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Mechanisms of $Cl_2$ Molecules Dissociation in a Gas Discharge Plasma in Mixtures with Ar, $O_2.N_2$
Efremov, A.M.,Kwon, Kwang-Ho The Institute of Electronics and Information Engin 2001 Journal of semiconductor technology and science Vol.1 No.4
The influence of argon, oxygen, and nitrogen admixtures on the dissociation of $Cl_2$ molecules in a glow discharge low-temperature plasma under the constant pressure conditions was investigated. For $Cl_2/Ar$ and $Cl_2/O_2$mixtures, the concentration of chlorine atoms was observed to be a practically constant at argon or oxygen concentrations up to 50%. This invariability is a most pro bably explained by relative increase in rate of $Cl_2$ direct electron impact dissociation due to the changes in electrophysical parameters of plasma such as EEDF, electron drift rate and mean energy. For all the considered mixtures, the contribution of stepwise dissociation involving active species from gas additives (metastable atoms and molecules, vibrationally excited molecules) was found to be negligible.
A.M.Efremov,Dong-PyoKim,Chang-IlKim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.6
In this work, we carried out an investigation of the in uence of the Cl2/CF4 mixing ratio on both the plasma parameters and the volume densities of the neutral and the charged particles in an inductively coupled plasma system. The shift in the gas mixture content from pure Cl2 to CF4 was found to lead decrease in the electron and the ion densities but to an increase in the electron temperature. Although a stepwise dissociation did not contribute to the formation of Cl and F atoms, a change in the gas mixing ratio in uenced electron-impact dissociation and recombination kinetics. As a result, in a Cl2-rich plasma, a non-monotonic behavior of the Cl atom density is possible.
The etching mechanism of (Zr0.8Sn0.2)TiO4 (ZST) film
K.-H. Kwon,A.M. Efremov,G.-Y. Yeom,Y. I. Kang 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We investigated the etching mechanism of (Zr0:8Sn0:2)TiO4 lm by using Cl2/O2-gas plasma. To understand the etching mechanism and etching rate behavior from the point of view of internal plasma properties and active particle kinetics, we used the plasma modeling. The data of Langmuir probe measurements and optical emission spectroscopy were used both as input data and model verication parameters etc. We also extracted the etching characteristics of the ZST lm such as etch rate and analyzed the surface reaction by using XPS with various Cl2/O2-gas mixing ratios. On the basis of plasma modeling and experimental data, we will discuss the mechanism of ZST lm etching in detail.