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A Molecular Dynamics Study of the Deposition and the Diffusion Behaviors of Al on a Cu Surface
김상필,K.-R. Lee,김영근,정용재,M. Doi,M. Sahashi 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.4
The deposition and the diffusion behaviors of Al atoms on Cu surfaces of various orientations were investigated by using classical molecular dynamics simulations and molecular static calculations. Al atoms with a kinetic energy of 0.1 eV were deposited at room temperature. On the Cu(001) surface, the deposited Al atoms tend to agglomerate only with adjacent atoms. In the case of the Cu(111) surface, surface diffusion of Al atoms is significant even as a time scale between two consecutive depositions (5 ps). Most deposited atoms are, thus, agglomerated near the surface step. In contrast, Al atoms deposited on Cu(011) hardly diffuse on the surfaces but intermix with the Cu atoms, resulting in an atomistically rough interface. These behaviors are consistent with changes in the activation barrier for a possible kinetic process that depends on the orientation of the substrate.
Joon-Young Soh,Sang-Pil Kim,Young Keun Kim,Kwang-Ryeol Lee,Yong-Chae Chung,Kawasaki, S.,Miyake, K.,Doi, M.,Sahashi, M. IEEE 2006 IEEE transactions on magnetics Vol.42 No.10
<P>To understand the mechanism of current-confined-path formation for the current-perpendicular-to-plane type of giant magnetoresistive devices, we have investigated the evolution of an Al monolayer on the Cu (111) surface both by in situ scanning tunneling microscopy and by molecular dynamics simulation. Ultrathin Al nano-clusters were formed on the plateaus and step (or plateau) edges of the Cu surface in the as-deposited state. Upon annealing at 300degC, Al atoms migrated toward the step edges by surface diffusion. As a consequence, nanometer-sized Cu channels not covered by Al clusters can be formed. These channels could serve as current-confined paths if subsequent mild Al oxidation is provided</P>