http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
고착협 내탈립 기계수확 적응 장류⋅두부용 콩 품종 ‘새금’
김현태(Hyun Tae Kim),한원영(Won Young Han),이병원(Byung Won Lee),고종민(Jong Min Ko),이영훈(Yeong Hoon Lee),백인열(In Youl Baek),윤홍태(Hong Tai Yun),하태정(Tae Joung Ha),최만수(Man Soo Choi),강범규(Beom Kyu Kang),김현영(Hyun Yeong K 한국육종학회 2019 한국육종학회지 Vol.51 No.4
The soybean cultivar, ‘Saegeum’, has been developed for preparing soy-paste and tofu. The soybean cultivars ‘Daepung’ and ‘SS98207-3SSD-168’ were crossed in 2003 to obtain ‘Saegeum’. Single seed descent method was used to advance the generation from F3 to F5, and the plant lines with promising traits were selected from F6 to F7 by pedigree method. The preliminary yield (PYT) and advanced yield trials (AYT) were conducted from 2009 to 2010, and the regional yield trial (RYT) was conducted in 12 regions between 2011 and 2013. The morphological characteristics of ‘Saegeum’ were as follows: determinate plant type, white flower, tawny pubescence color, and brown pod color. Flowering and maturity dates were August 2, XXXX and October 17, XXXX, respectively. Plant height, first pod height, number of nodes, number of branches, and number of pods were 79 cm, 18 cm, 16, 2.3, and 44, respectively. The seed characteristics of ‘Saegeum’ were as follows: yellow spherical shape, yellow hilum, and the 100-seed weight was 25.4 g. ‘Saegeum’ was resistant to bacterial pustule and SMV in the field test, and its lodging resistance was mildly strong, whereas its shattering resistance was excellent. The ability of this cultivar to be processed into tofu, soybean malt, and other fermented products was comparable with that of ‘Daewonkong’. The yield of ‘Saegeum’ in the adaptable regions was 3.02 ton ha-1. Thus, ‘Saegeum’ is adaptable to mechanized harvesting because of its high first pod height, as well as lodging and shattering resistance. (Registration number: 5929)
하태열,이기광,정종윤 창원대학교 체육과학연구소 2002 경남 체육연구 Vol.7 No.2
중·고 필드 하키선수들에게 발생하는 스포츠 상해 유형을 규명하기 위하여 2000년 제1회 중·고 연맹 회장기 대회에 참가한 남·여 하키 선수 434명을 대상으로 한 설문 조사를 분석한 결과 다음과 같은 결론을 얻었다. 첫째, 상해 빈도는 신체 부위별로 다리, 팔, 머리, 몸통 순으로 나타났다. 남·여별로는 다리부위에서는 여자, 상지부위에서는 남자가 부상 빈도가 높게 나타났다. 학교별로는 팔, 다리 부위의 부상빈도에 있어서 고등학교가 중학교보다 높게 나타났다. 위치별로는 GK가 다른 위치의 선수들보다 상대적으로 팔부위의 부상 빈도는 높고 다리 부위의 부상 빈도는 낮은 것으로 나타났다. 둘째, 상해 증상에 있어서는 피부와 근육상해가 뼈와 관절 상해 빈도의 약 3~4배 정도로 높게 나타났다. 위치별로는 유의한 차이가 나타나지 않았으나. 남자와 고등학교가 여자와 중학교에 비해서 피부와 근 상해의 빈도가 높은 것으로 나타났다. 셋째, 상해 이유에 있어서 본인 부주의에 의한 상해원인은 남자는 지나친 승부욕, 여자는 정신력 부족이 가장 높게 나타났으며, 고등학교는 과도한 연습, 중학교는 정신력부족이 가장 높게 나타났다. 시설결함에 의한 상해원인은 모두 장비 불량으로 인해 상해발생이 가장 높게 나타났으며, 장소부적응에 의한 상해원인에 있어서 모두 타구장 부적응에 의한 상해발생률이 가장 높은 것으로 나타났다.
n-CdS_(0.46)Se_(0.54)/p-Cu_92-x)S_(0.46)Se_(0.54) 이종접합 태양전지의 제작과 그 특성에 관한 연구
유상하,최승평,이상열,홍광준,서상석,김혜숙,전승룡,윤은희,문종대,신영진,정태수,신현길,김택성,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
승화방법에 의해 CdS_0.46Se_0.54 단결정을 성장하여 결정구조를 조사하고, Van der Pauw 방법으로 Hall effect를 측정하여 carrier density의 온도 의존성과 mobility의 온도 의존성을 조사하였다. 성장된 CdS_0.46Se_0.54 단결정을 치환반응하여 n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 이종접합 태양전지를 제작하였다. Spectral response, 전류-전압특성 및 전력변환 효율을 조사하여 그 결과로부터 개방전압은 0.48V, 단락 전류 밀도는 21mA/㎠, fill factor와 전력변환효율은 각각 0.75와 9.5%를 얻었다. CdS_0.46Se_0.54 single crystal was grown by a sublimation method. The crystal structure and the temperature dependence of carrier density and mobility of CdS_0.46Se_0.54 single crystal were studied. Heterojunction solar cells on n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 were fabricated by the substitution reaction. The spectral response, the J-U characteristics and the conversion efficiency of the n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells were studied. The open-cricuit voltage, short-circuit density, fill factor and conversion efficiency of n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells under 80mW/㎠ illumination were found to be 0.48V, 21mA/㎠, 0.75 and 9.5%, respectively.
류지열,박성현,최혁환,권태하 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The ZnO(zinc oxide) thin film sensors were manufactured by RF magnetron sputtering method and added up to 4 wt. % Al_(2)O_(3), 1 wt. % TiO_(2) and 0.2 wt. % V_(2)O_(5) on the basis of ZnO material for developing the high sensitive gas sensors which have practically moderate resistivity and the stability. They were also grown on heated SiO_(2)/Si substrates of 250 ℃ at a pressure of about 10 mTorr in the pure oxygon gas with a power of about 80 watts for 10 minutes. To manufacture the thin film of the more stable high sensitivity, the thin films were also annealed from 400 ℃ to 800 ℃ and the thin films which were annealed with 700℃ for 60 minutes in the pure oxygon gas exhibited a good properties. The thin film grown in this conditions exhibited the sensitivity of maximum 550 in TMA gas concentration 160 pμm and exhibited a good stability and excellent linearity.
박성현,류지열,최혁환,권태하 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
Pt/Ti heater for TMA gas sensor was fabricated by RF magnetron sputtering method. It was grown on heated Si substrates of 250 ℃ at a pressure of about 5 mTorr in the pure argon gas with RF power of about 140 watts. Pt and Ti target alternated at intervals of even 2 minutes for 30 minutes. The heater which was grown in the ratio of 1 to 1(Pt:Ti) exhibited initial(room temperature) resistance of 45 ohms and a power dissipation of 9.6 watts up to 300℃ heater temperature. The width of resistor variance(R_(T)/R_(O)) exhibited 1.65. We can conclude that heater which was grown in the ratio of 1 to 1(Pt:Ti) is useful as a heater for TMA gas sensor
박성현,최우창,김성우,류지열,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The microheaters with Si_(3)N_(4)(1500Å)/SiO_(2)(3000Å)/Si_(3)N_(4)( 1500Å) diaphragm were fabricated by thin film technology and silicon micromachining techniques. Pt and poly-Si(n+) materials were used as heater materials of microheater. Pt temperature sensor was fabricated to detect the temperature of microheaters. The thermal analysis including temperature distribution on diaphragm and power consumption of the microheater were executed by the FEM method and heat transfer equations. The power consumption of the Pt and poly-Si(n+) heaters were measured and compared to that of thermal analysis by FEM simulation.
최우창,김성우,류지열,박성현,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The ammonia gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigated the sensitivity and response time according to temperature variation and ammonia gas concentration. The sensors sputtered in oxygen atmosphere showed higher sensitivity than those sputtered in argon atmosphere. The Au(0.3 wt.%) doped-ZnO thin film sensors aged at 330 ℃ showed the maximum sensitivity of 28 and good response time at a working temperature of 250 ℃ and to 160 ppm ammonia gas. The Pt(0.1 wt.%) doped-ZnO thin film sensors showed the maximum sensitivity at a low working temperature of 200 ℃.
김성우,최우창,류지열,박성현,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The DMA(Dimethylamine) gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigated the sensitivity and response time according to temperature variation and DMA gas concentration. The ZnO-based thin film sensors sputtered in oxygen atmosphere showed higher sensitivity than those sputtered in argon atmosphere. The ZnO-based thin film sensors doped with Al_(2)O_(3), In_(2)O_(3) and V_(2)O_(5) and sputtered in oxygen atmosphere showed the maximum sensitivity of 218(working temperature, 250 ℃, DMA gas, 160 ppm) and speedy response time. The ZnO-based thin film sensors doped with Al_(2)O_(3), In_(2)O_(3), TiO_(2) and V_(2)O_(5), sputtered in oxygen atmosphere and aged at 330 ℃ showed the maximum sensitivity of 156(working temperature, 250 ℃, DMA gas, 160 ppm).