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파괴인성 JIC 와 파단면에서 측정한 미세조도와의 상관 관계
오태성 대한금속재료학회(대한금속학회) 1995 대한금속·재료학회지 Vol.33 No.4
Correlations of the critical fracture strain ε_f and the fracture toughness J_(lc) with the microroughness measured on the fracture surfaces have been investigated for HP9-4-20 steel and ASTM A710 steel with different strength level. The critical fracture strain ε_f was proportional to the local microroughness (1/3)·ln(M²/3f_p) measured on the fracture surfaces. Fracture toughness J_(lc) was in good agreement with (σ_o/3)·ln(M²/3f_p)·l_o and could be estimated using the microroughness parameter M, the characteristic distance l_o, and the effective yield stress σ_o.
오태성,최재식,현도빈,O, Tae-Seong,Choe, Jae-Sik,Hyeon, Do-Bin 한국재료학회 1995 한국재료학회지 Vol.5 No.2
Mechanical alloying behavior of the PbTe intermetallic compound, which is used for thermoelectric generation, has been investigated with milling time and ball-to-powder weight ratio. Formation of PbTe alloy was completed by mechanical alloying of the as-mixed Pb and Te powders for 2 minutes at ball-to-powder weight ratio of 2 : 1. In situ measurement of the abrupt temperature rise during the ball milling process indicated that the PbTe intermetallic compound was formed by a self-sustained reaction rather than diffusional reactions. Lattice constant of PbTe alloy fabricated by mechanical alloying, 0. 6462nm, was not varied with milling time and ball-to-powder weight ratio. This value of the lattice parameter is in excellent agreement with 0.6459nm, which was reported for PbTe powders processed by melting and grinding. 열전발전용 재료인 PbTe의 밀링 시간, 볼과 분말의 무게비에 따른 기계적 합금화 거동을 연구하였다. Pb와 Te 분말을 볼과 분말의 무게비 2 : 1에서 2분간 기계적 합금화 함으로써 PbTe 금속간 화합물의 형성이 완료되었다. 밀링 공정중 vial 표면 온도의 in situ 측정에서 기계적 합금화에 의한 PbTe 금속간 화합물의 형성이 분말 계면에서의 확산 공정보다는 합금화 반응이 자발적으로 전파하는 자전 반응에 의하여 이루어지는 것을 알 수 있었다. 기계적 합금화로 제조한 PbTe 합금분말의 격자상수는 0.6462nm로 용해 및 분쇄법으로 제조한 PbTe 분말에서 보고된 값인 0.6459nm와 잘 일치하였으며, 밀링 시간의 증가 및 볼과 분말의 무게비의 변화에 의하여 변하지않았다.
Flip-Chip Process using Heat Transfer from an Induction-Heating Film
오태성,이광용,이윤희,정부양 대한금속·재료학회 2009 METALS AND MATERIALS International Vol.15 No.3
A new flip-chip technology to attach an IC chip directly to a substrate was studied using the heat transfer from an induction-heating film in an AC magnetic field. When applying a magnetic field of 230 Oe at 14 kHz, the temperature of a 600 μm-thick 5 mm × 5 mm Cu induction-heating film reached 250 °C within 60 s. The temperature of the glass substrate used in this process was kept below 118 °C at a distance of 1,350 μm from the Cu induction-heating film, which was maintained at 250 °C, implying that damage to a substrate can be minimized with the flip-chip process using heat transfer from an induction-heating film. Flip-chip bonding was successfully accomplished with the reflow of Sn-3.5Ag solder bumps by applying a magnetic field of 230 Oe at 14 kHz for 120 s to a Cu induction-heating film. A new flip-chip technology to attach an IC chip directly to a substrate was studied using the heat transfer from an induction-heating film in an AC magnetic field. When applying a magnetic field of 230 Oe at 14 kHz, the temperature of a 600 μm-thick 5 mm × 5 mm Cu induction-heating film reached 250 °C within 60 s. The temperature of the glass substrate used in this process was kept below 118 °C at a distance of 1,350 μm from the Cu induction-heating film, which was maintained at 250 °C, implying that damage to a substrate can be minimized with the flip-chip process using heat transfer from an induction-heating film. Flip-chip bonding was successfully accomplished with the reflow of Sn-3.5Ag solder bumps by applying a magnetic field of 230 Oe at 14 kHz for 120 s to a Cu induction-heating film.
발진부 귀환 스위칭회로를 이용한 이동통신 단말기용 듀얼대역 전압제어 발진기 특성에 관한 연구
오태성,이영훈 한국전자파학회 2002 한국전자파학회논문지 Vol.13 No.1
본 논문에서는 발진부 귀환경로에 스위칭소자를 이용하여 최소의 소자을 사용한 소형화된 새로운 방식의 이동통신 단말기용 듀얼대역 VCO(Voltage Control Oscillator)를 제안하였다. VCO에 공진기의 Q(Quality factor)값을 정확히 모델링하기 위하여 공진기를 등가 모델하고, 이론 수치 해석하여 최적의 공진기를 설계하였다. 본 논문에서 제안된 방식을 적용하여 GSM(Global System for Mobile), DCS(Digital Cordless System) 대역의 동작 주파수를 갖는 듀얼대역 전압제어 발진기를 설계하였으며, 논문의 객관성을 입증하기 위해 제작 및 실험을 통하여 새로 제안된 방식의 듀얼대역 전압제어 발진기의 실용화가 가능함을 확인하였고, 앞으로 차세대 이동통신 기기의 고주파 부품 등에 응용될 수 있을 것이다. In this paper, the dual band VCO of mobile communication terminal using oscillation part switching circuit is proposed. In order to model the VCO accurately, the resonator is converted the equivalent circuit which is analyzed to use numerical method and designed optimal the dual band VCO operating GSM and DCS band. In order to demonstrate the objective theory of the proposed VCO, the dual band VCO is designed and experimented. The results of experiment, it is conformed that the VCO can be used mobile communication hand phone and components of three generation mobile communication systems.
Island-Bridge 구조의 강성도 경사형 신축 전자패키지의 유효 탄성계수 및 변형거동 분석
오태성 한국마이크로전자및패키징학회 2019 마이크로전자 및 패키징학회지 Vol.26 No.4
A stiffness-gradient soft PDMS/hard PDMS/FPCB stretchable package of the island-bridge structure was processed using the polydimethylsiloxane (PDMS) as the base substrate and the more stiff flexible printed circuit board (FPCB) as the island substrate, and its effective elastic modulus and stretchable deformation characteristics were analyzed. With the elastic moduli of the soft PDMS, hard PDMS, and FPCB to be 0.28 MPa, 1.74 MPa, and 1.85 GPa, respectively, the effective elastic modulus of the soft PDMS/hard PDMS/FPCB package was analyzed as 0.58 MPa. When the soft PDMS of the soft PDMS/hard PDMS/FPCB package was stretched to a tensile strain of 0.3, the strains occurring at hard PDMS and FPCB were found to be 0.1 and 0.003, respectively. Polydimethylsiloxane (PDMS)를 베이스 기판으로 사용하고 이보다 강성도가 높은 flexible printed circuit board (FPCB)를 island 기판으로 사용하여 island-bridge 구조의 soft PDMS/hard PDMS/FPCB 신축 패키지를 형성하고, 이의 유효 탄성계수와 변형거동을 분석하였다. 각기 탄성계수가 0.28 MPa, 1.74 MPa 및 1.85 GPa인 soft PDMS, hard PDMS, FPCB를 사용하여 형성한 soft PDMS/hard PDMS/FPCB 신축 패키지의 유효 탄성계수는 0.58 MPa로 분석되었다. Soft PDMS/hard PDMS/FPCB 신축 패키지에서 soft PDMS의 변형률이 0.3이 되도록 인장시 hard PDMS와 FPCB 의 변형률은 각기 0.1과 0.003이었다.