CH3CN 감지를 위한 SnO2/Al2O3/Pd 후막소자의 제조 및 그 특성

박효덕,조성국,손종락,이덕동 ( Hyo Derk Park,Sung Guk Jo,Jong Rack Sohn,Duk Dong Lee ) 한국센서학회 1992 센서학회지 Vol.1 No.1

The optimum base material was selected by the thermal decomposition temperature of CH₃CN on the surface of various metal oxides, and the FT-IR analyses of its products. On the surface of SnO₂, CH₃CN was initiated to decompose at 130℃ and produced a lot of products at 200℃. The products from the reaction were found to be H₂O, NIA, and CO, but N₂O has started to produce at 320℃. The sensing characteristics of SnO₂ sensor to CH,CN are influenced by the absorbed species which are produced by the oxidation reaction of CH₃CN on the surface of metal oxide. The gaseous species produced from the surface of sensing material in the oxidation reaction were found to be CO, NH₃, H₂O and NO, etc.. It was assumed that the amount of N0, play a great role to the determining sensing properties. In the condition of 170 ppm CH₃CN, the sensitivity and optimum operating temperature of SnO₂ were 70% and 300℃, respectively. In this research, the response time of CH₃CN to SnO₂/Al₂O₃/Pd sensor added with 0.2 wt% Pd was found about 10 sec and sensitivity was also found relatively high.

Tetraethylorthosilicate 용액을 침적시킨 SnO2 후막형 가스감지소자의 아세토니트릴에 대한 선택성

박효덕,조성국,손종락,이덕동 ( Hyo Derk Park,Sung Guk Cho,Jong Rack Sohn,Duk Dong Lee ) 한국센서학회 1993 센서학회지 Vol.2 No.2

The SnO/A1z03/Nbzos thick film devices added with SiO₂ were fabricated by means of the dipping into Si(CzHso)a solution and the sensing characteristics of the thick film devices to CH₃CN vapor was investigated The reaction products of CH₃CN by the heating reaction on the thick film devices were analyzed by the FT-IR method using gas reaction cell. The products of CH₃CN vapor by the surface reaction on the thick film devices were CO₂, H₂O, N₂O and the acids produced from NO_x and H₂O. Optimum processes of the thick film devices were determined by the investigation of the sensing characteristics to CH₃CN vapor. The thick film devices showed high selectivity to CH₃CN vapor and negative sensitivity by oxidizing agents (NO_x) produced during the reaction of CH₃CN vapor on the thick films.

$CH_{3}CN$ 감지를 위한 $SnO_{2}/Al_{2}O_{3}/Pd$ 후막소자의 제조 및 그 특성

박효덕,조성국,손종락,이덕동,Park, Hyo-Derk,Jo, Sung-Guk,Sohn, Jong-Rack,Lee, Duk-Dong 한국센서학회 1992 센서학회지 Vol.29 No.3

The optimum base material was selected by the thermal decomposition temperature of $CH_{3}CN$ on the surface of various metal oxides, and the FT-IR analyses of its products. On the surface of $SnO_{2}$, $CH_{3}CN$ was initiated to decompose at $130^{\circ}C$ and produced a lot of products at $200^{\circ}C$. The products from the reaction were found to be $H_{2}O$, $NH_{3}$ and CO, but $N_{2}O$ has started to produce at $320^{\circ}C$. The sensing characteristics of $SnO_{2}$ sensor to $CH_{3}CN$ are influenced by the absorbed species which are produced by the oxidation reaction of $CH_{3}CN$ on the surface of metal oxide. The gaseous species produced from the surface of sensing material in the oxidation reaction were found to be CO, $NH_{3}$, $H_{2}O$ and $NO_{x}$ etc.. It was assumed that the amount of $NO_{x}$ play a great role to the determining sensing properties. In the condition of 170 ppm $CH_{3}CN$, the sensitivity and optimum operating temperature of $SnO_{2}$ were 70% and $300^{\circ}C$, respectively. In this research, the response time of $CH_{3}CN$ to $SnO_{2}/Al_{2}O_{3}/Pd$ sensor added with 0.2 wt % Pd was found about 10 sec and sensitivity was also found relatively high. $CH_{3}CN$ 감지를 위한 최적 모물질은 $CH_{3}CN$의 억분해 온도와 생성량을 적외선 흡수 스펙트럼으로부터 비교함으로써 선정되었다. $SnO_{2}$ 표면에서 $CH_{3}CN$은 $130^{\circ}C$에서부터 열분해되기 시작하여 $300^{\circ}C$에서는 많은 양의 생성물을 생성하였다. 산화반응에 의한 $CH_{3}CN$은 $CO_{2}$, $NH_{3}$ 및 $H_{2}O$로 열분해되었으며, $320^{\circ}C$에서부터 $N_{2}O$가 생성되기 시작하였다. $SnO_{2}$ 감지소자의 $CH_{3}CN$에 대한 감지특성은 $CH_{3}CN$과 금속산화물과의 산화반응으로 인해 생성된 흡착종에 의해 영향을 받았다. 감지물질표면과의 반응에서 생성된 흡착종은 CO, $NH_{3}$, $H_{2}O$ 및 $NO_{x}$ 등이었다. $NO_{x}$의 생성량은 감지특성에 큰 영향을 나타냄을 알 수 있다. 170 ppm의 $CH_{3}CN$에 대한 $SnO_{2}$의 감도와 동작온도는 각각 70% 정도와 $300^{\circ}C$이었다. 0.2wt% Pd 첨가된 $SnO_{2}/Al_{2}O_{3}/Pd$ 감지소자는 $CH_{3}CN$에 대해 높은 감도를 나타내었으며, 응답시간은 약 10초이었다.

loT 시대에서의 스마트센서 기술

박효덕(Hyo-Derk Park) 대한기계학회 2016 대한기계학회 춘추학술대회 Vol.2016 No.5

열산화법으로 형성한 $Pt-SnO_{2-x}$ 박막소자의 CO 가스 감지특성

심창현,박효덕,이재현,이덕동,Shim, Chang-Hyun,Park, Hyo-Derk,Lee, Jae-Hyun,Lee, Duk-Dong 한국센서학회 1992 센서학회지 Vol.29 No.3

적층구조의 Pt-Sn 박막을 히터 위에서 열산화하여 $Pt-SnO_{2-x}$ 박막형 CO 가스감지소자를 제조하였다. 열증착법으로 증착된 Sn의 두께는 $4000{\AA}$이었으며 그 위에 D.C. sputtering법으로 증착된 Pt의 두께는 $14{\AA}{\sim}71{\AA}$ 이었다. XRD 분석에서 $Pt-SnO_{2-x}$ 박막은 $200{\AA}$ 정도의 입경과 주방향성이 (110)인 $(SnO_{2}){\cdot}6T$ 결정상을 보였다. $Pt-SnO_{2-x}$ 박막소자(Pt 두께 : $43{\AA}$)는 6000 ppm의 CO에 대해 80% 정도의 감도와 CO에 대해 높은 선택도를 나타내었다. 그리고 CO에 고감도를 갖는 $Pt-SnO_{2-x}$ 박막소자의 열산화 온도와 동작온도가 각각 $500^{\circ}C$와 $200^{\circ}C$이었다. $Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

열산화법으로 형성한 Pt-SnO2-x 박막소자의 CO 가스 감지특성

심창현,박효덕,이재현,이덕동 ( Chang Hyun Shim,Hyo Derk Park,Jae Hyun Lee,Duk Dong Lee ) 한국센서학회 1992 센서학회지 Vol.1 No.1

Pt-SnO(2-x) thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was 4000 Å and the thickness of Pt deposited by D.C. sputtering on 5n thin film was 14∼71 Å range. The XRD analysis show that the Pt-SnO(2-x) thin films are` formed by grains with a diameter of about 200 Å randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. Pt-SnO_(2-x) thin film device (Pt thickness : 43 Å) to 6000 ppm CO shows the sensitivity of 80 % and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of Pt-SnO_(2-x) thin film device with high sensitivity to CO were 200℃ and 500℃, respectively.

바이폴라 공정을 이용한 압력센서용 출력전압 보상회로의 설계

이보나,김건년,박효덕 ( Bo Na Lee,Kun Nyun Kim,Hyo Derk Park ) 한국센서학회 1998 센서학회지 Vol.7 No.5

In this paper, integrated pressure sensor with calibration of offset voltage and full scale output and temperature compensation of offset voltage and full scale output were designed. The signal conditioning circuitry are designed that calibrate the offset voltage and full scale output to desired values and minimize the temperature drift of offset voltage and full scale output. Designed circuits are simulated using SPICE in a bipolar technology. The ion implanted resistor of different temperature coefficient were used to trimming the desired values. As a results, offset voltage was calibrated to 0.133V and the temperature drift of offset voltage was reduced to 42 ppm/℃. Also, the full scale output was calibrated to 4.65V and the temperature coefficient of full scale output was reduced to 40ppm℃ after temperature compensation.

SnO2 / Al2O3 / Nb2O5 후막소자의 Acetonitrile 감지특성

손종락,조성국,박효덕,이덕동 ( Jong Rack Sohn,Sung Guk Cho,Hyo Derk Park,Duk Dong Lee ) 한국화학공학회 1993 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.31 No.6

The SnO₂/Al₂O₃/Nb₂O_5 thick film sensor was fabricated by means of screen printing method. The sensing characteristics of acetonitrile was influenced by the chemical species produced by the oxidation reaction of acetonitrile on the surface of metal oxide. From the result of observed infrared spectra, the products formed by the oxidation reaction of acetonitrile were found to be mainly CO₂, NH₃ and H₂O, which influenced the sensing properties. The SnO₂ sensor added with Nb₂O_5 exhibited the sensitivity of 94% at the operation temperature of 300℃ and showed higher selectivity to acetonitrile than to CO, SO₂, CH₄ and C₄H_(10). The thick film sensor which maintained for 30 days at the operation temperature 300℃ exhibited the resistance of 25±2 kΩ and sensitivity of 84% in 85 ppm of acetonitrile.

SnO2 후막소자의 감도특성에 미치는 SiO2 의 영향

손종락,조성국,박효덕,이덕동 ( Jong Rack Sohn,Sung Guk Cho,Hyo Derk Park,Duk Dong Lee ) 한국화학공학회 1994 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.32 No.4

The SnO₂/Al₂O₃/Nb₂O_5 thick film devices added with SiO₂ were fabricated by dipping, sputtering and addition of SiO₂ powder, and the sensing characteristics to CH₃CN vapor was investigated. Among them, the device fabricated by dipping of Si(C₂H_5O)₄ solution showed high sensitivity and selectivity to CH₃CN vapor. From the results of infrared spectra, the products formed by the oxidation reaction of CH₃CN on the SnO₂/Al₂O₃/Nb₂O_5 thick film devices without addition of SiO₂ were found to be mainly CO₂, H₂O and NH₃, while on the SnO₂/Al₂O₃/Nb₂O_5 added with SiO₂, products such as CO₂, H₂O, N₂O, HNO₃ and HNO₂ were observed. The thick film devices added with SiO₂ showed high selectivity and negative sensitivity to CH₃CN vapor by means of the presence of nitrogen compounds produced through the oxidation reaction of CH₃CN. Optimum amount of Nb₂O_5 and operating temperature were 1.0 wt% and 300℃, respectively.

Sol-Gel 법으로 제조된 후막 PZT의 두께, 전극형상 및 분극공정에 따른 e₃₁, f 특성

박준식(Joon-Shik Park),양성준(Seong-Jun Yang),박광범(Kwang-Bum Park),윤대원(Dae-Won Yoon),박효덕(Hyo-Derk Park),김승현(Sung-Hyun Kim),강성군(Sung-Goon Kang),최태훈(Tae-Hoon Choi),이낙규(Nak-Kyu Lee),나경환(Kyoung-Hoan Na) 대한기계학회 2003 대한기계학회 춘추학술대회 Vol.2003 No.4

Thick PZT films are required for the cases of micro actuators and sensors with high driving force,<br/> high breakdown voltage and high sensitivity, and so on. In this work, thick PZT films were fabricated<br/> by Sol-Gel multi-coating method. Total 8 types of samples using thick PZT films with thicknesses, about<br/> 1㎛ and 2㎛, and Pt top electrodes shapes for measuring transverse piezoelectric coefficient (e 31,f) were<br/> fabricated using MEMS processes. They were characterized by fabricated e31,f measurement system<br/> before and after poling. e31,f values of samples after poling were higher than before poling. Those of 2㎛<br/> thick PZT films were also higher than 1㎛ thick PZT films. And those with long electrodes as top<br/> electrodes were also higher than shorter.