http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
A.M.Efremov,Dong-PyoKim,Chang-IlKim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.6
In this work, we carried out an investigation of the in uence of the Cl2/CF4 mixing ratio on both the plasma parameters and the volume densities of the neutral and the charged particles in an inductively coupled plasma system. The shift in the gas mixture content from pure Cl2 to CF4 was found to lead decrease in the electron and the ion densities but to an increase in the electron temperature. Although a stepwise dissociation did not contribute to the formation of Cl and F atoms, a change in the gas mixing ratio in uenced electron-impact dissociation and recombination kinetics. As a result, in a Cl2-rich plasma, a non-monotonic behavior of the Cl atom density is possible.
Mechanisms of $Cl_2$ Molecules Dissociation in a Gas Discharge Plasma in Mixtures with Ar, $O_2.N_2$
Efremov, A.M.,Kwon, Kwang-Ho The Institute of Electronics and Information Engin 2001 Journal of semiconductor technology and science Vol.1 No.4
The influence of argon, oxygen, and nitrogen admixtures on the dissociation of $Cl_2$ molecules in a glow discharge low-temperature plasma under the constant pressure conditions was investigated. For $Cl_2/Ar$ and $Cl_2/O_2$mixtures, the concentration of chlorine atoms was observed to be a practically constant at argon or oxygen concentrations up to 50%. This invariability is a most pro bably explained by relative increase in rate of $Cl_2$ direct electron impact dissociation due to the changes in electrophysical parameters of plasma such as EEDF, electron drift rate and mean energy. For all the considered mixtures, the contribution of stepwise dissociation involving active species from gas additives (metastable atoms and molecules, vibrationally excited molecules) was found to be negligible.
Efremov, A.,Lee, J.,Kwon, K.H. Elsevier Sequoia 2017 THIN SOLID FILMS - Vol.629 No.-
This work discusses the plasma characteristics and chemistry in CF<SUB>4</SUB>+Ar, Cl<SUB>2</SUB>+Ar and HBr+Ar gas systems in a comparative scale under one and the same operating condition. The investigation was carried out using the combination of plasma diagnostics by Langmuir probes and 0-dimensional plasma modeling in the planar inductively coupled plasma reactor at constant gas pressure (1.33Pa), input power (800W) and bias power (300W), but with variable (0-80%) Ar fraction in a feed gas. The study was focused on the parameters influencing the kinetics of ion-assisted chemical reaction and thus, determining the output characteristics of the etching process (etching rate, anisotropy). These parameters are the fluxes of F, Cl or Br atoms, ion bombardment energy, ion energy flux and neutral/charged species ratio. The differences between CF<SUB>4</SUB>+Ar, Cl<SUB>2</SUB>+Ar and HBr+Ar plasmas which seem to be important for the correct choice of the working gas for the particular etched material were discussed and explained in the framework of formation-decay kinetics of neutral and charged species.
On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N2/Ar Inductively Coupled Plasma
Lee, J.,Efremov, A.,Kim, K.,Kwon, K. H. Springer Science + Business Media 2017 Plasma chemistry and plasma processing Vol.37 No.2
<P>Etching mechanisms of SiC thin films in CF4/CH2F2/N-2/Ar inductively coupled plasmas were studied based on the correlations between measured SiC etching rates and model-predicted fluxes of plasma active species. Plasma chemistry was analyzed using Langmuir probe diagnostics, optical emission spectroscopy and 0-dimensional (global) plasma modeling. It was found that, under the given set of process conditions, the SiC etching kinetics is not affected by the thickness of the fluorocarbon polymer film and corresponds to the steady-state ion-assisted chemical reaction with the domination of the chemical etching pathway. It was proposed that the reaction probability between SiC and F atoms depends on both ion energy flux and the flux of polymerizing radicals through the balance active surface sites acceptable for the adsorption of F atoms.</P>
The etching mechanism of (Zr0.8Sn0.2)TiO4 (ZST) film
K.-H. Kwon,A.M. Efremov,G.-Y. Yeom,Y. I. Kang 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We investigated the etching mechanism of (Zr0:8Sn0:2)TiO4 lm by using Cl2/O2-gas plasma. To understand the etching mechanism and etching rate behavior from the point of view of internal plasma properties and active particle kinetics, we used the plasma modeling. The data of Langmuir probe measurements and optical emission spectroscopy were used both as input data and model verication parameters etc. We also extracted the etching characteristics of the ZST lm such as etch rate and analyzed the surface reaction by using XPS with various Cl2/O2-gas mixing ratios. On the basis of plasma modeling and experimental data, we will discuss the mechanism of ZST lm etching in detail.