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MBE로 성장한 Sn/GaAs(100)층의 초기성장과 Annealing효과
우용득 동국대학교 대학원 1991 大學院硏究論集-東國大學校 大學院 Vol.21 No.-
The initial growth mode of Sn overlayers on GaAs(100) surface and the surface variation due to annealing were investigated by Auger electron spectroscopy (AES), reflection high energy electron diffraction(RHEED) and scanning electron microscopy (SEM), At room temperature, Sn was grown up to 3ML with layer by layer growth mode and with Stranski-Krastanov growth mode at higher MLs. After growing up to 10ML, crystal properties are recovered by annealing at 700K. 10ML Sn/ GaAs and GaAs/Sn/GaAs have lattice constants between GaAs and β-Sn by annealing. GaAs was grown on the Sn overlayers with thickness of 10ML and good surface morphology was achieved.
Ge 완충층의 사용과 Ge 완충층의 in situ 열처리 온도의 변화에 대한 GaAs/Ge/Si 계면에서 전위의 거동
우용득,이해익 又石大學校 1998 論文集 Vol.20 No.-
Effect of in-situ annealing after the Ge buffer layer growth on the behavior of defects at the interfaces of GaAs/Ge/Si structure grown by molecular beam epitaxy(MBE) were investigated using transmission electron microscopy (TEM) technique. Results show that the threading dislocations toward the GaAs layers were blocked more efficiently at the Ge/GaAs interface, when an in situ thermal annealing at 750℃ for 10 minutes was performed after the Ge buffer layers Growth. It was also observed that dislocation density was independent on the thickness of Ge buffer layer. Neither stacking faults nor microtwins were observed in the samples studied. probably because surface morphology of the Ge buffer layer improved due to the in situ annealing and nucleation of the defects was suppressed a result.
Woo-Yong Lee,Young-Mo Kim,Deuk-Soo Hwang,Hyun-Dae Shin,Yong-Bum Joo,Soo-Min Cha,Kyung-Hee Kim,Yoo-Sun Jeon,이선열 대한정형외과학회 2021 Clinics in Orthopedic Surgery Vol.13 No.2
Background: The purpose of this study was to compare the histologic outcomes of rotator cuff (RC) repair with demineralized bone matrix (DBM) augmentation and those without DBM augmentation and to evaluate the role of DBM for tendon-to-bone (TB) healing in a rabbit model. Methods: Twenty-six adult male New Zealand white rabbits were randomly allocated to the control group (n = 13) or the DBM group (n = 13). Repair was performed 8 weeks after complete transection of the right supraspinatus tendon of all rabbits. In the control group, RC repair was achieved by a standard transosseous technique. In the DBM group, RC repair was achieved using the same technique, and DBM was interposed between the cuff and bone. After 8 weeks, the RC tendon entheses from all rabbits were processed for gross and histologic examination. Results: On gross TB healing, 2 of 11 specimens in the control group were unhealed and no specimen was grossly unhealed in the DBM group (p = 0.421). In the control group, the tendon midsubstance was disorganized with randomly and loosely arranged collagen fibers and rounded fibroblastic nuclei. The TB interface was predominantly fibrous with small regions of fibrocartilage, especially mineralized fibrocartilage. In the DBM group, the tendon midsubstance appeared normal and comprised densely arranged collagen fibers, with orientated crimped collagen fibers running in the longitudinal direction of the tendon. These fibers were interspersed with elongated fibroblast nuclei. The TB interface consisted of organized collagen fibers with large quantities of fibrocartilage and mineralized fibrocartilage. Conclusions: The use of DBM for TB interface healing in rabbit experiments showed good results in gross and histologic analysis. However, it is difficult to draw a solid conclusion because the sample size is small. Further evaluation in the in vivo setting is necessary to determine clinical recommendations
InP에서의 Zn₃P₂ 박막 및 RTA법에 의한 Zn 확산의 특성
우용득(Yong-Deuk Woo) 한국진공학회(ASCT) 2004 Applied Science and Convergence Technology Vol.13 No.3
InP에서 열처리 온도와 시간 및 활성화 온도에 따른 Zn의 확산의 특성을 electrochemical capacitance-voltage 법으로 조사하였다. InP층은 metal organic chemical vapor deposition를 이용하여 성장하였으며, 확산방법으로는 Zn₃P₂ 확산원 박막과 rapid thermal annealing를 사용하였다. 최대의 정공 농도를 갖는 p-InP 층은 550 ℃에서 5분 동안 확산과 활성화를 한 시료에서 얻었고, Zn의 농도는 1×10^(19) ㎝-³이었다. 550 ℃에서 5+20 분 동안 확산을 수행한 결과 정공농도의 확산 깊이는 1.51㎛에서 3.23㎛로 이동하였고, Zn의 확산계수는 5.4×10^(-11) ㎠/sec이었다. 활성화 시간의 증가로, Zn가 더 깊게 확산하지만, 정공농도는 거의 변화가 없었다. 이는 도핑된 영역의 과잉의 침입형 Zn가 도핑되지 않은 영역으로 빠르게 확산하고 치환형 Zn로 변한다는 것을 의미한다. 정공농도는 SiO₂ 박막의 두께가 1,000Å 이상이어야 안정적으로 분포된다. Zn diffusions in InP have been studied by electrochemical capacitance voltage. The InP layer was grown by metal organic chemical vapor deposition, and Zn₃P₂ thin film was deposited on the epitaxial substrates. The samples annealed in a rapid thermal annealing. It is demonstrated that surface hole concentration as high as 1×10^(19) cm-³ can be achieved. When the Zn diffusion was carried at 550℃ and 5-20 min., the diffusion depth of hole concentration moves from 1.51 ㎛ to 3.23 ㎛, and the diffusion coefficient of Zn is 5.4×10^(-11) ㎠/sec. After activation, the concentration is two orders higher than that of untreated sample at 0.30 ㎠ depth. As the annealing time is increase, the hole concentration remains almost constant, except deep depth. It means that excess Zn interstitials exist in the doped region is rapidly diffusion into the undoped region and convert into substitutional when the thickness of SiO₂ thin film is above 1,000Å, the hole concentration becoms stable distribution.
흡착식 담수화 시스템의 성능에 증발 속도가 미치는 영향에 관한 실험적 연구
우성용(Seong-Yong Woo),송승우(Seung-Woo Song),김영득(Young-Deuk Kim) 대한기계학회 2017 대한기계학회 춘추학술대회 Vol.2017 No.11
Adsorption desalination (AD) system has been considered to be an environmentally-friendly and yet low-cost desalination technology that can produce two useful effects, i.e., high-grade fresh water and chilled water for cooling, using a low-temperature waste heat. In the AD process, it has been observed that a higher water evaporation rate in the evaporator results in a higher vapor pressure, which leads to an enhanced water uptake on the adsorbent, hence a better performance of AD system. Therefore, this study investigates the effect of evaporation rate on the performance of AD system by applying two types of liquid distributors (i.e., perforated plate and spray nozzle) to the falling film evaporator. The performance is evaluated over a wide range of operating conditions (heat source, chilled water, and cooling water temperatures) and assessed in terms of specific daily water production (SDWP) and specific cooling capacity (SCC).