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텅스텐 CMP에서 디싱 및 에로젼 결함 감소에 관한 연구
박범영(Boumyoung Park),김호윤(Hoyoun Kim),김구연(Gooyoun Kim),김형재(Hyoungjae Kim),정해도(Haedo Jeong) Korean Society for Precision Engineering 2005 한국정밀공학회지 Vol.22 No.2
Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures n semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion md corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested o reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.
박범영(Boumyoung Park),김호윤(Hoyoun Kim),김형재(Hyungjae Kim),김구연(Gooyoun Kim),정해도(Haedo Jeong) Korean Society for Precision Engineering 2004 한국정밀공학회지 Vol.21 No.7
As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.
Self-Conditioning을 이용한 고정입자패드의 텅스텐 CMP
박범영(Boumyoung Park),김호윤(Hoyoun Kim),서헌덕(Heondeok Seo),정해도(Haedo Jeong) 대한기계학회 2003 대한기계학회 춘추학술대회 Vol.2003 No.4
The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer<br/> and metal line in the semiconductor device. The conditioning of polishing pad in CMP process<br/> additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer<br/> non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has<br/> the swelling characteristic by water owns the self-conditioning advantage as compared with the general<br/> CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects<br/> such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing<br/> technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the<br/> removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary<br/> with the pad life-time.
마이크로 구조를 가진 패드를 이용한 MEMS CMP 적용에 관한 연구
박성민(Sungmin Park),정석훈(Sukhoon Jeong),정문기(Moon ki Jeong),박범영(Boumyoung Park),정해도(Heado Jeong) 한국정밀공학회 2006 한국정밀공학회 학술발표대회 논문집 Vol.2006 No.5월
Chemical-mechanical polishing, the dominant technology for LSI planarization, is trending to play an important function in micro-electro mechanical systems (MEMS). However, MEMS CMP process has a couple of different characteristics in comparison to LSI device CMP since the feature size of MEMS is bigger than that of LSI devices. Preliminary CMP tests are performed to understand material removal rate (MRR) with blanket wafer under a couple of polishing pressure and velocity. Based on the blanket CMP data, this paper focuses on the consumable approach to enhance MEMS CMP by the adjustment of slurry and pad. As a mechanical tool, newly developed microstructured (MS) pad is applied to compare with conventional pad (IC1400-k, Nitta-Haas), which is fabricated by micro molding method of polyurethane. To understand the CMP characteristics in real time, in-situ friction force monitoring system was used. Finally, the topography change of poly-si MEMS structures is compared according to the pattern density, size and shape as polishing time goes on.
정석훈,서헌덕,박범영,박재홍,박성민,정문기,정해도,김형재,Jeong, Sukhoon,Seo, Heondeok,Park, Boumyoung,Park, Jaehong,Park, Seungmin,Jeong, Moonki,Jeong, Haedo,Kim, Hyoungjae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
This study introduces Electro-chemical Mechanical Deposition(ECMD) lot making Cu interconnect. ECMD is a novel technique that has ability to deposit planar conductive films on non-planar substrate surfaces. Technique involves electrochemical deposition(ECD) and mechanical sweeping of the substrate surface Preferential deposition into the cavities on the substrate surface nay be achieved through two difference mechanisms. The first mechanism is more chemical and essential. It involves enhancing deposition into the cavities where mechanical sweeping does not reach. The second mechanism involves reducing deposition onto surface that is swept. In this study, we demonstrate ECMD process and characteristic. We proceeded this experiment by changing of distribution of current density on divided water area zones and use different pad types.
The effect of mixed abrasive slurry on CMP of 6H-SiC substrates
Hojun Lee,Boumyoung Park,Sukhoon Jeong,Sukbae Joo,정해도 한양대학교 세라믹연구소 2009 Journal of Ceramic Processing Research Vol.10 No.3
Silicon Carbide (SiC) is a wide band gap semiconductor, being developed for high temperature, high power, and high frequency device applications. Many researchers have studied SiC polishing for the manufacturing of SiC and semiconductor substrates. However, these researchers have faced difficulties with a wafer preparation prior to epitaxial growth due to its hardness and remarkable chemical stability. A smooth and defect-free substrate surface is important to obtain good epitaxial layers. Therefore, a hybrid process, chemical mechanical polishing (CMP) has been proposed as a solution for preparing an epi-ready surface. During the experiments, the material removal rate (MRR) was investigated to learn how long the CMP process continues to remove a damaged layer by mechanical polishing using 100 nm diamond. Furthermore, the dependency of mechanical factors, such as pressure, velocity, and abrasive concentration, were researched using a single abrasive slurry (SAS). The experiments especially focused on the epi-ready surface with a mixed abrasive slurry (MAS). The addition of nanometre sized diamond in the MAS provided a strong synergy between mechanical and chemical effects. Through the experiments, a chemical effect (KOH based) was essential, and the atomic-bit mechanical removal was found to be efficient to remove residual scratches from on MAS. In conclusion, the SiC CMP mechanism was quite different from that of relatively softer materials to gain both high quality surfaces and a high MRR. Silicon Carbide (SiC) is a wide band gap semiconductor, being developed for high temperature, high power, and high frequency device applications. Many researchers have studied SiC polishing for the manufacturing of SiC and semiconductor substrates. However, these researchers have faced difficulties with a wafer preparation prior to epitaxial growth due to its hardness and remarkable chemical stability. A smooth and defect-free substrate surface is important to obtain good epitaxial layers. Therefore, a hybrid process, chemical mechanical polishing (CMP) has been proposed as a solution for preparing an epi-ready surface. During the experiments, the material removal rate (MRR) was investigated to learn how long the CMP process continues to remove a damaged layer by mechanical polishing using 100 nm diamond. Furthermore, the dependency of mechanical factors, such as pressure, velocity, and abrasive concentration, were researched using a single abrasive slurry (SAS). The experiments especially focused on the epi-ready surface with a mixed abrasive slurry (MAS). The addition of nanometre sized diamond in the MAS provided a strong synergy between mechanical and chemical effects. Through the experiments, a chemical effect (KOH based) was essential, and the atomic-bit mechanical removal was found to be efficient to remove residual scratches from on MAS. In conclusion, the SiC CMP mechanism was quite different from that of relatively softer materials to gain both high quality surfaces and a high MRR.