HVPE로 성장된 GaN의 용융 KOH/NaOH 습식화학에칭

박재화,홍윤표,박철우,김현미,오동근,최봉근,이성국,심광보,Park, Jae Hwa,Hong, Yoon Pyo,Park, Cheol Woo,Kim, Hyun Mi,Oh, Dong Keun,Choi, Bong Geun,Lee, Seong Kuk,Shim, Kwang Bo 한국결정성장학회 2014 한국결정성장학회지 Vol.24 No.4

수소화기상증착에피탁시로 성장된 GaN 단결정의 표면 특성을 정밀하게 측정하기 위해, 용융 KOH/NaOH 습식화학에칭법을 적용하였다. KOH/NaOH 습식화학에칭법에 에칭속도는 기존의 황산, 인산과 같은 etchant에 비해 느린데, 이는 불용성 코팅층의 형성에 의한 것이다. 따라서 이 방법으로 etch pits density를 더 효율적으로 평가할 수 있었다. 성장된 GaN 단결정을 XRD(X-Ray Diffraction), XRC(X-ray rocking curve)로 결정성을 분석하였으며, 에칭 특성과 표면 형상은 주자전자현미경을 이용하여 관찰하였다. 에칭 실험 결과 격자결함들이 독립적으로 잘 분리되어 있고 그들의 형태가 명확하게 나타나는 최적 에칭 조건은 $410^{\circ}C$, 25분이었다. 이 조건에서 얻은 결함밀도 값은 $2.45{\times}10^6cm^{-2}$이었으며, 이는 상업적으로 이용 가능 한 정도의 재료임을 확인할 수 있었다. The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.

The influence of contact material on lateral wet-etching of nickel thin films in lamellae structure

Kim, Jeong Hwan,Jeong, Jik-Han,Lee, Seung-Hun,Kim, Kwanoh,Yoon, Jae Sung,Choi, Doo-Sun,Yoo, Yeong-Eun Elsevier 2018 THIN SOLID FILMS - Vol.660 No.-

<P><B>Abstract</B></P> <P>The characteristics of lateral Ni film etching by nitric-acid-based etchant are examined using samples with patterned lamellar layers consisting of SiO<SUB>2</SUB>/Ni/Al<SUB>2</SUB>O<SUB>3</SUB>/Ni/Al<SUB>2</SUB>O<SUB>3</SUB> toward the fabrication of hierarchical structures. The lateral etching length increased with increasing etching time, despite the difficult penetration of the etchant through the nanoscale passages in the lamellar layers. However, a higher etching rate (2.1 nm s<SUP>−1</SUP>) was observed in the lower Ni film that is in contact with SiO<SUB>2</SUB> and Al<SUB>2</SUB>O<SUB>3</SUB> layers on the bottom and top, respectively, compared to that (1.6 nm s<SUP>−1</SUP>) of the upper Ni film that contacts with only Al<SUB>2</SUB>O<SUB>3</SUB> on both bottom and top sides, due to stronger wetting of SiO<SUB>2</SUB>, inducing easier penetration of the etchant into the nanoscale passage between the surrounding layers. Moreover, the influence of Ni film thickness on the lateral etching characteristic was also investigated. The difference in the lateral etching length of the upper and lower Ni films decreases when the Ni film thickness is increased, because of the reduced proportion of the interface region with respect to the Ni-film volume. Despite different contact materials, similar lateral etching lengths were observed in the 150-nm-thick Ni films due to negligible effect of the contact materials in the lamellar structure.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Lateral Ni film etching characteristics by nitric-acid-based etchant are investigated. </LI> <LI> Lateral film etching rate via nanoscale passage varies depending on contact materials. </LI> <LI> Difference in lateral etching length decreases when Ni film thickness is increased. </LI> <LI> Similar lateral etching lengths were observed in the 150 nm-thick Ni films. </LI> </UL> </P>

화학적 습식 에칭을 통한 AlN와 GaN의 결함 및 표면 특성 분석

홍윤표,박재화,박철우,김현미,오동근,최봉근,이성국,심광보,Hong, Yoon Pyo,Park, Jae Hwa,Park, Cheol Woo,Kim, Hyun Mi,Oh, Dong Keun,Choi, Bong Geun,Lee, Seong Kuk,Shim, Kwang Bo 한국결정성장학회 2014 한국결정성장학회지 Vol.24 No.5

화학적 습식 에칭을 통해 AlN와 GaN의 결함 및 표면 특성을 분석했다. 화학적 습식 에칭은 단결정의 결함을 선택적으로 에칭하기 때문에 결정의 품질을 평가하는 좋은 방법으로 주목 받고 있다. AlN와 GaN의 단결정은 NaOH/KOH 용융액을 이용하여 에칭을 했으며, 에칭 후 표면 특성을 알아보기 위해 주사전자현미경(SEM)과 원자힘 현미경(AFM)을 촬영했다. 에치 핏의 깊이를 측정하여 표면에 따른 에칭 속도를 계산했다. 그 결과 AlN와 GaN 표면에는 두 개의 다른 형태에 에치 핏이 형성 되었다. (0001)면의 metal-face(Al, Ga)는 육각 추를 뒤집어 놓은 형태를 갖는 반면 N-face는 육각형 형태의 소구 모양(hillock structure)을 하고 있었다. 에칭 속도는 N-face가 metal-face(Al, Ga)보다 각 각 약 109배(AlN)와 5배 정도 빨랐다. 에칭이 진행되는 동안 에치 핏은 일정한 크기로 증가하다 서로 이웃한 에치 핏들과 합쳐지는 것으로 보여졌다. 또한 AlN와 GaN의 에칭 공정을 화학적 메커니즘을 통해 알아 보았는데, 수산화 이온($OH^-$)과 질소의 dangling bond에 영향을 받아 metal-face(Al, Ga)와 N-face가 선택적으로 에칭되는 것으로 추론되었다. We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.

습식 식각을 이용한 MWCNT-PMDS 변형율 센서 전극 생성에 관한 연구

정라희 ( La-hee Jung ),황희윤 ( Hui-yun Hwang ) 한국복합재료학회 2021 Composites research Vol.34 No.6

본 논문에서는 습식 식각으로 제작된 구리 전극을 가진 다중벽 탄소나노튜브 PDMS 복합재료 변형율 센서의 전기적 특성을 고찰하였다. MWCNT의 질량분율에 따라 MWCNT-PDMS 변형율 센서를 제작한 후, 전극 부착 표면을 습식 식각한 후 은-에폭시 전도성 접착제를 이용하여 구리 박판을 부착하였다. 2-프로브 방법으로 변형율 센서의 전기 전도성을 측정한 결과, 초기 저항은 MWCNT 함량과 식각 시간에 반비례하였지만 30% 변형율에 대한 저항 변화율은 MWCNT 함량과 식각 시간에 비례하였다. 100회 반복 하중 시험 후 저항 변형율 감소는 MWCNT 함량이 증가할수록 식각 시간이 짧아질수록 상대적으로 작게 나타났다. 이는 식각에 의해 MWCNT-PDMS 변형율 센서의 초기 저항 감소에 기인한 것으로 판단된다. This paper investigated the electrical properties of multiwall carbon nanotube reinforced polydimethylsiloxane (CNT-PDMS) strain sensors with copper electrodes on the wet-etched surface. MWCNT-PDMS strain sensors were fabricated according to the wt% of MWCNT. Surfaces on the electrode area were wet-etched with various etching duration and silver epoxy adhesives were spread on the wet-etched surface. Finally, we attached the copper electrodes to the MWCNT-PMDS strain sensors. We checked the electric conductivities by the two-probe method and sensing characteristics under the cyclic loading. We observed the electric conductivity of MWCNT-PDMS strain sensors increased sharply and the scattering of the measured data decreased when the surface of the electrode area was wet-etched. Initial resistances of MWCNT-PDMS strain sensors were inversely proportion to wt% of MWCNT and the etching duration. However, the resistance changing rates under 30% strain increased as wt% of MWCNT and the etching duration increased. Decreasing rate of the electric resistance change after 100 repetitions was smaller when wt% of MWCNT was larger and the etching duration was short. This was due to the low initial resistance of the MWCNT-PMDS strain sensors by the wet-etching.

실리콘 반도체 에칭기술개발 동향에 관한 조사연구

신영두,이진구 동국대학교 산업기술환경대학원 1994 산업기술논총 Vol.2 No.-

This paper describes investigation and analysis of Si wafer find-line processes from 1960's up to present based on U.S. Patent No. 4,941,941 entitled " METHOD OF ANISOTROPICALLY ETCHING SILICON WAFERS AND WAFER ETCHING SOLUTION". This study is intended to classify techniques on wet etchants from chemicals mainly used in the reference above and 9 patents, and also includes reviews on both physical and chemical features of wet etching and, further more, comparative explanation of wet and dry etching. The characteristics of low temperature and low speed, of the wet etching processes and some limitations of the informations, given in U.S. Patent No. 4,941,941 and 9 patents, are mainly investigated and analysed, and, then, the dry etching processes are simply discussed as a substitution for the fin-line Si processes. And, finally, future possible development of other kinds of chemical etchants is suggested.

AlN 단결정의 품질평가를 위한 molten KOH/NaOH eutectic alloy의 화학적 습식에칭

박철우,박재화,홍윤표,오동근,최봉근,이성국,심광보,Park, Cheol Woo,Park, Jae Hwa,Hong, Yoon Pyo,Oh, Dong Keun,Choi, Bong Geun,Lee, Seong Kuk,Shim, Kwang Bo 한국결정성장학회 2014 한국결정성장학회지 Vol.24 No.6

본 연구에서는 상용화되는 AlN 웨이퍼(wafer)를 이용하여 molten KOH/NaOH 화학적 습식 에칭(Wet Chemical Etching)에 따른 표면변화 특성 및 최적의 에칭 조건을 조사하였다. AlN 웨이퍼를 $350^{\circ}C$에서 5분간 에칭 시 Al-face, N-face는 서로 다른 관찰되었다. 특히, Al-face는 에치핏의 형상을 파악하여 결함특성을 관찰하였고, 이로부터 결함 밀도를 계산하여 $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$의 결과를 얻었다. N-face의 경우 육각 뿔(hexagonal pyramids) 형태의 격자결함이 형성되었다. 또한 AlN 웨이퍼의 성장 시 배향을 관찰하기 위해 XRD(X-Ray Diffraction, Rigaku, JAPAN)를 이용하여 분석한 결과 육방정 AlN의 C축 방향에 해당되는 (0002) 및 (0004) 면으로 배향된 상태임을 알 수 있었고, DC-XRD(Double Crystal X-ray Diffraction, bruker, Germany)를 이용하여 rocking curve의 위치에 따라 곡률 반경을 측정했을 때 1.6~17 m의 곡률을 가지고 있는 것으로 나타났다. We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

자성 박막의 습식 식각 특성

변요한,정지원 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.2

The wet etching characteristics of magnetic materials such as NiFe and CoFe were investigated in terms of etch rate and etch profile by using variouus etching solutions (etchants). Among the various etching solutions, HNO$_3$, HCl, and H$_2$SO$_4$were selected for the etching of magnetic materials and showed distinct results. In the case of NiFe films, faster etch rate were obtained with HNO$_3$solution. When NiFe films ere etched with HCl solution, white etch residues were found on the surface of etched films. From FEAES analysis of these etch residues, they were proved to be by-product from the reaction of NiFe with Cl element. CoFe thin films showed the similar trend to the case of NiFe films. They were etched fast in HNO$_3$ solution while Chl solution represented slow etching. The etch profiles of CoFe films showed smooth etch profile but revealed the partial etching around the patterns in HNO$_3$solution of relatively high concentration. It was observed that the etched surface was clean and smooth, and that white etch residues were also remained on the etched films.

기판의 왕복 운동을 이용한 인라인 식각세정장치 내 ITO 식각특성

홍성재,권상직,조의식,Hong, Sung-Jae,Kwon, Sang-Jik,Cho, Eou-Sik 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8

An in-line wet etch/cleaning system was established for the research and development in wet etch process. The system was equipped with a reverse moving system for the reduction in the size of the in-line wet etch/cleaning system and it was possible for the glass substrate to be moved back and forth and alternated in a wet etch bath. For the comparison of the effect of the normal motion and that of the alternating motion on the in-line wet etch process, indium tin oxide(ITO) pattern was obtained through both wet etch process conditions. The results showed that the alternating motion is not inferior to the normal motion in etch rate and in etch uniformity. It is concluded that the alternating motion is possible to be applied to the in-line etch process.

반송제어모드를 이용한 인라인 식각/세정장치의 ITO 전극형성기술

홍성재(Sung Jae Hong),임승혁(Seoung Hyeok Im),한형석(Hyung Seok Han),권상직(Sang Jik Kwon),조의식(Eou Sik Cho) 제어로봇시스템학회 2008 제어·로봇·시스템학회 논문지 Vol.14 No.4

An in-line wet etch/cleaning system was established for the research and development in wet etch process as a formation of electrode such as metal or transparent conductive oxide layer. A reverse moving system was equipped in the in-line wet etch/cleaning system for the alternating motion of glass substrate in a wet etch bath of the system. Therefore, it was possible for the glass substrate to be moved back and forth and it was possible to reduce the size of the system by using the reversing moving system. For the effect of the alternating motion of substrate on the etch rate in the in-line wet etch bath, indium tin oxide(ITO) patterns were obtained through wet etch process in the in-line system in which the substrate was moved back and forth. From the CD(critical dimension) skews resulted from the ADI CD and ACI CD of the ITO patterns, it was concluded that the alternating motion of glass substrate are possible to be applied to the mass production of wet etch process.

ZnO와 Al-doped ZnO 박막의 표면 형상과 전기·광학적 특성에 미치는 Wet Etching 시간의 영향

김민성,Kim, Min-Sung 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.3

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.