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FeMX(M = Mo, Ta, X=N, C) 박막의 자기 특성 및 미세구조 변화
신동훈(D. H. Shin),최운(W. Choi),김형준(H. J. Kim),남승의(S. Y. Nam),안동훈(D. H. Ahn) 한국자기학회 1995 韓國磁氣學會誌 Vol.5 No.5
Magnetic properties of FeMoN, FeMoTaN, FeTaN and FeTaC films deposited by DC magnetron reactive sputter were investigated, and correlated with their microstructure. FeMoN films were not showen the soft magnetic properties, because of generated Fe₂Mo, Fe_(3-2)N and Fe₄N phases. Ta added films, however, effectivly retarded the α-Fe grain growth and suppressed the generation of Fe nitrides or carbides during heat treatement. The soft magnetic properties of Bs: 15 kG, Hc: 0.25 Oe, μ' 4000(at 5 ㎒), and Bs: 14.5 kG, Hc: 0.25 Oe, μ': 2700 (5㎒) were observed in Fe_(78.8)Ta_(8.5)N_(12.7) and Fe_(75.6)Ta_(8.l)C_(16.3) films, respectively.
FSA를 적용한 초고압 지중송전 XLPE케이블의 부분방전 진단기술
신동훈(D-H Shin),이용성(Y-S Lee),양종석(J-S Yang),박노준(N-J Park),박대희(D-H Park) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
We studied the improved detecting method on Partial Discharge occurred in EHV power cable. In this field, we usually applied the several sensor for partial discharge. This is metal foil employed with the capacity foil-sensor. We detected the partial discharge through regularly array standard foil-sensor for the better improvement of existed foil-sensor in this research. This test is progressed in real EHV liveline, we analyzed that compare existed foil-sensor to detect character of FSA(Foil Sensor Array) for this test. From this result, detective character of fabricated FSA showed better result than existed foil-sensor.
100 nm T-gate의 InGaAs/InAlAs/GaAs metamorphic HEMT 소자 제작 및 특성에 관한 연구
김형상,신동훈,김순구,김형배,임현식,김현정,Kim, H.S.,Shin, D.H.,Kim, S.K.,Kim, H.B.,Im, Hyun-Sik,Kim, H.J. 한국진공학회 2006 Applied Science and Convergence Technology Vol.15 No.6
본 논문에서는 100 nm 게이트 길이를 갖는 InGaAs/InAlAs/GaAs MHEMT(metamorphic high electron mobility transistors)m의 DC와 RF 특성을 분석 하였다. 이중 노광 방법으로 ZEP520/P(MMA-MAA)/PMMA 3층 구조의 레지스터와 게이트 길이 100 nm인 게이트를 제작하였다. 게이트의 단위 폭이 $70\;{\mu}m$인 2개의 게이트와 길이가 100 nm로 제작된 MHEMT를 DC 및 RF특성을 조사하였다. 최대 드레인 전류 밀도는 465 mA/mm, 상호전달 컨덕턴스는 844 mS/mm이, RF 측정으로부터 전류 이득 차단 주파수는 192 GHz와 최대 진동주파수 310 GHz인 특성을 보였다. We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.