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Abernathy, C.R.,Gila, B.P.,Onstine, A.H.,Pearton, S.J.,Kim, Ji-Hyun,Luo, B.,Mehandru, R.,Ren, F.,Gillespie, J.K.,Fitch, R.C.,Seweel, J.,Dettmer, R.,Via, G.D.,Crespo, A.,Jenkins, T.J.,Irokawa, Y. The Institute of Electronics and Information Engin 2003 Journal of semiconductor technology and science Vol.3 No.1
Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.