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김보환(Bo-Hwan Kim),이경태(Kyung-Tae Lee),김해동(Hae-Dong Kim),유진선(Jin-Sun Yoo) 한국추진공학회 2018 한국추진공학회 학술대회논문집 Vol.2018 No.5
초음속 흡입구에 사용되는 블리드 출구의 유동특성을 알아보기 위해 30°와 15° 각도를 갖는 루버 형상에 대해 수치해석을 수행하였다. 본 논문에서는 plenum chamber의 압력비에 따른 유량비 데이터를 확인하였고, 전산유체해석을 위해 상용소프트웨어인 Fluent v18.0을 사용하였다. 해석결과, 루버 주변에 충격파와 팽창파 등의 복잡한 유동패턴을 확인하였으며, 15° 루버의 경우에서 이러한 물리적 현상들이 완화되는 것을 확인하였다. Numerical simulations of the flow through the louver structure with 30° and 15° angles were conducted to investigate the flow characteristics of the bleed exit louvers used in supersonic inlet. In this paper, the sonic flow coefficient according to the pressure ratio of the plenum chamber was confirmed, and the commercial software Fluent v18.0 was used for computational fluid dynamics analysis. As a result of the analysis, complex flow patterns such as shock and expansion wave were confirmed around the louvers, and it was confirmed that these physical phenomena were alleviated in the case of the 15° louvers.
김보환 ( Bo Whan Kim ),이진하 ( Jin Ha Lee ),김태진 ( Tai Jin Kim ) 한국센서학회 2005 센서학회지 Vol.14 No.2
N/A Six modules composed of individual sensors and circuit systems for oxygen, temperature, humidity, volatile organic compounds, dust, carbon dioxide, in the indoor air quality control were examined to see their individual performances. Experimental results showed that all the six modules were in good linearity with individual concentration variations
Al 그리드와 ZnO 투명전도막 의 공정변화에 따른 Cu(In,Ga)Se<sub>2</sub> 박막태양전지의 특성 연구
조보환,김선철,문선홍,김승태,안병태,Cho, Bo Hwan,Kim, Seon Cheol,Mun, Sun Hong,Kim, Seung Tae,Ahn, Byung Tae 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.1
CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.