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백영희,남태철 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1
Generally, The Magnetic field sensor which is made of silicon has not good sensitivity. so we make a potential barrier along the edges of the emitter , which prevents a useless current that flows parallel to the chip surface and limits the current that is used for sensing magnetic field to the chip surface perpendicularly. The Magnetic field sensor used for this experiment is a magnetotransistor that is fabricated by standard CMOS technology. we measure the variation of the sensitivity according to the variation of the magnetic field and under the uniform magnetic field, measure the variation of the sensitivity according to the variation of the base current and the variation of the voltage that is applied substrate, measure the variation the of the sensitivity according to the variation of the reverse voltage applied the P^(+) stripe with respect to the emitter, we also measure the dependence of the temperature.
남명우,홍미란,남태철 ( Myungwoo Nam,Meeran Hong,Taechul Nam ) 한국센서학회 1996 센서학회지 Vol.5 No.2
We have fabricated the vacuum magnetic sensor with a lateral field emitter arrays constructed on n-Si substrate, and investigated its magnetic chracteristics. The device consists of 100 field-emitter tips with a 10 fan pitch, gate, and split-anodes which are laterally structured. `the electron-emission characteristics from the emitter followed the Fowler-Nordheim tunnelling theory. `The sensor has good linear characteristics and high sensitivity of 825 %/T.