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Al의 열산화 방법을 이용한 AlGaN/GaN 구조의 표면 Al<sub>2</sub>O<sub>3</sub> 패시베이션 효과
김정진,안호균,배성범,박영락,임종원,문재경,고상춘,심규환,양전욱,Kim, Jeong-Jin,Ahn, Ho-Kyun,Bae, Seong-Bum,Pak, Young-Rak,Lim, Jong-Won,Moon, Jae-Kyung,Ko, Sang-Chun,Shim, Kyu-Hwan,Yang, Jeon-Wook 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.11
Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.