<P>We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky...
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https://www.riss.kr/link?id=A107657711
Khurelbaatar, Z. ; Kil, Y.H. ; Shim, K.H. ; Cho, H. ; Kim, M.J. ; Lee, S.N. ; Jeong, J.c. ; Hong, H. ; Choi, C.J.
2016
-
SCI,SCIE,SCOPUS
학술저널
306-312(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky...
<P>We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (Phi(B)), ideality factor (n), and series resistance (R-s), were extracted using the forward I-V and Cheung's methods. The Phi(B) and n extracted from the forward In(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the Phi(B) and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of Phi(B) calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f(gamma) frequency dependence, with gamma ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current. (C) 2016 Elsevier Ltd. All rights reserved.</P>