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RISS 인기검색어
- 검색키워드
- 저자 : Masayuki Tanigawa (검색결과 3 건)
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New emission band of PtOEP phosphor in organic LED devices
Taiju Tsuboi,Masayuki Tanigawa,Shin Kawami,Taishi Tsuji 한국물리학회 2005 Current Applied Physics Vol.5 No.1
Electroluminescence (EL) and transient EL response have been studied on organic light-emitting diode (OLED) devices based onphosphorescent PtOEP molecule. As the emitting layer, we used layer of PtOEP doped in CBP host material and layer formed by100%PtOEP (without doping in host). Three EL bands are observed at 500, 527 and 570 nm in the latter device besides red EL dueto PtOEP. The 500 and 527 nm ELs are attributed to emission from hole- and electron-transport layers, respectively, while the 570nm EL to emission from exciplex formed at the interface between the hole-blocking layer and emitting layer. Weak emission fromthe thermally populated triplet state is observed in single layer OLED device with 100%PtOEP layer and multi-layer device withPtOEP doped in host. Double exponential decay is observed in the electrophoresecence in the 100%PtOEP layer device, while asingle exponential decay is observed in the device with PtOEP doped in host.
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Organic LED device based on PtOEP phosphor without dopingin host material
Taiju Tsuboi,Masayuki Tanigawa,Shin Kawami,Taishi Tsuji 한국물리학회 2005 Current Applied Physics Vol.5 No.6
Electroluminescence (EL) and photoluminescence (PL) have been studied on multi-layer organic light-emitting diode (OLED)devices based on phosphorescent platinum octaethyl porphine (PtOEP) molecule. A multi-layer OLED (called Pt5) which has100% PtOEP without doping in host as the emitting layer is investigated and compared its EL and PL characteristics with thoseof the other OLEDs (Pt2 and Pt3) with emitting layer of PtOEP doped in 4,40-N,N0-dicarbazole-biphenyl (CBP) host material. Itis observed that Pt5 shows a lower EL eciency than Pt2 and Pt3. Three broad EL bands are observed at 500, 527 and 570nmin the multi-layer device in addition to red sharp EL band due to PtOEP in Pt5, while only the red PtOEP EL is observed inPt2 and Pt3. The 500, 527 and 570nm EL peaks arise from absorption of the broad 525nm Alq3 emission band by PtOEP layer.The emission from the Alq3 electron-transport layer is caused by the carrier leakage from the hole-blocking BAlq layer. The inten-sity of red EL due to PtOEP is much weaker in Pt5 than in Pt2. Taking into account the result of PL, it is suggested that highlyecient energy transfer from CBP host to PtOEP guest occurs in Pt2 and Pt3, giving rise to higher PtOEP luminance, while con-centration quenching occurs in PtOEP layer in Pt5..
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Low Cost PLD with High Speed Partial Reconfiguration
Naoki Hirakawa,Masanori Yoshihara,Masayuki Sato,Kazuya Tanigawa,Tetsuo Hironaka 대한전자공학회 2008 ITC-CSCC :International Technical Conference on Ci Vol.2008 No.7
Recently, Field Programmable Gate Arrays (FPGAs) have been used for implementing various types of logic functions. But the conventional FPGAs have the following problems. The conventional FPGAs include switch matrixes for programmable connection, but the switch matrix occupies a significantly large area of the FPGA. As another problem, the configuration speed is slow because of the serial configuration method. To resolve these problems, we proposed MPLD as a new Programmable Logic Device (PLD) architecture which introduce MLUT instead of the conventional LUT. In MPLD each MLUT can be used as a combination logic, memory and switch matrix, on the demand of the mapped circuit. The merits of MPLD are the following. 1) MPLD can behave as both the reconfigurable device and the conventional parallel memory. 2) Implementing cost of MPLD is cheaper than the conventional FPGAs, because MPLD does not need switch matrixes as the conventional FPGA does. 3) The configuration speed is fast and partial configuration is easy because configuration method of MPLD is same as write access of the conventional parallel memory. In this paper, we present the MPLD architecture and its evaluation results of the prototype MPLD chip.
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