SHS 공정으로 제조된 Mo<SUB>x</SUB>W<SUB>1-x</SUB>Si₂ 발열체의 가속수명시험과 고장분석

이동원(Dong-Won Lee),이상헌(Sang-Hun Lee),김용남(Yong-Nam Kim),이희수(Heesoo Lee),이성철(Sung-Chul Lee),구상모(Sang-Mo Koo),오종민(Jong-Min Oh) 한국전기전자학회 2017 전기전자학회논문지 Vol.21 No.3

고온자전합성과 후열처리 공정으로 MoxW1-xSi₂ 발열체를 제조하였다. MoxW1-xSi₂ 발열체의 신뢰성을 검증하기 위해 가속수명시험을 수행하였으며, 수명시간을 Minitab 프로그램으로 추정하였다. 또한, 가속수명시험 후의 MoxW1-xSi₂ 발열체의 고장분석을 전기적과 구조적 특성으로부터 수행하였다. 그 결과, MoxW1-xSi₂ 발열체의 지배적인 고장 유형은 발열체 내부의 크랙 형성과 SiO₂ 보호층의 박리임을 확인하였다. MoxW1-xSi₂ heaters were fabricated by self-propagating high-temperature synthesis (SHS) process and post sintering process. To validate the reliability of the MoxW1-xSi₂ heaters, the accelerated life test (ALT) was conducted, and then lifetime to MoxW1-xSi₂ heaters was estimated by using Minitab programs. Also, the failure analysis of MoxW1-xSi₂ heaters after ALT was performed through electrical and structural properties. As the results, it was confirmed that the dominant failure mode of MoxW1-xSi₂ heaters is the crack formation in heaters and the delamination of protective SiO₂ layers.

SHS 공정에 의해 제조된 Mo_xW_1-xSi₂ 발열체의 열화메커니즘

이동원,이상헌,김용남,이성철,구상모,오종민,Lee, Dong-Won,Lee, Sang-Hun,Kim, Yong-Nam,Lee, Sung-Chul,Koo, Sang-Mo,Oh, Jong-Min 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.10

The degradation mechanism of $Mo_xW_{1-x}Si_2$ ultrahigh-temperature heating elements fabricated by self-propagating high-temperature synthesiswas investigated. The $Mo_xW_{1-x}Si_2$ specimens (with and without post-annealing) were subjected to ADTs (accelerated degradation tests) at temperatures up to $1,700^{\circ}C$ at heating rates of 3, 4, 5, 7, and $14^{\circ}C/min$. The surface loads of all the specimen heaters were increased with the increase in the target temperature. For the $Mo_xW_{1-x}Si_2$ specimens without annealing, many pores and secondary-phase particles were observed in the microstructure; the surface load increased to $23.9W/cm^2$ at $1,700^{\circ}C$, while the bending strength drastically reduced to 242 MPa. In contrast, the $Mo_xW_{1-x}Si_2$ specimens after post-annealing retained $single-Mo_xW_{1-x}Si_2$ phases and showed superior durability after the ADT. Consequently, it is thought that the formation of microcracks and coarse secondary phases during the ADT are the main causes for the degraded performance of the $Mo_xW_{1-x}Si_2$ heating elements without post-annealing.

탄소나노튜브를 첨가한 4H-SiC MOS 캐패시터의 전기적 특성

이태섭,구상모,Lee, Taeseop,Koo, Sang-Mo 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.9

In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

Programmable Metallization Cell 응용을 위한 Ag-doped 칼코게나이드 박막의 전기적 저항 변화 특성

최혁,구상모,조원주,이영희,정홍배,Choi, Hyuk,Koo, Sang-Mo,Cho, Won-Ju,Lee, Young-Hie,Chung, Hong-Bay 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.12

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

중성자 조사된 SiC Schottky Diode의 온도 의존 특성

김성수,구상모,Kim, Sung-Su,Koo, Sang-Mo 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.10

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

금속 (Pt)과 4H-SiC의 계면상태에 따른 실리콘 카바이드 기반 고온 가스센서 특성 분석

정지철,구상모,Jung, Ji-Chul,Koo, Sang-Mo 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.4

Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K~775 K have been studied and some fundamental simulations have also been performed.

고내압 SiC-IGBT 소자 소형화에 관한 연구

김성수,구상모,Kim, Sung-Su,Koo, Sang-Mo 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.11

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

Ni/CNT/SiO2 구조의 4H-SiC MIS 캐패시터의 전기적 특성

이태섭,구상모,Lee, Taeseop,Koo, Sang-Mo 한국전기전자학회 2014 전기전자학회논문지 Vol.18 No.4

본 연구에서는, Ni/CNT/$SiO_2$ 구조의 4H-SiC MIS 캐패시터를 제작하고 전기적 특성을 조사하였다. 이를 통하여 4H-SiC MIS 소자에서 탄소나노튜브의 역할을 분석하고자 하였다. 탄소나노튜브는 이소프로필알코올과 혼합하여 $SiO_2$ 표면에 분산하였다. 소자의 전기적 특성 분석을 위하여 300-500K의 온도 범위에서 소자의 정전용량-전압 특성을 측정하였다. 밴드 평탄화 전압은 양의 방향으로 shift되었다. 정전용량-전압 그래프로부터 계면 포획 전하 밀도 및 산화막 포획 전하 밀도가 유도되었다. 산화막의 상태는 4H-SiC MIS 구조의 계면에서 전하 반송자 또는 결함 상태와 관련된다. 온도가 증가함에 따라 밴드 평탄화 전압은 음의 방향으로 shift되는 결과를 얻었다. 실험 결과로부터, Ni과 $SiO_2$ 계면에 탄소나노튜브를 첨가함에 따라 4H-SiC MIS 캐패시터의 게이트 특성을 조절 가능할 것으로 판단된다. In this study, the electrical characteristics of Ni/CNT/$SiO_2$ structures were investigated in order to analyze the mechanism of carbon nanotubes in 4H-SiC MIS device structures. We fabricated 4H-SiC MIS capacitors with or without carbon nanotubes. Carbon nanotubes were dispersed by isopropyl alcohol. The capacitance-voltage (C-V) is characterized at 300 to 500K. The experimental flat-band voltage ($V_{FB}$) shift was positive. Near-interface trapped charge density and oxide trapped charge density values of Ni/CNT/$SiO_2$ structure were less than values of reference samples. With increasing temperature, the flat-band voltage was negative. It has been found that its oxide quality is related to charge carriers or defect states in the interface of 4H-SiC MIS capacitors. Gate characteristics of 4H-SiC MIS capacitors can be controlled by carbon nanotubes between Ni and $SiO_2$.

후열 처리에 따른 Ga₂O₃/4H-SiC 이종접합 다이오드 특성 분석

이영재,구상모,Lee, Young-Jae,Koo, Sang-Mo 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.2

Ga₂O₃/n-type 4H-SiC heterojunction diodes were fabricated by RF magnetron sputtering. The optical properties of Ga₂O₃ and electrical properties of diodes were investigated. I-V characteristics were compared with simulation data from the Atlas software. The band gap of Ga₂O₃ was changed from 5.01 eV to 4.88 eV through oxygen annealing. The doping concentration of Ga₂O₃ was extracted from C-V characteristics. The annealed oxygen exhibited twice higher doping concentration. The annealed diodes showed improved turn-on voltage (0.99 V) and lower leakage current (3 pA). Furthermore, the oxygen-annealed diodes exhibited a temperature cross-point when temperature increased, and its ideality factor was lower than that of as-grown diodes.

p-Pillar 영역의 두께와 농도에 따른 4H-SiC 기반 Superjunction Accumulation MOSFET 소자 구조의 최적화

정영석,구상모,Jeong, Young-Seok,Koo, Sang-Mo 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.6

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.