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$CHF_3/C_2F_6$ 반응성이온 건식식각에 의해 변형된 실리콘 표면의 열적 거동에 관한 연구
박형호,권광호,곽병화,이중환,이수민,권오준,김보우,성영권,Park, Hyung-Ho,Kwon, Kwang-Ho,Koak, Byong-Hwa,Lee, Joong-Whan,Lee, Soo-Min,Kwon, Oh-Joon,Kim, Bo-Woo,Seong, Yeong-Gwon 한국재료학회 1992 한국재료학회지 Vol.2 No.1
실릴콘 산화막을 $CHF_3/C_2F_6$ 혼합가스를 사용하여 반응성이온 건식식각을 행할 때 실리콘 표면에 형성되는 잔류막과 손상충의 열적 거동을 X-선 광전자 분광기(XPS)와 이차이온 질량 분석기 (SIMS)를 사용, 연구하였다. 저항가열을 통한 in-situ 분석에 의해 폴리머 잔류막은 $200^{\circ}C$부터 분해가 시작되고 $400^{\circ}C$ 이상의 가열에서는 graphite 형태의 탄소 결합체를 형성하며 분해됨을 알았다. 질소 분위기하의 급속 열처리를 통해 잔류막의 열분해는 $800^{\circ}C$ 이상에서 완료되고 손상층을 형성하는 침투 불순원소의 기판 외부로의 확산이 관찰되었다. Thermal behavior of residue and damaged layer formed by reactive ion etching (RIE) in $CHF_3/C_2F_6$ were investigated using X-ray photoelectron spectroscopy(XPS) and secondary ion mass spec-trometry(SIMS) techniques. Decomposition of polymer residue film begins at $200^{\circ}C$ and above $400^{\circ}C$ carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal treatment above $800^{\circ}C$ under nitrogen atmosphere and out-diffusion of carbon and fluorine of damaged layer is observed.
유도결합형 BCl<sub>3</sub>/Ar 플라즈마를 이용한 Al<sub>2</sub>O<sub>3</sub> 박막의 식각 특성
김용근,권광호,Kim, Young-Keun,Kwon, Kwang-Ho 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.6
In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.
이하나,권광호,김진구,Lee, Ha-Na,Kwon, Kwang-Ho,Kim, Jin-Koo 한국전산구조공학회 2012 한국전산구조공학회논문집 Vol.25 No.1
본 논문에서는 강판벽이 설치된 골조 구조물의 연쇄붕괴 거동을 비선형 정적 pushdown 해석을 이용하여 평가하였다. 해석모델은 중력하중에 대해서 설계된 2층 2경간 철골구조물이며, 중앙 기둥을 제거하고 하중을 서서히 증가시키며 하중-변위 관계를 구하였다. 구조물의 전체적인 거동뿐만 아니라 부분적인 응력과 변형을 파악하기 위하여 ABAQUS를 이용한 유한요소해석을 수행하였다. 해석을 통해서 구조물의 경간 길이 및 설치된 강판의 두께의 변화에 따른 연쇄붕괴 거동을 평가하였으며, 샛기둥을 이용하여 강판을 분할하고 분할된 강판의 위치에 따른 연쇄붕괴 성능의 변화를 관찰하였다. 해석결과에 따르면 경간의 길이가 증가할수록 연쇄붕괴를 방지하기 위하여 요구되는 강판의 두께 또한 증가하며, 분할된 강판의 수가 증가할수록 연쇄붕괴에 대한 저항성능이 약간 증가하지만 그 영향은 그리 크지 않은 것으로 나타났다. 또한 개구부로 인하여 일부 경간에만 강판이 설치된 경우에도 연쇄붕괴 저항성능이 어느 정도 증가하는 것으로 나타났다. In this study the progressive collapse behavior of a moment frame with infill steel panels is evaluated using nonlinear static pushdown analysis. The analysis model is a two story two span structure designed only for gravity load, and the load-displacement relationship is obtained with the center column removed. To obtain local stress and strain as well as the global structural behavior, finite element analysis is conducted using ABACUS. Through the analysis the effect of the span length and the thickness of the steel plate on the progressive collapse behavior of the structure is investigated, and the effect of the dividing the infill panel using stud columns is also studied. According to the analysis results, the thickness of the panels required to prevent progressive collapse increases as the span length increases, and as the number of panel division increases the progressive collapse resisting capacity increases slightly but the effect is not significant. It is also observed that when the infill panel is installed in only a part of the span the progressive collapse resisting capacity is somewhat increased.
Ar/Cl<sub>2</sub> 혼합가스를 이용한 Ba<sub>2</sub>Ti<sub>9</sub>O<sub>20</sub>(BTO) 박막의 유도결합 플라즈마 식각
김용근,권광호,이현우,Kim, Young-Keun,Kwon, Kwang-Ho,Lee, Hyun-Woo 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.4
This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.
플라즈마 진단에 의한 PECVD SiO<sub>2</sub> 증착의 불균일성 원인 연구
함용현,권광호,이현우,Ham, Yong-Hyun,Kwon, Kwang-Ho,Lee, Hyun-Woo 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.2
The cause of the thickness non-uniformity in the large area deposition of $SiO_2$ films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the $SiO_2$ films, it was conformed that the non-uniform deposition of $SiO_2$ films was related with the spatial distribution of the oxygen radical density and electron temperature.
Cl<sub>2</sub>/Ar 혼합가스를 이용한 VO<sub>2</sub> 박막의 유도결합 플라즈마 식각
정희성,김성일,권광호,Jung, Hee-Sung,Kim, Sung-Ihl,Kwon, Kwang-Ho 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8
In this work, the etch characteristics of $VO_2$ thin films were investigated using inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixtures. To analyze the plasma characteristics, a quadrupole mass spectrometer (QMS), an optical emission spectroscopy (OES), and a Langmuir probe measuring system were used. The surface reaction of the $VO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS). It was found that an increase in Ar fraction in the $Cl_2/Ar$ plasma at fixed gas pressure, input power, and bias power resulted in increasing $VO_2$ etch rate which reached a maximum value of 87.6 nm/min at 70-75 % Ar. It was confirmed that the etch rate of the $VO_2$ films was mainly controlled by the ion flux. On the basis of measuring results, we will discuss possible etching mechanism of $VO_2$ film in the $Cl_2/Ar$ plasma.
실리카 도파로(Silica Waveguide) 제작을 위한 Inductively Coupled Plasma에 의한 산화막 식각특성 연구
박상호(Sang-Ho Park),권광호(Kwang-Ho Kwon),정명영(Myung-Young Jeong),최태구(Tae-Goo Choi) 한국진공학회(ASCT) 1997 Applied Science and Convergence Technology Vol.6 No.3
본 실험은 고밀도 플라즈마원인 inductively coupled plasma(ICP)를 이용하여 실리카 도파로의 코아를 형성하고자 하였다. CF₄/CHF₃ 유량비, bias power 및 source power 등의 변화에 따른 산화막의 식각 특성 즉식각 속도, 식각 단면 및 식각된 표면의 거칠기 등의 변화를 검토하였다. 또한 single Langmuir probe 및 optical emission spectroscopy(OES)를 이용하여, 식각 변수에 따른 ICP의 플라즈마 특성을 관찰하였다. 이상의 결과를 토대로, SiO₂-P₂O_5로 구성된 실리카 도파로의 코아(core)층을 형성하였고, 이때 최적화된 식각 조건에서 식각 속도는 380 ㎚/min이고, 마스크 층으로 사용된 Al(Si 1%)와 산화막과의 식각 선택비는 30:1 이상이였다. 형성된 실리카 도파로를 scanning electron microscopy(SEM)으로 관찰한 결과, 코아층의 식각 단면이 수직하고 패턴 선폭의 손실이 거의 없음을 확인하였다. This study was tried to form the silica waveguide using high density plasma. Plasma characteristics have been investigated as a function of etch parameters using a single Langmuir probe and optical emission spectroscopy(OES). As etch parameters, CF₄/CHF₃ ratio, bias power, and source power were chosen as main variables. The oxide etch characteristics of inductively coupled plasma(ICP) dry etcher such as the etch rate, etch profile, and surface roughness were investigated as a function of etch parameters. On the basis of these results, the core pattern of the wave guide composed of SiO₂-P₂O_5 was formed. It was confirmed that the etch rate of SiO₂-P₂O_5 core layer was 380 ㎚/min and the aluminum selectivity to oxide, that is, mask layer was approximately 30:1. The SEM images showed vertical etched profiles and minimal loss of pattern width.