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Sanam SaeidNahaie,Samad Roshan Entezar,Hamid Naghshara,Hyun Jun Jo,Jong Su Kim,김영호,이상준 한국물리학회 2020 Current Applied Physics Vol.20 No.1
The incident light intensity (Iex) effects on a GaAs single junction solar cell (SC) was investigated using bright electroreflectance spectroscopy (BER) and current-voltage (J-V) measurements at room temperature. The p-n junction electric field (Fpn) of the SC was evaluated by analyzing the Franz Keyldesh oscillation (FKO) in the BER spectra. The Iex effect on Fpn was investigated at various incident light intensities from 0.03 to 25 suns. The Fpn decreased gradually with increasing Iex due to the photovoltaic effect. For the forward bias voltage, some part of the electrons and holes drifted to the p and n sides, respectively, and produced the induced electric field in the same direction of the Fpn. Therefore, the Fpn increased up to 2.5 suns. At more than 2.5 suns, most of the electrons and holes moved to the n and p sides and decreased the Fpn due to the photovoltaic effect. In addition, the Fpn was examined under light illumination as a function of different DC bias voltages (−0.2–0.4 V). The Fpn decreased with increasing bias voltage due to the decrease in potential barrier. The Fpn increased with increasing bias voltage due to the decrease in the photogenerated carrier-induced electric field for high Iex.
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이상조,Sanam SaeidNahaie,김준오,이상준,김종수 한국진공학회 2019 Applied Science and Convergence Technology Vol.28 No.3
The purpose of this study is twofold: (1) to grow undoped-GaSb epitaxial structure on a high concentration n+-GaSb substrate by molecular beam epitaxy and (2) to analyze the grown undoped-GaSb epitaxial structure through photoreflectance (PR) measurements. PR spectrum analysis of the undoped- GaSb epitaxial layer at room temperature shows three notable features. First, in the region above the fundamental band gap Eg, the Franz-Keldysh oscillation (FKO) makes the PR signals oscillate. Second, low electric field PR is observed near Eg. Third, low energetic interference oscillations (LEIOs) occur in the region below the bandgap. An electric field is formed on the surface of the undoped-GaSb layer (i.e., in the interface between the undoped-GaSb and air); by using the FKO component, the calculated magnitude is 70 kV/cm at a growth temperature of 485 °C. In addition, the analysis of the FKO and low electric field PR data indicate a fundamental band gap Eg of 0.723 eV. The thickness of the undoped- GaSb epi-layer, calculated using the LEIO PR spectrum, is 1040 nm.
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