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남형진,장경희,박경룡,김재석 대한전자공학회 1996 전자공학회논문지-A Vol.33 No.6
We presetn sytem-level simulation methodology as well as environment setup established for CDMA digtial cellular mobile station in an effort to verify CDMA modem ASIC design. To make the system-level simulation feasible, behavioral modeling of a microcontroller was first carried out with VHDL. In addition, models written in C language were also developed to provide ASIC with realistic input data. Finally, the netlist of CDMA modem ASIC was loaded on the a hardware accelerator, which was interfaced with VHDL simulator, and ismulation was performed by excuting the actual CDMA call processing software. Simulation resutls thus obtained were confirmed by comparing them with the emulation resutls from the actual system constructed on hardware modeler. these methods were proved to be effective in both discovering in advance malfunctions when embedded in the system or design errors of ASIC and reducing simulation time by a factor of as much as 20 in case of simulation at gate-level.
남형진,Nam, Hyoung-Gin 한국반도체디스플레이기술학회 2007 반도체디스플레이기술학회지 Vol.6 No.2
Characteristics of an active pixel switch readout circuit were studied by SPICE simulation. A simple readout circuit consists of an operation amplifier, a diode, and a down-counter was suggested, and its successful operation was verified by showing that the differences in the detected signal intensity are accordingly converted to modulation of the voltage pulses generated by the comparator. A scheme to use these pulses to generate the original image was also put forward.
남형진,Nam, Hyoung-Gin 한국반도체디스플레이기술학회 2008 반도체디스플레이기술학회지 Vol.7 No.2
Silicide formation process and the formation sequence were investigated in this study. It was postulated that the formation of the second silicide phase involves glass formation between the first silicide phase and Si given that a thin metal film is deposited on a Si substrate. The concentration of glass was assumed to be located where the free energy of the liquid alloy with respect to the first nucleated compound and solid Si (${\Delta}$G') is most negative. It was also mentioned that the glass concentration is close to the composition of the second phase in order to achieve the maximum energy degradation. It was shown that the minimum ${\Delta}$G' concentration can be estimated by interpolating the portion of the liquidus where the liquid alloy is in equilibrium with the two solid constituents, namely the first compound phase and Si, thereby forming a hypothetical eutectic.
증착조건에 따른 undoped ZnO 박막의 특성 변화
남형진,이규항,조남인,Nam, Hyoung-Gin,Lee, Kyu-Hwang,Cho, Nam-Ihn 한국반도체디스플레이기술학회 2008 반도체디스플레이기술학회지 Vol.7 No.3
In this study, we investigated variations in undoped ZnO thin film properties with working pressure, $O_2$/Ar ratio, and annealing ambient. Higher vacuum pressure during deposition was observed to bring about slower growth rate resulting in samples with better crystallinity as well as hole generation efficiency through formation of shallower oxygen interstitial. Given that $O_2$/Ar ratio is greater than unity, O provided from the ambient to ZnO during annealing was found to preferably situate at interstitial sites. When He was used for the second annealing, significant changes were not observed. On the other hand, O ambient caused increased density of oxygen interstitial, thereby making the film more intrinsic-like high resistivity ZnO.
$CoSi_2$ 전극 구조의 증착법에 따른 특성 변화 연구
남형진,Nam, Hyoung-Gin 한국반도체디스플레이기술학회 2007 반도체디스플레이기술학회지 Vol.6 No.4
Phase transition and dopant redistribution during silicidation of $CoSi_2$ thin films were characterized depending on their preparation methods. Our results indicated that cleanness of the substrate surface played an important role in the formation of the final phase. This effect was found to be reduced by addition of W resulting in the formation of $CoSi_2$. However, even in this case, the formation of the final phase was achieved at the cost of extra thermal energy, which induced rough interface between the substrate and the silicide film. As for the dopant redistribution, the deposition sequence of Co and Si on SiGe was observed to induce significant differences in the dopant profiles. It was found that co-deposition of Co and Si resulted in the least redistribution of dopants thus maintaining the original dopant profile.
ZnO를 사용한 MOS 커패시터의 제작 조건에 따른 특성 변화
남형진,Nam, H.G.,Tang, W.M. 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.3
In this study we investigated the electrical properties of ZnO-based MOS capacitor with $HfO_2$ as the gate dielectric. MIM capacitor, which uses either $HfO_2$ or $Al_2O_3$ as the dielectric layer, is also studied to understand the dependency of the dielectrics on the preparation conditions. It was found that thinner $HfO_2$ films yield better electrical properties, namely lower leakage current and higher breakdown electric field. These properties were observed to deteriorate when subsequently annealed. Capacitance in the depletion region of MOS capacitor was found to increase with UV ozone treatment time up to 60min. However, when the treatment time was extended to 120min, the trend is reversed. The 'threshold voltage' was also observed to positively shift with UV ozone treatment time up to 60min. The shift apparently saturated for longer treatment.
Enhanced Crystallization of Si at Low Temperatureby O2 Flow during Deposition
남형진,구경환 한국반도체디스플레이기술학회 2007 반도체디스플레이기술학회지 Vol.6 No.2
Effects of O2 flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on SiO2 substrates in a low-pressure chemical vapor deposition chamber using a mixture of SiH4 and H2. In some cases O2 was intentionally introduced during deposition. Growth of polysilicon was observed at the substrate temperature as low as 480C when O2 was flowed during deposition implying that crystallization of Si was enhanced by O2 flow. On the other hand, O2 flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by O2 flow was suggested from these results.
Feasibility of using vanadium to form damascene structures with an air gap
남형진,Myungsub Shin,조남인,윤의중 한국물리학회 2007 Current Applied Physics Vol.7 No.6
We have studied the feasibility of fabricating multi-level interconnects using air as an interlayer dielectric material. In particular, wefabricated dual damascene structures using the via-rst approach without etch stop layers required for trench formation, which opens upthe possibility of further lowering the eective dielectric constant. Dual damascene structures were formed by sequential deposition ofdium, vanadium pentoxide, and hydrogen peroxide was found suitable for the conventional silicon technology. Based on the ndings inthis study a novel process for the air gap formation was proposed, which may be applied even to the substrate level.