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차세대 GaN RF 전력증폭 소자 및 집적회로 기술 동향
이상흥,임종원,강동민,백용순,Lee, S.H.,Lim, J.W.,Kang, D.M.,Baek, Y.S. 한국전자통신연구원 2019 전자통신동향분석 Vol.34 No.5
Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.
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이상흥,장성재,임종원,백용순,Lee, S.H.,Chang, S.J.,Lim, J.W.,Baek, Y.S. 한국전자통신연구원 2017 전자통신동향분석 Vol.32 No.6
In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.
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문재경,배성범,장우진,임종원,남은수,Mun, J.K.,Bae, S.B.,Chang, W.J.,Lim, J.W.,Nam, E.S. 한국전자통신연구원 2012 전자통신동향분석 Vol.27 No.1
차세대 화합물 반도체 플랫폼으로 각광을 받고 있는 GaN 전자소자 글로벌 연구개발 동향에 관하여 기술하고자 한다. GaN 전자소자는 와이드 밴드갭(Eg=3.4eV)과 고온 안정성($700^{\circ}C$) 등 재료적인 특징으로 인하여 고출력 RF 전력증폭기와 고전력용 전력반도체 응용에 큰 장점을 가진다. GaN 전자소자 기술동향에서는 먼저 미국, 유럽, 일본을 중심으로 한 대형 국책 연구프로젝트 분석을 통한 RF 전력증폭기 연구개발 방향을 살펴보고, 후반부에서는 이동통신 기지국, 선박 및 군용 레이더 트랜시버용 고출력 RF 전력증폭기의 응용 분야에 관하여 알아본다. 이러한 총체적인 동향분석을 통하여 차세대 반도체의 신시장 개척과 선진입을 위한 GaN 전자소자의 연구개발 방향과 조기상용화의 중요성을 함께 생각해보고자 한다.
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장우진,문재경,이형석,임종원,백용순,Chang, W.,Mun, J.K.,Lee, H.S.,Lim, J.W.,Baek, Y.S. 한국전자통신연구원 2018 전자통신동향분석 Vol.33 No.6
In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.
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이상흥,김성일,민병규,임종원,권용환,남은수,Lee, S.H.,Kim, S.I.,Min, B.G.,Lim, J.W.,Kwon, Y.H.,Nam, E.S. 한국전자통신연구원 2014 전자통신동향분석 Vol.29 No.6
GaN(Gallium Nitride)는 3.4eV의 넓은 에너지 갭으로 인하여 고전압에서 동작이 가능하고, 분극전하를 이용한 캐리어 농도가 높아 높은 전류밀도와 전력밀도를 얻을 수 있으며, 높은 전자 이동도와 포화 속도로부터 고속 동작이 가능하여 고주파 고출력 고효율 소형의 전력증폭기 소자의 재료로 적합하다. 본고에서는 민수 및 군수 겸용 Ku-대역 및 Ka-대역 GaN 고출력 전력증폭기(SSPA: Solid-State Power Amplifier)와 관련된 GaN 전력증폭 소자, GaN 전력증폭기 MMIC(Microwave Monolithic Integrated Circuit), 내부정합 패키지형 GaN 전력증폭기 및 GaN SSPA에 대하여, 국내외 특허 기술동향과 연구개발 기술동향을 중심으로 고찰하고자 한다. 국외의 GaN 고주파 고출력 전력증폭기 기술의 연구동향이나 특허동향을 심층분석하여 연구개발에 활용하고자 한다.
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차세대 레이더용 C-/X-/Ku-대역 GaN 집적회로 기술 동향
안호균,이상흥,김성일,노윤섭,장성재,정현욱,임종원,Ahn, H.K.,Lee, S.H.,Kim, S.I.,Noh, Y.S.,Chang, S.J.,Jung, H.U.,Lim, J.W. 한국전자통신연구원 2022 전자통신동향분석 Vol.37 No.5
GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.
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吳仁赫,金容泰,李眞悟,陳秀一,林鍾遠 최신의학사 1969 最新醫學 Vol.12 No.6
For years after the introduction of gastroendoscopy in 1932, frequent efforts 1, 4, s, 9, s, 101 20121) were made to compare the relative value of roentgenologic and gastroendoscopic examinations in the diagnosis of gastric diseases. Today it seems fairly obvious that roentgenologic examination is the primary method for screening of stomach diseases and gastroendoscopy is an adjunct to it. However, gastroendoscopy performs its greatest service in the detection of lesions which, for one reason or another, had _not been. found at roentgenologic examination. It is quite clear that by the judicious use of both methods - greater. diagnostic accuracy can be obtained than by the use of either method alone. This is a report of six cases showing the different findings between the roentgenologic and gastroendoscopic examination, and some commentments are described with some references appeared previously.
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