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Trinh Thi Thanh THUY,Nguyen Thi BINH,Trinh Thi Thu HUONG,Nguyen Thu THUY,Dang Thanh PHUONG,Tran Thi Bao KHANH,Nguyen Thi YEN 한국유통과학회 2021 The Journal of Asian Finance, Economics and Busine Vol.8 No.11
The development of the ethnic minorities and mountainous areas (EMMA) is currently receiving the attention of countries around the world. This is demonstrated through a large number of studies, in many respects, in many different countries. The objective of the study is to find out the current situation of the commodity market in the ethnic minorities and mountainous areas (EMMA) of Vietnam. In particular, the authors will study whether there is a link between the ability to access governmental policies and the characteristics of this commodity market. To achieve the goal, the authors employed the secondary data collection method to gather the relevant information on government policies for EMMA and conducted an interview of seventy (70) enterprises in the Northern midlands and mountainous regions and the Central Coast to clarify the characteristics of commodity market. By Levene’s test, the results showed that the accessibility to governmental policies has a certain influence on the development of the commodity market patterns in the EMMA in terms of diversification of distribution forms and sales method of the business. These findings brought some basic solutions to further enhance the role of the government in developing commodity markets in the EMMA of Vietnam.
Kim, Sangho,Dao, Vinh Ai,Trinh, Thanh Thuy,Duy Phong, Pham,Park, Jinjoo,Thi Hanh Thu, Vu,Thuy Ngoc Thuy, Nguyen,Thi Thanh Giang, Ngo,Lee, Sunhwa,Yi, Junsin Institute of Physics 2019 Semiconductor science and technology Vol.34 No.6
<P>In this study, a recorded high open-circuit voltage (V<SUB>oc</SUB>) of 1.61 V and fill factor (FF) of 76.65% of a-Si:H p-i-n/heterojunction with intrinsic thin layer (HIT)-type multi-junction solar cells were achieved using grain size enlargement within the p-type <I>μ</I>c-Si:H layer in a p-type <I>μ</I>c-Si:H/n-type a-Si:H tunneling recombination junction (TRJ) layer. The p-type <I>μ</I>c-Si:H layer’s conductivity increased from 1.74?×?10<SUP>−4</SUP> to 0.1 S cm<SUP>−1</SUP> as the film’s crystallinity increased from 41.5% to 67.5%. The a-Si:H p-i-n/HIT-type multi-junction solar cells also benefited from the tuning up crystalline p-type <I>μ</I>c-Si:H layer, showing the increase of V<SUB>oc</SUB> and FF from 1.5 V and 49.88% to 1.61 V and 76.65%, respectively; while the short-circuit current density (9.38?±?0.2 mA cm<SUP>−2</SUP>) did not change significantly. These are the highest V<SUB>oc</SUB> and FF values achieved in a-Si:H p-i-n/HIT-type multi-junction solar cells, recently. From dark current-voltage analysis, it was deduced that the enhanced crystalline films could assist in suppressing carrier interference in the TRJ layer, thus reduces electric field distortion and mitigates recombination in the device. In summary, an enhanced crystalline p-type <I>μ</I>c-Si:H layer could be a viable option for ensuring an excellent TRJ layer, thus achieved high efficiency of inorganic/c-Si tandem solar cells. Using optimal condition with crystallinity of 74.1%, the photovoltaic parameters of the device yield V<SUB>oc</SUB>, J<SUB>sc</SUB> and FF of 1.51 V, 13.01 mA cm<SUP>−2</SUP> and 71.45%, which in turned giving an efficiency of 14.04% for a-SiGe:H p-i-n/HIT-type tandem solar cell.</P>
( Thuy Duong Nguyen ),( Boi An Tran ),( Ke Oanh Vu ),( Anh Son Nguyen ),( Anh Truc Trinh ),( Gia Vu Pham ),( Thi Xuan Hang To ),( Thanh Thao Phan ) 한국부식방식학회(구 한국부식학회) 2020 Corrosion Science and Technology Vol.19 No.2
This work examined the corrosion protection performance of benzoate loaded hydrotalcite/graphene oxide (HT/GO-BZ) for carbon steel. HT/GO-BZ was fabricated by the co-precipitation method and characterized by infrared spectroscopy, X-ray diffraction, and scanning electronic microscopy. The corrosion inhibition action of HT/GO-BZ on carbon steel in 0.1 M NaCl solution was evaluated by electrochemical measurements. The benzoate content in HT/GO-BZ was determined by UV-Vis spectroscopy. Subsequently, the effect of HT/GO-BZ on the corrosion resistance of the water-based epoxy coating was investigated by the salt spray test. The obtained results demonstrated the intercalation of benzoate and GO in the hydrotalcite structure. The benzoate content in HT/GO-BZ was about 16%. The polarization curves of the carbon steel electrode revealed anodic corrosion inhibition activity of HT/GO-BZ and the inhibition efficiency was about 95.2% at a concentration of 3g/L. The GO present in HT/GO-BZ enhanced the inhibition effect of HT-BZ. The presence of HT/GO-BZ improved the corrosion resistance of the waterborne epoxy coating.
Thu Thuy Thai,Anh Truc Trinh,Gia Vu Pham,Thi Thanh Tam Pham,Hoan Nguyen Xuan 한국부식방식학회 2020 Corrosion Science and Technology Vol.19 No.1
In this paper, the efficiency and the inhibition mechanisms of cobalt salts (cobalt nitrate and cobalt-exchangesilica Co/Si) for the corrosion protection of AA2024 were investigated in a neutral aqueous solution byusing the electrochemical impedance spectroscopy (EIS) and polarization curves. The experimental measurementssuggest that cobalt cation plays a role as a cathodic inhibitor. The efficiency of cobalt cation was importantat the concentration range from 0.001 to 0.01 M. The formation of precipitates of oxides/hydroxides ofcobalt on the surface at low inhibitor concentration was confirmed by the Scanning Electron Microscopy/EnergyDispersive X-Ray Spectroscopy (SEM/EDS) analysis. EIS measurements were also conducted for the AA2024surface covered by water-based epoxy coating comprising Co/Si salt. The results obtained from exposurein the electrolyte demonstrated the improvement of the barrier and inhibition properties of the coating exposedin the electrolyte solution for a lengthy time. The SEM/EDS analysis in artificial scribes of the coatingafter salt spray testing revealed the release of cobalt cations in the coating defect to induce the barrierlayer on the exposed AA2024 substrate.
Thu Thuy Thai,Anh Truc Trinh,Thi Thanh Tam Pham,Hoan Nguyen Xuan 한국부식방식학회 2023 Corrosion Science and Technology Vol.22 No.2
In this study, cobalt oxide (Co3O4) and cobalt-doped magnetite (CoFe2O4) nanoparticles were synthesizedby a hydrothermal method. They were then used as corrosion inhibitors for corrosion protection ofAA2024-T3 aluminum alloys. These obtained nanoparticles were characterized by x-ray diffraction, fieldemissionscanning electron microscopy, and Zeta potential measurements. Corrosion inhibition activities ofCo3O4 and CoFe2O4 nanoparticles were determined by performing electrochemical measurements for bareAA2024-T3 aluminum alloys in 0.05 M NaCl + 0.1 M Na2SO4 solution containing Co3O4 or CoFe2O4nanoparticles. Corrosion protection for AA2024-T3 aluminum alloys by a water-based epoxy with or withoutthe synthesized Co3O4 or CoFe2O4 nanoparticles was investigated by electrochemical impedance spectroscopyduring immersion in 0.1 M NaCl solution. The corrosion protection of epoxy coating depositedon the AA2024-T3 surface was improved by incorporating Co3O4 or CoFe2O4 nanoparticles in the coating. The corrosion protection performance of the epoxy coating containing CoFe2O4 was higher than that of theepoxy coating containing Co3O4.
Nguyen, Cam Phu Thi,Trinh, Thanh Thuy,Dao, Vinh Ai,Raja, Jayapal,Jang, Kyungsoo,Le, Tuan Anh Huy,Iftiquar, S M,Yi, Junsin Institute of Physics 2013 Semiconductor science and technology Vol.28 No.10
<P>Indium tin zinc oxide (ITZO)-based thin-film transistors (TFTs) were fabricated by dc magnetron sputtering in Ar + O<SUB>2</SUB> reactive gas, at room temperature. We present the effect of post-deposition annealing of ITZO thin films on the oxygen vacancies and on the characteristics of TFT devices. When the annealing temperature was increased from room temperature to 350 °C, the resistivity of ITZO film increased from 2.05 × 10<SUP>1</SUP> to 2.60 × 10<SUP>3</SUP> Ω cm and the interface trap density (<I>N</I><SUB>t</SUB>) of the TFTs reduced from 3.18 × 10<SUP>13</SUP> to 4.83 × 10<SUP>11</SUP> cm<SUP>−2</SUP>. The TFT with the ITZO film which was annealed at 350 °C showed a very small shift in turn-on voltage, even after applying positive bias stress of +12 V for 10<SUP>4</SUP> s. The current–voltage characteristics of 350 °C annealing temperature sample indicated that these TFTs were in an enhanced mode of transistor operation with a high on-to-off current ratio of ∼1.26 × 10<SUP>6</SUP>, high field-effect mobility of 14.17 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>, and low subthreshold slope of 1.23 V/dec. The trapping time reduced from 3720 to 1546 s as the annealing temperature increased from room temperature to 350 °C. These results suggest that thermal annealing played an important role in reducing defects as well as improvement in stability of the TFTs.</P>
Fabrication of ZnO nanorods for gas sensing applications using hydrothermal method.
Nguyen, Cam Phu Thi,La, Phan Phuong Ha,Trinh, Thanh Thuy,Le, Tuan Anh Huy,Bong, Sungjae,Jang, Kyungsoo,Ahn, Shihyun,Yi, Junsin American Scientific Publishers 2014 Journal of nanoscience and nanotechnology Vol.14 No.8
<P>We showed well-aligned zinc oxide (ZnO) nanorod arrays synthesized using hydrothermal method at atmospheric pressure. The influence of fabrication conditions such as Zn2+/hexamethylentriamin concentration ratio, and growth temperature on the formation of ZnO nanorods was investigated. Scanning Electron Microscope (SEM) images and X-ray Diffraction (XRD) analysis were used to confirm the single crystal of ZnO nanorods, which showed wurtzite structure with growth direction of [0001] (the c-axis). Photoluminescence (PL) measurements of ZnO nanorods revealed an intense ultraviolet peak at 388.5 nm (3.19 eV) at room temperature. The results showed that the ZnO seed layers had strong influence on the growth of vertically aligned ZnO nanorods. The gas sensor based on ZnO nanorod arrays had the most selectivity with n-butanol gas (within 2 surveyed gas: ethanol and n-butanol) and showed a higher sensitivity of 222, fast response time of 15 seconds, recovery time of 110 seconds and lower operating temperature of 200-250 C than the sensor based on the ZnO film in the same detecting conditions.</P>
Kim, Jiwoong,Jang, Kyungsoo,Phu, Nguyen Thi Cam,Trinh, Thanh Thuy,Raja, Jayapal,Kim, Taeyong,Cho, Jaehyun,Kim, Sangho,Park, Jinjoo,Jung, Junhee American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.5
<P>Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONOn) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONOn stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe: H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe: H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe: H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si: H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content.</P>
Loc Quang Do,Ha Tran Thi Thuy,Tung Thanh Bui,Van Thanh Dau,Ngoc-Viet Nguyen,Trinh Chu Duc,Chun-Ping Jen 한국바이오칩학회 2018 BioChip Journal Vol.12 No.2
The manipulation and detection of rare cells are important for many applications in early disease diagnosis and medicine. This study presents a dielectrophoresis (DEP) microfluidic enrichment platform combined with a built-in capacitive sensor for circulating tumor cell detection. The microchip is composed of a lollipop-shaped gold microelectrode structure under a polydimethylsiloxane chamber. A prototype of the device was fabricated using standard micromachining technology. With the proposed device, target cells (in this study, A549 non-small human lung carcinoma and S-180 sarcoma cell lines) are firstly guided toward the center of the working chamber via DEP forces. Then, the target cells are captured by an electrode immobilized by anti-EGFR, which has high affinity toward the target cells. After the cell concentration process, the differential capacitance is read to detect the presence of the target cells. Numerical simulations and measurement experiments were performed to demonstrate the high sensitivity of differential capacitive sensing. The obtained results show high sensitivity for S-180 cell detection (3 mV/cell). The proposed platform is suitable for rapid cancer diagnoses and other metabolic disease applications.