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콜로이달 실리카 입자 형상에 따른 CMP 특성에 관한 연구
김문성(Moonsung Kim),정해도(Haedo Jeong) 대한기계학회 2014 大韓機械學會論文集A Vol.38 No.9
반도체 연마용 슬러리를 이온교환법, 가압방법 및 다단계 주입방법으로 제조하여 입자 크기와 형상에 따른 화학적 기계적 연마에 미치는 영향을 연구하였다. 이온교환법을 이용하여 구형의 콜로이달실리카를 크기별로 입자로 제조하였다. 이렇게 제조한 구형의 실리카를 다시 가압방법을 이용해 입자간의 결합을 유도해 비구형의 형상을 가진 콜로이달 실리카를 제조하였고, 이온교환법과 가압방법의 특징을 살려 실리식산을 다단계로 주입하여 입자 표면과 실리식산의 반응으로, 2~3 개의 입자가 결합한 형상의 콜로이달 실리카를 제조하였다. 이렇게 제조한 입자를 CMP 에 적용하여 콜로이달 실리카의 입자 형상에 따른 연마율을 기존의 상용 슬러리와 비교하였다. pH 가 높을수록 연마율은 높아졌고, 입자가 결합한 비구형의 콜로이달 실리카는 가장 높은 연마율과 양호한 비균일도를 나타내었다. Slurry used for polishing semiconductors processed by exchange, pressurization, and multi-step feeding has been studied to investigate the effect of the size and shape of slurry particles on the oxide CMP removal rate. First, spherical silica sol was prepared by the ion exchange method. The spherical silica particle was used as a seed to grow non-spherical silica sol in accordance with the multi-step feeding of silicic acid by the ion exchange and pressurization methods. The oxide removal rate of both non-spherical silica sol and commercially available slurry were compared with increasing average particle size in the oxide CMP. The more alkaline the pH level of the non-spherical silica sol, the higher was the removal rate and non-uniformity.
전도도 변화에 따른 세리아 슬러리 응집 및 거대입자 형성
권도현,박병욱,주경빈,김동원,이형일,이진석,석유민,권헌수,장윤서,배상현,이만희 한국물리학회 2023 새물리 Vol.73 No.11
Particles can aggregate into “large” particles within slurry—a colloidal solution used in chemical mechanical polishing practiced in the semiconductor industry. Because these large particles can result in manufacturing defects, such as microscratches and dishings, it becomes important to understand and manage particle aggregation within the slurry. This study quantitatively explores the effect of electrical conductivity on particle aggregation in ceria slurry. While increasing the conductivity, changes in the zeta potential and pH were found to be negligible, suggesting that the effective surface potential of the particles remains unaltered, while the interaction range is lowered. As a result, the particles become thermodynamically favorable to aggregate and form large particles. This work has industrial implications to regulate the electrical conductivity of ceria, a key factor in semiconductor manufacturing.
Particle Image Velocimetry 기법을 이용한 CMP 공정의 Slurry유동 분석
신상희(Sanghee Shin),김문기(Munki Kim),윤영빈(Youngbin Yoon),고영호(Youngho Koh),홍창기(Changgi Hong) Korean Society for Precision Engineering 2006 한국정밀공학회지 Vol.23 No.5
Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some previous works show that RR is determined by production of pressure and velocity and NU is also largely affected by velocity of flowfield during CMP. This study is about the direct measurement of velocity of slurry during CMP and whole flowfield upon the non-groove pad by Particle Image Velocimetry(PIV). Typical PIV system is modified adequately for inspecting CMP and slurry flowfield is measured by changing both pad rpm and carrier rpm. We performed measurement with giving some variation in the kinds of pad. The results show that the flowfield is majorly determined not by Carrier but by Pad in the case of non-groove pad.
Effects of Temperature on Removal Rate in Cu CMP
In-Ho Park(박인호),Da-Sol Lee(이다솔),Seon-ho Jeong(정선호),Hae-do Jeong(정해도) 한국기계가공학회 2018 한국기계가공학회지 Vol.17 No.6
Chemical mechanical polishing(CMP) realizes a surface planarity through combined mechanical and chemical means. In CMP process, Preston equation is known as one of the most general approximation of the removal rate. Effects of pressure and relative speed on the mechanical property of Cu CMP has been investigated. On the other hand, The amount of abrasion also increased with changes in pressure and speed, resulting in a proportional increase of temperature during CMP. Especially this temperature is an important factor to change chemical reaction in a Cu CMP. However, when the slurry temperature became higher than 70°C, the removal rate went lower due to abrasives aggregation and scratching occurred on the Cu film. Therefore, it was found that the slurry temperature should not exceed 70°C during Cu CMP. Finally, authors could increase the pressure, speed and slurry temperature up to a ceratin level to improve the removal rate without surface defects.