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임종엽,이용구,박종범,김민영,양계준,임동건,Lim, Jong-Youb,Lee, Yong-Koo,Park, Jong-Bum,Kim, Min-Young,Yang, Kea-Joon,Lim, Dong-Gun 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.9
$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.
SOD방법을 이용한 저가 EFG 리본 실리콘 태양전지의 효율 향상에 관한 연구
김병국,임종엽,저호,오병진,박재환,이진석,장보윤,안영수,임동건,Kim, Byeong-Guk,Lim, Jong-Youb,Chu, Hao,Oh, Byoung-Jin,Park, Jae-Hwan,Lee, Jin-Seok,Jang, Bo-Yun,An, Young-Soo,Lim, Dong-Gun 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.3
The high cost of crystalline silicon solar cells has been considered as one of the major obstacles to their terrestrial applications. Spin on doping (SOD) is presented as a useful process for the manufacturing of low cost solar cells. Phosphorus (P509) was used as an n-type emitters of solar cells. N-type emitters were formed on p-type EFG ribbon Si wafers by using a SOD at different spin speed (1,000~4,000 rpm), diffusion temperatures ($800^{\circ}C{\sim}950^{\circ}C$), and diffusion time (5~30 min) in $N_2+O_2$ atmosphere. With optimum condition, we were able to achieve cell efficiency of 14.1%.
폴리이미드 기판 위에 RF 마그네트론 스퍼터링 공정으로 증착된 ZnO:Ga 박막의 특성
박승범,김정연,김병국,임종엽,여인환,안상기,권순용,박재환,임동건,Park, Seung-Beum,Kim, Jeong-Yeon,Kim, Byeong-Guk,Lim, Jong-Youb,Yeo, In-Hwan,Ahn, Sang-Ki,Kweon, Soon-Yong,Park, Jae-Hwan,Lim, Dong-Gun 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.5
The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on polyimide substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the polyimide substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 120 sec, the resistivity of GZO films on the polyimide substrate was $1.90{\times}10^{-3}{\Omega}-cm$.