: 160, respectively. 4. It was recognized that the relatively higher cumulated frequency distribution of the CF antibodies was shown in the sera collected from the regions with higher prevalence of Q fever. 5. There was a high correlation between the prevalence of Q fever CF antibodies and the age which is usually equivalent to one year older than the calving history of the milking cows.

실리콘과 코발트 박막의 계면구조에서 발생하는 1/f 잡음현상 연구

조남인,남형진,박종윤 한국진공학회 1996 Applied Science and Convergence Technology Vol.5 No.1

We present a microscopic description for generation of 1/f noise in interfaces between cobalt thin film and silicon substrate. Along with surface resistance measurements and transmission electron diffraction observations. 1/f noise power spectral density has been measured for the interfacial structures at the liquid nitrogen temperature . The cobalt films have been deposited by the electron-beam evaporation technique onto p-type (100) silicon in the high vacuum condition. The measured noise power spectral density shows highest magnitude near the structural transition and metallization transition region. The noise magnitude rapidly decreased after the cobalt silicide nucleation. The noise parameter is concluded to be originated form the structural fluctuations.

실리콘 기판에 증착된 코발트 박막의 잡음특성 연구

조남인,유순재 대한전자공학회 1996 전자공학회논문지-A Vol.33 No.2

In an effort to learn more about the reaction mechanisms which lead to the compound nucleation at the interface of cobalt and silicon, electrical noise properties has been investigated for cobalt thin films deposited on silicon substrates by the electron beam evaporation and rf sputtering techniques. Microstructural variations at the Co/Si interfaces have been observed by transmission electronmicroscopy. Amorphous structures are observed at the Co/Si interfaces for samples whose cobalt thicknesses are less than 4nm and a polycrystalline compound nucleation has been occurred for thicker films. 1/f noise power same samples, and the spetral density has been normalized. The amplitude of 1/f noise power spectral density shows a gradual increase as the cobalt thickness is increased, and the amplitude has dropped abruptly after the compound nucleation. The variations of the noise parameters areassumed to be an indiction of the phase transformation along the nucleation reaction path, and amplitude has been interpreted as instabilities of the Co/Si interfacial structures.

열교환 부품용 발열체 형성기술

조남인,김민철 한국반도체디스플레이기술학회 2003 한국반도체장비학회지 Vol.2 No.4

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

국제수역사무국(OIE) 제65차 총회

조남인,강영권 대한수의사회 1997 대한수의사회지 Vol.33 No.6