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Effect of Sintering Temperature on the Micro Strain and Magnetic Properties of Ni-Zn Nanoferrites
D. Venkatesh,M. Siva Ram Prasad,B. Rajesh Babu,K. V. Ramesh,K. Trinath 한국자기학회 2015 Journal of Magnetics Vol.20 No.3
In this study, nanocrystalline ferrite powders with the composition Ni0.5Zn0.5Fe₂O₄ were prepared by the autocombustion method. The obtained powders were sintered at 800℃, 900℃ and 1,000℃ for 4 h in air atmosphere. The as-prepared and the sintered powders were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, and magnetization studies. An increase in the crystallite size and a slight decrease in the lattice constant with sintering temperature were observed, whereas microstrain was observed to be negative for all the samples. Two significant absorption bands in the wave number range of the 400 cm<SUP>?1</SUP> to 600 cm<SUP>?1</SUP> have been observed in the FT-IR spectra for all samples which is the distinctive feature of the spinel ferrites. The force constants were found to vary with sintering temperature, suggesting a cation redistribution and modification in the unit cell of the spinel. The M-H loops indicate smaller coercivity, which is the typical nature of the soft ferrites. The observed variation in the saturation magnetization and coercivity with sintering temperature has been attributed to the role of surface, inhomogeneous cation distribution, and increase in the crystallite size.
G. Lakshmi Vara Prasad,Venkatagurunatham Naidu Kollu,M. Sailaja,S. Radhakrishnan,K. Jagan Mohan,A. Kishore Reddy,G. Rajesh Chandra 한국전기전자재료학회 2024 Transactions on Electrical and Electronic Material Vol.25 No.1
In this paper, we delve into the intriguing realm of Pseudo-morphic High Electron Mobility Transistors (pHEMTs) composed of InAs∕In0.3Al0.7As∕InSb∕In0.3Al0.7As layers, utilizing Silvaco-TCAD for simulation. Our focus centers on the assessment of RF and analog electrical characteristics, with a keen eye on the high-temperature eff ects. The influence of temperature on device performance is meticulously evaluated in comparison to a reference device operating at room temperature. Traditionally, the critical parameters such as threshold voltage ( Vth ), transconductance ( gm ), and Ion∕Ioff ratio have been calculated within the temperature range spanning from 300 K to 700 K. The primary pHEMT device in our study exhibits impressive attributes, featuring a drain current of 950 mA, a threshold voltage of -1.75 V, a high transconductance ( gm ) value of 650 mS/mm, an Ion∕Ioff ratio of 1 × 106 , a transition frequency ( ft ) soaring to 790 GHz, and a maximum frequency ( fmax ) reaching a staggering 1.4 THz. However, as we traverse the temperature spectrum, our findings unveil a compelling narrative. The impact of rising temperature is unequivocal, triggering a cascade of transformations within the device. Notably, as the temperature escalates, we observe a noticeable decrease in current, a reduction in transconductance ( gm ), and a diminishing Ion∕Ioff ratio. To unravel the intricacies of these temperature-induced effects, we introduce the infusion of Machine Learning (ML) into our analysis.
M. V. Ganeswara Rao,N. Ramanjaneyulu,Balamurali Pydi,Umamaheshwar Soma,K. Rajesh Babu,Satti Harichandra Prasad 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.6
The rapid advancement in nanoscale devices demands innovative gate dielectric materials to replace traditional Silicon dioxide. This paper investigates the electrical behavior and performance of a dual-gate FinFET employing different high-K gate dielectric materials (Silicon dioxide, Hafnium oxide, Titanium oxide) through ATLAS 2D simulation in 5 nm technology. We analyze how these high-K gate dielectric materials influence the device, focusing on performance enhancement. The study highlights various key performance parameters (ION, IOFF, gm, gds, RON, TF, EV, V IL, V IH, NML, NMH) and reveals a significant performance improvement with HfO2 dielectric material in the proposed Dual-Gate FinFET. Achieving impressive performance parameters ( ION : 21.59 mA, IOFF : 21 µA, Maximum net Electric field: 1221290 V/cm, g m(max) : 0.05187 S, gds(max) : 0.03462 S, RON(max) : 25.93 kΩ , TFmax: 5.02, G ainmax : 90.233, EVmax : 67.532 V, V IL : 0.21 V, V IH : 0.4 V, NML : 198 V, NMH : 600 V), this paper provides valuable insights for designing high-performance devices with HfO2 dielectric material.
M. V. Ganeswara Rao,N. Ramanjaneyulu,Sumalatha Madugula,N. P. Dharani,K. Rajesh Babu,Kallepelli Sagar 한국전기전자재료학회 2024 Transactions on Electrical and Electronic Material Vol.25 No.2
In this article, we delve into the reliability of various oxide/4H-SiC interfaces when exposed to elevated temperatures and carrier-trapping conditions. Our investigation primarily centers around the impact of diff erent gate dielectric materials on the electrical characteristics of a low breakdown 4H-SiC-based MOSFET. The gate dielectrics under scrutiny include SiO2, Si3N4, AlN, Al2O3, Y2O3, and HfO2. We fi nd that the choice of gate oxide material signifi cantly infl uences the transistor’s performance, with gate oxides possessing higher relative permittivity notably enhancing its characteristics. Among the materials studied, HfO2 emerges as the most promising candidate, demonstrating superior immunity behaviors in the MOSFET. However, the use of HfO2 is associated with increased gate leakage current. To mitigate this drawback, we introduce a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. Interestingly, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, prove effective in preserving the transistor’s on-state performance metrics while limiting gate leakage current across the entire range of gate voltages examined. To validate the predictive capabilities of our modeling analysis, we compare our simulation results with experimental data from the literature, and we observe a favorable agreement. This research holds particular signifi cance in applications employing low-power MOSFETs, where reliability and durability are as critical as performance. For instance, in the context of power optimizers for photovoltaic modules, which fall under the category of low-load and low-voltage DC–DC converters, these devices play a pivotal role in enhancing energy generationunder challenging environmental conditions while ensuring long-term reliability.
Functionalized Multilayered Graphene Platform for Urea Sensor
Srivastava, Rajesh K.,Srivastava, Saurabh,Narayanan, Tharangattu N.,Mahlotra, Bansi D.,Vajtai, Robert,Ajayan, Pulickel M.,Srivastava, Anchal American Chemical Society 2012 ACS NANO Vol.6 No.1
<P>Multilayered graphene (MLG) is an interesting material for electrochemical sensing and biosensing because of its very large 2D electrical conductivity and large surface area. We propose a less toxic, reproducible, and easy method for producing functionalized multilayer graphene from multiwalled carbon nanotubes (MWCNTs) in mass scale using only concentrated H<SUB>2</SUB>SO<SUB>4</SUB>/HNO<SUB>3</SUB>. Electron microscopy results show the MLG formation, whereas FTIR and XPS data suggest its carboxylic and hydroxyl-functionalized nature. We utilize this functionalized MLG for the fabrication of a novel amperometric urea biosensor. This biosensor shows linearity of 10–100 mg dL<SUP>–1</SUP>, sensitivity of 5.43 μA mg<SUP>–1</SUP> dL cm<SUP>–2</SUP>, lower detection limit of 3.9 mg dL<SUP>–1</SUP>, and response time of 10 s. Our results suggest that MLG is a promising material for electrochemical biosensing applications.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2012/ancac3.2012.6.issue-1/nn203210s/production/images/medium/nn-2011-03210s_0010.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn203210s'>ACS Electronic Supporting Info</A></P>
Niraj A. Shah,Laxit K. Bhatt,Rajesh J. Patel,Tushar M. Patel,Nayankumar V. Patel,Harshida G. Trivedi,Nilam R. Patel,Jitendra H. Patel,Satish D. Patel,Rajesh S. Sundar,Mukul R. Jain 한국실험동물학회 2022 Laboratory Animal Research Vol.38 No.4
Background: Nonhuman primates are used for research purposes such as studying diseases and drug discovery and development programs. Various clinical pathology parameters are used as biomarkers of disease conditions in biomedical research. Detailed reports of these parameters are not available for Indian-origin rhesus macaques. To meet the increasing need for information, we conducted this study on 121 adult Indian rhesus macaques (57 wild-sourced and 64 inhouse animals, aged 3–7 years). A total of 18 hematology and 18 biochemistry parameters were evaluated and reported in this study. Data from these parameters were statistically evaluated for significance amongst inhouse and wild-born animals and for differences amongst sexes. The reference range was calculated according to C28-A3 guidelines for reporting reference intervals of clinical laboratory parameters. Results: Source of the animals and sex appeared to have statistically significant effects on reference values and range. Wild-born animals reported higher WBC, platelets, neutrophils, RBC, hemoglobin, HCT, MCV, and total protein values in comparison to inhouse monkeys. Sex-based differences were observed for parameters such as RBCs, hemoglobin, HCT, creatinine, calcium, phosphorus, albumin, and total protein amongst others. Conclusions: Through this study, we have established a comprehensive data set of reference values and intervals for certain hematological and biochemical parameters which will help researchers in planning, conducting, and interpreting various aspects of biomedical research employing Indian-origin rhesus monkeys.
Arvind Kumar,Antony Ginny,Rajesh M.K.,Josephrajkumar A.,Grace Tony 한국응용곤충학회 2023 Journal of Asia-Pacific Entomology Vol.26 No.2
Oryctes rhinoceros L. (Coleoptera: Scarabaeidae), the coconut rhinoceros beetle (CRB), is a primary pest of co conut in South and Southeast Asia and the Pacific Islands. The beetle has the potential to severely affect the economies of local communities, many of whom are marginal and small farmers who rely on coconut as the main source of livelihood. Reverse transcription-quantitative real-time PCR (qRT-PCR) based targeted gene expression analysis has emerged as a powerful tool due to its sensitivity and reproducibility. However, calculating the relative expression of target genes requires normalization with reference genes across specific experimental conditions. To identify suitable reference gene(s) possessing stability, we selected six prospective genes (viz., NADH, ACTIN, EF1A, RPL3, SDHA, and ARF6) and evaluated them for their potential use as reference gene(s) across different developmental stages of O. rhinoceros. A comprehensive approach based on five statistical models viz., GeNorm, BestKeeper, NormFinder, RefFinder and the ΔCt value, was utilized, and based on the obtained stability values of candidate genes, a consensus ranking was generated. The expression levels of NADH, EF1A and RPL3 were observed to be the most stable across the developmental stages with significant statistical reliability. Further, this study identified NADH/EF1A as the most reliable reference gene combination which could provide robust normalization of RT-qPCR data in gene expression studies in O. rhinoceros. This is the first report iden tifying the suitable reference genes for normalizing gene expression in O. rhinoceros across different develop mental stages, facilitating future elucidation of gene expressions in this species.
Haldar, Avijit,Pal, Prasenjit,Rajesh, M. Datta,Pal, Saumen K.,Majumdar, Debasis,Biswas, Chanchal K.,Pan, Subhransu Asian Australasian Association of Animal Productio 2014 Animal Bioscience Vol.27 No.5
Data on age and body weight at breeding, parity, previous litter size, days open and some descriptive body linear traits from 389 meat-type, prolific Black Bengal goats in Tripura State of India, were collected for 3 and 1/2 years (2007 to 2010) and analyzed using logistic regression model. The objectives of the study were i) to evaluate the effect of age and body weight at breeding, parity, previous litter size and days open on litter size of does; and ii) to investigate if body linear type traits influenced litter size in meat-type, prolific goats. The incidence of 68.39% multiple births with a prolificacy rate of 175.07% was recorded. Higher age (>2.69 year), higher parity order (>2.31), more body weight at breeding (>20.5 kg) and larger previous litter size (>1.65) showed an increase likelihood of multiple litter size when compared to single litter size. There was a strong, positive relationship between litter size and various body linear type traits like neck length (>22.78 cm), body length (>54.86 cm), withers height (>48.85 cm), croup height (>50.67 cm), distance between tuber coxae bones (>11.38 cm) and distance between tuber ischii bones (>4.56 cm) for discriminating the goats bearing multiple fetuses from those bearing a single fetus.