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Zhou Ying,Tao Ke,Liu Aimin,Rui Jia,Bao Jianhui,Sun Yufeng,Yang Sanchuan,Wang Qinqin,Zhang Qiang,Yang Songbo,Cao Yujia,Qu Hui 한국물리학회 2020 Current Applied Physics Vol.20 No.7
In this paper, Tunnel Oxide Passivated Contact (TOPCon) silicon solar cells with the industrial area (244.32 cm2) are fabricated on N-type silicon substrates. Both the ultra-thin tunnel oxide layer and phosphorus doped polycrystalline silicon (polysilicon) thin film are prepared by the LPCVD system. The wrap-around of polysilicon is observed on the surface of borosilicate glass (BSG). The polysilicon wrap-around can form a leakage current path, thus degrades the shunt resistance of solar cells, and leads to the degradation of solar cell efficiency. Different methods are adopted to treat the polysilicon wrap-around and improve shunt resistance of solar cells. The experimental results indicate that a chemical etching method can effectively solve the problem of polysilicon wrap-around and improve the performance of solar cells. Finally, a conversion efficiency of 22.81% has been achieved by our bifacial TOPCon solar cells, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2 and FF of 81.62%.