Expression levels of three bacterial blight resistance genes against K3a race of Korea by molecular and phenotype analysis in japonica rice (O. sativa L.)

Jung-Pil Suh,Tae-Hwan Noh,Ki-Young Kim,Jeong-Ju Kim,Yeon-Gyu Kim,Kshirod K. Jena 한국작물학회 2009 Journal of crop science and biotechnology Vol.12 No.3

Bacterial blight, caused by Xanthomonas oryzae pv. oryzae (Xoo) is a destructive disease of rice in the major rice growing countries of Asia. In 2003, a serious bacterial blight epidemic occurred in the southwestern coastal areas in Korea, causing significant yield loss due to the emergence of a new race, K3a. IR24 near-isogenic lines containing Xa4, xa5, Xa7 and Xa21 genes conferred different degrees of resistance to the most virulent K3a isolate, HB01009 in an inoculation experiment in the greenhouse. Expression levels of the resistance genes, Xa4, xa5 and Xa21 were studied in two F2 populations derived from the crosses between elite japonica cultivars and an advanced backcross breeding line possessing Xa4, xa5 and Xa21 genes. F2 progenies segregated for K3a resistance (R) and susceptible (S) phenotypes in a ratio of 3(R):1(S) indicated that K3a resistance was controlled by a major dominant gene. Three PCR markers tightly linked to the resistance genes Xa4, xa5 and Xa21 confirmed the presence of the genes and their interaction with each gene. This study demonstrated that the Xa21 gene dominantly contributed to K3a resistance. However, the Xa4 gene also contributed to the full expression of resistance. The level of expression of strong resistance to K3a race was attributed to the presence of Xa21 and Xa4 genes irrespective of the presence of xa5 gene. Our results suggest that the R-gene combinations of Xa4+Xa21 could be a useful and effective strategy toward improving resistance to K3a race of Korean japonica cultivars. Bacterial blight, caused by Xanthomonas oryzae pv. oryzae (Xoo) is a destructive disease of rice in the major rice growing countries of Asia. In 2003, a serious bacterial blight epidemic occurred in the southwestern coastal areas in Korea, causing significant yield loss due to the emergence of a new race, K3a. IR24 near-isogenic lines containing Xa4, xa5, Xa7 and Xa21 genes conferred different degrees of resistance to the most virulent K3a isolate, HB01009 in an inoculation experiment in the greenhouse. Expression levels of the resistance genes, Xa4, xa5 and Xa21 were studied in two F2 populations derived from the crosses between elite japonica cultivars and an advanced backcross breeding line possessing Xa4, xa5 and Xa21 genes. F2 progenies segregated for K3a resistance (R) and susceptible (S) phenotypes in a ratio of 3(R):1(S) indicated that K3a resistance was controlled by a major dominant gene. Three PCR markers tightly linked to the resistance genes Xa4, xa5 and Xa21 confirmed the presence of the genes and their interaction with each gene. This study demonstrated that the Xa21 gene dominantly contributed to K3a resistance. However, the Xa4 gene also contributed to the full expression of resistance. The level of expression of strong resistance to K3a race was attributed to the presence of Xa21 and Xa4 genes irrespective of the presence of xa5 gene. Our results suggest that the R-gene combinations of Xa4+Xa21 could be a useful and effective strategy toward improving resistance to K3a race of Korean japonica cultivars.

희토류 금속을 첨가한 적철광의 자기상 전이

한경훈,신경호,김정기,정재윤 漢陽大學校 自然科學硏究所 2000 自然科學論文集 Vol.19 No.-

다결정시료(Fe₂O₃)1-x(Eu₂O₃)x (x=0.04와 0.06)계의 자기상 전이를 연구하기 위해 상온에서의 X선 회절, 액체질소온도에서 상온에 이르는 온도구간에서의 Mossbauer 분광과 약 8K에서 300K의 온도구간에서의 자기능률 측정방법을 사용하였다. X선 회절은 본 연구의 다결정시료가 a-Fe₂O₃와 동일한 rhombohedral결정구조를 가짐을 보인다. X선 회절선의 결과를 이용하여 비선형최소자승법을 써서 각 시료의 격자상수값을 구하였다. Mossbauer 분광결과는 자기상 전이가 255K<T<265K 온도 영역에서 일어남을 보인다. 온도영역 T<255K에서의 초미세 자기장의 온도 의존성에 반강자성 spinwave이론이 잘 적용됨을 보인다. 온도에 따른 magnetization의 변화로 자기상전이 온도를 관찰하였으며, 이 결과는 Mossbauer 분광 결과와 잘 일치 하였다. 상온에서의 hysteresis 곡선은 Eu농도가 증가함에 따라서 보자력이 증가하지만 자화와 잔류자화는 감소했음을 알 수 있었다. A study of magnetic transition for the polycrystalline (Fe₂O₃)1-x(Eu₂O₃)x (x=0.04 and 0.06) has been performed by the methods of X-ray diffraction at room temperature, Mossbauer spectroscopy within the temperature range from liquid nitrogen to room temperature, and a measurement of magnetic moment within temperature range of 8K∼300K. X-ray diffraction shows that the samples are in the same rhombohedral crystal structure as that of a-Fe₂O₃. The lattice parameter of the samples has been determined from X-ray diffraction patterns using computer with a progam of nonlinear square-fit. The Mossbauer results tell us that the magnetic transition of the samples occurs in the temperature region of 255K<T<265K. The temperature dependence of magnetic hyperfine field of the samples is in good agreement with a spin-wave theory for a antiferromagnetic phase within the temperature range from liquid nitrogen to 255K. The magnetic phase transition was observed by a temperature dependence of magnetization and the result was in good agreement with that of Mossbauer. Magnetic hysteresis curves indicated that the values of coercivity increase but that of magnetization and remanence of the samples decrease as increasing the concentration of Eu.

Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성

홍광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-

Chemical bath deposition 방법으로 다결정 CdSe 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. 450℃로 열처리한 시료가 X-선 회절무늬로 부터 외삽법에 의해 a_o와 c_o 는 각각 4.302 Å과 7.014 Å인 육방정계임을 알았다. 이 때 낱알크기는 약 0.3㎛이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K 에서 200 K 까지는 압전산란에 의하여, 200 k 에서 293 K 까지는 극성광학산란에 의하여 감소하는 경향이 나타냈다. 광전도 셀의 특성으로 스텍트럼 응답, 감도(γ), 최대허용소비전력 및 응답 시간을 측정하였다. Polycrystalline CdSe thin films were grown on creamic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in N_2 gas at 450℃ it was found hexagonal structure whose lattice parameters a_o and c_o were 4.302 Å and 7.014 Å, respectively. It grain size was about 0.3 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical potical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivily (γ), maximum allowable power dissipation and response time on these samples.

HWE(Hot Wall Epitaxy)에 의한 ZnIn_2S_4 박막 성장과 광전도 특성

홍광준,이관교,정준우,정경아,방진주,장현규,문종대,김혜숙 조선대학교 기초과학연구소 1999 自然科學硏究 Vol.22 No.1

HWE 방법에 의해 ZnIn_2S_4 박막을 Si(00) 기판 위에 성장시켰다. 증발원과 기판의 온도를 각각 610℃, 450℃로 하여 성장시킨 ZnIn_2S_4 박막의 이중 결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)값이 245 arcsec로 가장 작았다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자농도의 1n n 대 1/T에서 구한 활성화에너지는 0.17eV로 측정되었다. Hall 이동도의 온도 의존성은 30K에서 100K까지는 불순물산란에 기인하고, 100K에서 293K까지는 격자산란에 기인한것으로 고찰되었다. 광전도셀의 특성으로 spectral response, 최대 허용소비전력(MAPD), 광전류와 암전류(pc/dc)의 비 및 응답시간을 측정하였다. S 증기분위기에서 열처리한 광전도 셀의 경우, 감도(??)는 0.99, pc/dc은 1.37x10^7, 그리고 최대 허용소비전력(MAPD)은 336mW, 오름시간(rise time)은 9ms, 내림시간(decay time)은 9.8ms로 가장 좋은 광전도 특성을 얻었다. The ZnIn_2S_4 thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are 610℃ and 450℃ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 100K by impurity scattering and decreased in the temperature range 100K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(??), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapor compare with in Zn, In, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.37x10^7, the MAPD of 336mW, and the rise and decay time of 9ms and 9.8ms, respectively.

CBD 방법에 의한 CdS 박막의 성장과 광전도 특성

황광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-

Chemical bath deposition 방법으로 다결정 CdS 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. 550℃로 열처리한 시료의 경우 X-선 회절무늬로 부터 외삽법에 의해 a_。와 c_。는 각각 4.1364 Å과 6.7129 Å인 육방정계임을 알았다. 이 때 낱알크기는 약 0.35㎛이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K 에서 150 K 까지는 압전산란에 의하여, 150 K 에서 293 K 까지는 극성광학산란에 의하여 감소하는 경향이 나타냈다. 광전도 셀의 특성으로 스텍트럼 응답, 감도(γ), 최대허용소비전력 및 응답 시간을 측정하였다. Polycrystalline CdS thin films were grown on creamic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in N_2 gas at 550℃ it was found hexagonal structure whose lattice constants a_o and c_o were 4.1364 Å and 6.7120Å, respectively. Its grain size was about 0.35 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150K and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.

HWE(Hot Wall Epitaxy)에 의한 CuGaSe₂/GaAs epilayer 성장과 광전기적 특성

홍광준,정준우,백형원,정경아,방진주,진윤미,김소형 조선대학교 기초과학연구소 2001 自然科學硏究 Vol.24 No.-

수평 전기로에서 CuGaSe₂ 다결정을 합성하여 HWE(Hot Wall Epitaxy) 방법으로 CuGaSe₂/GaAs epilayer를 반절연성 GaAs(100)기판 위에 성장하였다. CuGaSe₂/GaAs epilayer는 증발원의 온도를 610℃, 기판의 온도를 450℃로 하였다. CuGaSe₂/GaAs epilayer의 결정성의 조사에서 20K에서 광발광(photoluminescence) 스펙트럼이 672.6nm(1.8432eV)에서 엑시톤 방출 스펙트럼이 가장 강하게 나타났으며, 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 138 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 4.87×10^(23) electron/m³, 1.29×10² m²/v-s 였다. CuGaSe₂/GaAs epilayer의 광전류 단파장대 봉우리들로부터 20K에서 측정된 ΔCr(Crystal field splitting)은 약 0.09 eV ΔSo(spin orbit coupling)는 0.2498 eV였다. 20K의 광발광 측정으로부터 고품질의 결정에서 볼 수 있는 자유 엑시톤 (free exciton)과 매우 강한 세기의 중성 받개(acceptor) 구속 엑시톤 (bound exciton)등의 피크가 관찰되었다. 이때 받개 구속 엑시톤 (bound exciton)의 반치폭과 결합에너지는 각각 8meV와 93.2meV 였다. 또한 Haynes rule에 의해 구한 불순물의 활성화 에너지는 466meV였다. The stochiometric mixture of evaporating materials for the CuGaSe₂/GaAs epilayer was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe₂, it was found tetragonal structure whose lattice constant a_(0) and c_(0) were 5.615 Å and 11.025 Å, respectively. To obtain the CuGaSe₂/GaAs epilayer, CuGaSe₂ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 ℃ and 450 ℃ respectively. The crystalline structure of CuGaSe₂/GaAs epilayer was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. From the photocurrent spectra by illumination of polarized light of the CuGaSe₂/GaAs epilaye. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900 eV and 0.2498 eV, respectively. From the photoluminescence measurement of CuGaSe₂/GaAs epilayer, we observed free excition(Ex) observable only in high quality crystal and neutral acceptor-bound exciton (A^(0); X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 93.2 meV, respectively. By Haynes rule, an activation energy of impurity was 466 meV.

신발 갑피 자동 검사를 위한 딥러닝 기반 결함 검출 비전 시스템 설계

강정호(J. H. Kang),정기민(K. M. Jeong),김현희(H. H. Kim),이경창(K. C. Lee) 한국생산제조학회 2022 한국생산제조시스템학회 학술발표대회 논문집 Vol.2022 No.7

광전도체의 CdS 단결정 성장과 물리적 특성

정태수,유평열,신영진,신현길,김택성,정철훈,이훈,신영신,홍광준,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-

승화방법으로 광전도체의 CdS 단결정을 성장하였고 외삽법으로 구한 a_o와 c_o 의 격자상수 값은 각각 4.1318Å과 6.7122Å임을 알았다. Hall 측정값으로 부터 상온에서의 CdS 단결정의 운반자 농도와 이동도는 각각∼10^23m^-3과 2.93×10 exp (-2)㎡/V sec 이였으며 온도에 따른 이동도 변화는 33 K에서 150 K까지는 T^1/2 에 따라 증가하는 경향이 있고 180 K 에서 상온까지는 T^-2에 따라 감소한 경향이 나타났다. 광전류 측정으로 부터 나타난 단파장대의 봉우리는 진성전이에 기인하는 봉우리였으며 이 봉우리의 에너지값은 CdS 광전도체에 에너지 밴드 갭과 동일한 값을 나타냄을 알았다. A CdS single crystal was grown by using sublimation method. Lattice constants, a_o and c_o , obtained by using extrapolation were 4.1318 Å and 6.7122 Å, respectively. The carrier density was∼10^23m^-3 and the mobility was 2.93×10 exp (-2)㎡/V-sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to T^1/2 from 33 K to 150 K and a decreasing tendency in proportion to T^-2 from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.

체재형주말농장의 개발 방향에 관한 연구 전문가 설문조사를 중심으로

최정민,( Mark I. Wilson ),( K. Irene Shim ),( Eun Seong Jeong ) 한국농촌경제연구원 2011 농촌경제 Vol.34 No.1

The purpose of this study is to act as a preliminary inquiry into the development of a Korean Garden Community (K-GC) model as an element of multi- habitation community. The proposed model is based on data collected from thirty-four experts` survey and case studies in both Korea and foreign countries. The main findings are: 1) eclectic model that will be resulted in urban-rural co-development by bridging such values as social welfare of Germany and regional economic development of Japan; 2) Main developers are suggested to be municipal governments or Korea Rural Community Corporation whereas local community organizations and local farm corporations should be a primary operating body; 3) Enacting a special regulation is to be needed to promote and stabilize the K-GC; and 4) Two different types of K-GC are needed to meet the geo-political and economic needs of each community which are called as Suburb and Countryside type of K-GC. The suburb-type of K-GC focuses on social welfare in a scale developed by public sectors, while countryside-types of K-GC emphasize regional revitalization in a medium-size complex led by citizens and groups.

Thermal properties and crystallization kinetics of tellurium oxide based glasses

김현규,E.D. Jeong,J.S. Bae,T.E. Hong,K.T. Lee,류봉기,T. Komatsu 한양대학교 세라믹연구소 2007 Journal of Ceramic Processing Research Vol.8 No.6

The thermal stabilities and formation kinetics of K[Nb1/3Te2/3]2O4.8 phase in K2O-Nb2O5-TeO2 glasses were investigated. The activation energies for crystallization and grain growth of the K[Nb1/3Te2/3]2O4.8 phase from original glasses were determined from the results of XRD and DTA data. Transparent 15K2O-15Nb2O5-70TeO2 glass-ceramics have a cubic structure basically, but the cubic structure is very slightly distorted. The activation energy for grain growth of the K[Nb1/3Te2/3]2O4.8 phase in 15K2O-15Nb2O5-70TeO2 glass was 33.5 kJ/mol. The energy required for the phase transformation from 15K2O-15Nb2O5- 70TeO2 glass to K[Nb1/3Te2/3]2O4.8 was 253.6 kJ/mol. The study on the formation kinetics of transparent glass-ceramics with SHG should have a large impact for the development of nonlinear optical materials.