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V. Janardhanam,I. Jyothi,Shim-Hoon Yuk,Kyu-Hwan Shim,Kee Young Lim,Chel-Jong Choi,Sung-Nam Lee 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.73 No.5
The current transport mechanism in permalloy/n-type Ge Schottky diodes was studied over the temperature range from 200 to 400 K. At temperatures above 250 K, the forward current-voltage (I-V ) characteristics of the diode were ideal and obeyed the thermionic emission theory. Below 250 K, however, the recombination process was found to contribute to current transport. Similarly, in reverse bias, the thermionic emission mechanism appeared to dominate current transport at tem- peratures above 250 K, and the carrier generation mechanism dominated the reverse current below 250 K. A temperature-driven change in the current conduction mechanism from conduction domi- nated by low-barrier-height patches to conduction dominated by high-barrier-height regions suggests inhomogeneity in the Schottky barrier height. The barrier height inhomogeneity led to deviations in the Richardson constant from its theoretical value at lower temperatures. The room-temperature low-frequency noise measurements taken at different forward biases for the permalloy/n-type Ge Schottky diodes showed a 1=f dependence with a tight variation of between 1.20 and 1.31. The current dependence of the noise power spectral density exhibited a 1=f noise behavior, indicating the operation of the permalloy/n-type Ge Schottky diodes in the thermionic emission mode.
Khurelbaatar, Z.,Kil, Y.H.,Shim, K.H.,Cho, H.,Kim, M.J.,Lee, S.N.,Jeong, J.c.,Hong, H.,Choi, C.J. Academic Press 2016 Superlattices and microstructures Vol.91 No.-
<P>We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (Phi(B)), ideality factor (n), and series resistance (R-s), were extracted using the forward I-V and Cheung's methods. The Phi(B) and n extracted from the forward In(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the Phi(B) and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of Phi(B) calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f(gamma) frequency dependence, with gamma ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current. (C) 2016 Elsevier Ltd. All rights reserved.</P>
Nagyong Choi,Ho-Jung Kang,Jong-Ho Lee 대한전자공학회 2019 Journal of semiconductor technology and science Vol.19 No.2
The random telegraph noise (RTN) properties in two different cell states in 3-D NAND flash memory with a tube-type poly-Si body are analyzed. We analyze the fluctuation in bit-line current (ΔIBL) with increasing IBL and the low frequency noise characteristics in the erase (ERS) and the program (PGM) cell states. It is found that the IBL fluctuation by the RTN is more influenced in the ERS state than that in the PGM state at low IBL condition. Simulated electron concentration in channel at low IBL of the cell in PGM state shows that electrons are distributed below the interface between tunneling oxide and poly-Si body due to the repulsive force between electrons in channel and the nitride storage layer. Since the channel of the cell in the PGM state is located relatively distant from the trap causing the RTN, noise power spectral density in low IBL of the PGM state is smaller than that of the ERS state.