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Polyimide/polyvinyl alcohol bilayer gate insulator for low-voltage organic thin-film transistors
Yoo, Sungmi,Kim, Yun Ho,Ka, Jae-Won,Kim, Yong Seok,Yi, Mi Hye,Jang, Kwang-Suk Elsevier 2015 ORGANIC ELECTRONICS Vol.23 No.-
<P><B>Abstract</B></P> <P>In this paper, we report the fabrication of a polyimide/polyvinyl alcohol (PVA) bilayer gate insulator for low-voltage organic thin-film transistors (TFTs). The introduction of a PVA layer to form a bilayer structure improves the dielectric and insulating properties of the gate insulator. Organic TFTs with 150nm-thick polyimide and PVA gate insulators were inactive at low operation voltages below 5V. Conversely, organic TFTs with 150nm-thick polyimide/PVA bilayer gate insulators exhibited excellent device performances. Our results suggest that the introduction of a PVA layer with a high dielectric constant could be a simple and efficient way to improve the device performance of low-voltage organic TFTs.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We report the polyimide/PVA bilayer gate insulator for low-voltage organic TFTs. </LI> <LI> Introduction of the PVA layer for forming the bilayer structure improves dielectric and insulating properties of the gate insulator. </LI> <LI> Pentacene and C<SUB>8</SUB>-BTBT TFTs with the 150nm-thick bilayer gate insulators exhibited excellent device performance. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Won, J.M.,Suk, H.J.,Wee, D.,Kim, Y.H.,Ka, J.W.,Kim, J.,Ahn, T.,Yi, M.H.,Jang, K.S. Elsevier Science 2013 Organic electronics Vol.14 No.7
Surface properties of gate insulators strongly affect the device performance of organic thin-film transistors (OTFTs). To improve the performance of OTFTs, we have developed photo-sensitive polyimide gate insulator with fluorine groups. The polyimide gate insulator film could be easily patterned by selective UV exposure without any photoinitiator. The polyimide gate insulator film, fabricated at 130<SUP>o</SUP>C, has a dielectric constant of 2.8 at 10kHz, and leakage current density of <1.6x10<SUP>-10</SUP>A/cm<SUP>2</SUP> while biased from 0 to 90V. To investigate the potential of the polyimide with fluorine groups as a gate insulator, we fabricated C<SUB>10</SUB>-BTBT TFTs. The field-effect mobility and the on/off current ratio of the TFTs were measured to be 0.76+/-0.09cm<SUP>2</SUP>/Vs and >10<SUP>6</SUP>, respectively.
Kim, Sohee,Kim, Aryeon,Jang, Kwang-Suk,Yoo, Sungmi,Ka, Jae-Won,Kim, Jinsoo,Yi, Mi Hye,Won, Jong Chan,Hong, Sung-Kwon,Kim, Yun Ho Elsevier 2016 Synthetic metals Vol.220 No.-
<P><B>Abstract</B></P> <P>The electrical performance of organic field-effect transistors (OFETs) depends on the quality of thin-film organic semiconductors, which is significantly affected by solution-processing conditions and additional processes. We investigated the effects of post-thermal annealing on the thin-film morphologies of liquid crystalline organic semiconductors on polyimide gate insulator surface and the FET performances of the films. The active material selected for the OFETs was 2-decyl-7-phenyl-[1]benzothieno[3,2<I>-b</I>][1]benzothiophene (Ph-BTBT-C<SUB>10</SUB>), which shows a highly ordered smectic E (SmE) mesophase and polycrystalline thin films feature very high mobility. We aimed to produce well defined molecular orientation and crystal structure in thin-film Ph-BTBT-C<SUB>10</SUB> on polyimide gate insulator not typical SiO<SUB>2</SUB> gate insulator via thermal annealing process. Uniform bilayer- or monolayer-structured polycrystalline thin films were obtained on polymer gate insulator after thermal annealing at a SmE (over 148°C) and SmA (over 213°C) liquid crystalline phase temperature, respectively. The OFET using bilayer-structured thin film showed high performance with a mobility of 2.27cm<SUP>2</SUP>/Vs.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The thermal annealing of liquid crystalline OSC affects the performance of OFET. </LI> <LI> The thin-film morphology of OSC was changed during thermal annealing. </LI> <LI> Uniform bilayer-structured polycrystalline thin films were obtained after thermal annealing. </LI> <LI> A highly ordered smectic mesophase and polycrystalline thin films feature high mobility. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>The effect of thermal annealing of liquid crystalline organic semi-conductor on the thin film morphology and its electrical performance of OFETs.</P> <P>[DISPLAY OMISSION]</P>
이동욱,Seon Pil Kim,Tae Hee Lee,김은규,Hyun-Mo Koo,조원주,김영호 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Nano- oating gate memory (NFGM) devices with ZnO nano-particles embedded in polyimide insulators were fabricated. The ZnO nano-particles were created by chemical reactions between polyamic acid and a zinc thin film. The size and the density of the ZnO nano-particles were about 10 nm and 2 × 1011 cm-2, respectively. The threshold voltage shift (△VTr) of the NFGM with ZnO nano-particles was about 2.35 V at the initial stage of the programming and the erasing operations. The subthreshold characteristics and the output current characteristics show that the NFGM with ZnO nano-particles embedded in polyimide has possibility for high-performance non- volatile memory device applications.