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Yoon, Kyung Sik,Stringfellow, G.B.,Huber, R.J. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
Two-dimensional numerical device simulations are performed for a 0.7 ㎛-gate Ga_(0 47)Inp_(0 53)As/InP high electron mobility transistor (HEMT) using a two-dimensional drift-diffustion transport model coupled with a thermionic emission model at the hetero junction interface It is predicted that maximum room temperature transconductance of the Ga_(0 47)Inp_(0 53)As/InP HEMT (436 mS/mm) is approximately 33% higher than that of the GaAs/Al_(0 3)Ga_(0 7)As HEMT (328 mS/mm). This high tranconductance is attributed mainly to the superior electron transport properties of an undoped Ga_(0 47)Inp_(0 53)As/InP layer m the modulation doped heterostructure.
Chemical Beam Epitaxial Growth of InP and GaP by Using Tertiarybutylbis (Dimethylamino) Phosphine
류혁현,Cho-Rong Kim,Gerald Stringfellow,Jaeyeop Lee,Jae-Young Leem,Laurence Sadwick 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III
We report the growth of indium phosphide (InP) by using a chemical beam epitaxy (CBE) technique with the group V source tertiarybutylbis (dimethylamino) phosphine (TBBDMAP). The photoluminescence spectra at 15 K showed that the intensity of a peak attributed to impurity recombination and the FWHM increased significantly when the cracker temperature exceed 545 $^\circ$C. This paper also reports the growth of GaP without precracking of the TBBDMAP source. While it was not possible to grow InP at 450 $^\circ$C, GaP was successfully grown at temperatures as low as 410 $^\circ$C, possibly due to the higher Ga-P bond strength which gives a longer TBBDMAP residence time on the surface before desorption. In this study, ethyldimethylindium (EDMIn) and triisopropylgallium (TlPGa) were used as the indium (In) and the gallium (Ga) sources, respectively.
성태연,G. R. Booker,A. G. Norman,F. Glas,G. B. Stringfellow 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.2
We have investigated the modulated structures and its associated diffracted diffuse intensity, of organometallic vapor phase epitaxially grown GaPSb (001) layers by using transmission electron microscopy (TEM) and transmission electron diffraction (TED). The TEM results reveal the co-existence of a fine-scale modulated contrast and a fine-scale speckled contrast. In addition, a fine needle-like contrast is observed. The [001] TED results show lines of [110]-oriented diffuse intensity diffuse streaks passing through the fundamental reflections, satellite spots at 1/4g[220] positions, and a [010]-oriented diffuse intensity with spacing of 1/6g[040]. Simulations using the Valence Force Field model were performed to understand the origin of the diffracted features. The observed distributions of diffuse intensity are shown to be partially consistent with random disorder. Furthermore, the [110]-oriented diffuse lines are attributed to a static displacement of the sites of the mixed sublattices.