http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
다결정 AIN 박막을 이용한 800 MHz 대 표면탄성파 대역통과 필터개발에 관한 연구
이형규,최익권,용윤중,이재영 한국전자파학회 1997 한국전자파학회논문지 Vol.8 No.4
본 논문에서는 다결정 AlN 박막을 이용하여 800 MHz 대역의 표면탄성파 펼터를 시험제작한 연구 결과를 제시한다. 고주파 스퍼터링 방법에 의하여 실리콘 기판위에 증착시켜 X선 rocking curve의 반치폭이 $3^{\circ}$이고 박막 성장 방향으로 결정의 c축이 우선 배향된 박막을 얻었다. 임펄수 모텔링 기법을 이용하여 시험제작된 표면탄성파 필터는 중심주파수 865 MHz, 3 dB 대역폭 45 MHz이며 측정된 주파수 응답곡선으로부터 유도된 전기기계 결합상수는 0.8 %, 표면탄성파 전달속도는 5,709 m/s이다. We present the results on the applicability of the polycrystalline AIN thin films for a surface acoustic wave filter operating at 800 MHz frequency. The films show the FWHM of 3 .deg. from th X-ray rocking curve, which indicates that the c-axis of the films is pre- ferentially oriented along the growth direction. The fabricated band pass filters exhibit the center frequency of 865 MHz with 3dB band-width of 45 MHz. From the measured frequency response, the electro-mechanical coupling constant of 0.8% and the SAW velocity of 5,709 m/s are obtained. Thus, we conclude that the sputtered AIN films are feasible for the fabrication of uper UHF band SAW filters.
이형규,강형원,최지현,Lee, Hyeung-Gyu,Kang, Hyung-Won,Choi, Ji-Hyun 한국세라믹학회 2005 한국세라믹학회지 Vol.42 No.10
Dielectric and Piezoelectric properties of complex perovskite 0.92Pb($Zr_{1/2}Ti_{1/2})O_{3}-(0.08-x)Pb(Cu_{1/3}Nb_{2/3})O_{3}-xPb(Mn_{1/3}Nb_{2/3})O_{3}(0{\leq}x{\leq}0.080$) (PZT-PCN-PMN) system were investigated as a function of PMN content. With the increase of PMN content of the sintered specimens, tetragonal phase was coexisted with rhombohedral phase, the dielectric constant was decreased, mechanical quality factor ($Q_{m}$) was inceased, and optimal sintering temperature was increased up to 1050$^{\circ}C$. For the composition of x = 0.064 sintered at 1050$^{\circ}C$ for 2 h, 1939 of maximum mechanical quality factor ($Q_{m}$), 57$\%$ of electromechanical coupling factor ($k_{p}$), and 1100$^{\circ}C$ of dielectric constant, 0.37$\% $ of dielectric loss (tan $\delta$) were obtained.
내부전극패턴 변경에 따른 적층형 압전 액추에이터의 유한요소해석
이형규,강형원,Lee, Hyeung-Gyu,Kang, Hyung-Won 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.12
New piezoelectric actuator design, which can reduce the number of the stacking layer without lowering the piezoelectric displacement, is suggested in this work. Each layer of the new designed multilayer actuator has the same electrode pattern as the cross-sectioned layer of the existing multilayer actuator has. The piezoelectric displacement was calculated by Finite-Element Method (FEM) analysis. The maximum piezoelectric displacement of the new-designed actuator with 13 layers was calculated to be almost same value (55.9 ${\mu}m$) as that of the existing actuator with 25 layers(60.1 ${\mu}m$).