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SOD방법을 이용한 저가 EFG 리본 실리콘 태양전지의 효율 향상에 관한 연구
김병국,임종엽,저호,오병진,박재환,이진석,장보윤,안영수,임동건,Kim, Byeong-Guk,Lim, Jong-Youb,Chu, Hao,Oh, Byoung-Jin,Park, Jae-Hwan,Lee, Jin-Seok,Jang, Bo-Yun,An, Young-Soo,Lim, Dong-Gun 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.3
The high cost of crystalline silicon solar cells has been considered as one of the major obstacles to their terrestrial applications. Spin on doping (SOD) is presented as a useful process for the manufacturing of low cost solar cells. Phosphorus (P509) was used as an n-type emitters of solar cells. N-type emitters were formed on p-type EFG ribbon Si wafers by using a SOD at different spin speed (1,000~4,000 rpm), diffusion temperatures ($800^{\circ}C{\sim}950^{\circ}C$), and diffusion time (5~30 min) in $N_2+O_2$ atmosphere. With optimum condition, we were able to achieve cell efficiency of 14.1%.
저가 다결정 EFG 리본 웨이퍼의 표면 반사도 특성 최적화
김병국,이용구,저호,오병진,박재환,이진석,장보윤,안영수,임동건,Kim, Byeong-Guk,Lee, Yong-Koo,Chu, Hao,Oh, Byoung-Jin,Park, Jae-Hwan,Lee, Jin-Seok,Jang, Bo-Yun,An, Young-Soo,Lim, Dong-Gun 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.2
Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of $SiN_x$ was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 ${\mu}m$ and a resistivity of 3 $\Omega-cm$. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF : $HNO_3$. After acid vapor texturing process, nanostructure of less than size of 1 ${\mu}m$ was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of $SiN_x$.