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RISS 인기검색어
- 검색키워드
- 저자 : K. A. Prior (검색결과 5 건)
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Arran Curran,Russell J. Barbour,Jessica K. Morrod,Kevin A. Prior,Ajoy K. Kar,Richard J. Warburton 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
We report the observation of strong and weak exciton-photon coupling in a variety of ZnSe-based microcavities fabricated using epitaxial liftoff. Molecular-beam-epitaxy grown ZnSe/Zn0.9Cd0.1Se quantum wells with a one-wavelength optical length at the exciton emission were transferred to a SiO2/Ta2O5 mirror with a reflectance of 96 %. Three experiments are presented, evidencing strong exciton-photon coupling in both a fixed and tunable microcavity and lasing at room temperature in a monolithic device. We report the observation of strong and weak exciton-photon coupling in a variety of ZnSe-based microcavities fabricated using epitaxial liftoff. Molecular-beam-epitaxy grown ZnSe/Zn0.9Cd0.1Se quantum wells with a one-wavelength optical length at the exciton emission were transferred to a SiO2/Ta2O5 mirror with a reflectance of 96 %. Three experiments are presented, evidencing strong exciton-photon coupling in both a fixed and tunable microcavity and lasing at room temperature in a monolithic device.
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Optical and Magnetic Properties of MBE-Grown Manganese Sulfide Layers
W. Heimbrodt,L. Chen,H.-A. Krug Von Nidda,A. Loidl,P. J. Klar,L. David,K. A. Prior 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Metastable zinc-blende MnS layers of various thicknesses from 1:8 nm to 8:6 nm have been grown by molecular beam epitaxy on (100) GaAs between ZnSe cladding layers. We studied the dependences of the optical and the magnetic properties on the layer thickness. On the one hand, the non-exponential decay of the Mn internal transition is found to be faster for thick erlayer,which is a size effect and not caused by the interfaces. On the other hand, the Neel-temperature is not altered with decreasing layer thickness, but the phase-transition-induced shift of the internal Mn transitions is smaller for thinnerMnSlayers. Thisisexplainedbythedominatingin uenceofMn ions at the interface, which possess a reduced number of Mn neighbors. SQUID measurements in a weak external magnetic eld conrm the optical observations in zero field. However, applying a strong magnetic field reveals the metamagnetic character of these zinc-blende MnS layers. An antiferromagnetic-to-erromagnetic phase transitionis found with increasing external field. Metastable zinc-blende MnS layers of various thicknesses from 1:8 nm to 8:6 nm have been grown by molecular beam epitaxy on (100) GaAs between ZnSe cladding layers. We studied the dependences of the optical and the magnetic properties on the layer thickness. On the one hand, the non-exponential decay of the Mn internal transition is found to be faster for thick erlayer,which is a size effect and not caused by the interfaces. On the other hand, the Neel-temperature is not altered with decreasing layer thickness, but the phase-transition-induced shift of the internal Mn transitions is smaller for thinnerMnSlayers. Thisisexplainedbythedominatingin uenceofMn ions at the interface, which possess a reduced number of Mn neighbors. SQUID measurements in a weak external magnetic eld conrm the optical observations in zero field. However, applying a strong magnetic field reveals the metamagnetic character of these zinc-blende MnS layers. An antiferromagnetic-to-erromagnetic phase transitionis found with increasing external field.
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Growth and Characterization of ZnMgS and ZnMgS/ZnSe Quantum Wells grown on GaAs (100) by Using MBE
C. Bradford,R. T. Moug,A. Curran,D. Thuau,R. J. Warburton,K. A. Prior 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Structures containing Zn1-xMgxS have been grown lattice matched to GaAs by using molecular beam epitaxy (MBE) with ZnS as the source of S. The composition of the alloy produced has been determined using double-crystal X-ray spectroscopy and X-ray interference measurements. Both techniques indicate that 0.88 ≤ x ≤ 0.93. This result is conrmed by both secondary ion mass spectroscopy and an Auger analysis carried out on the material. These results show that the crystalline quality of the material produced is excellent and that it has been grown coherently to the GaAs substrate. Photoluminescence spectroscopy shows a high intensity emission with a narrow full width half maximum, confirming the suitability of this alloy as a high-bandgap barrier material. Structures containing Zn1-xMgxS have been grown lattice matched to GaAs by using molecular beam epitaxy (MBE) with ZnS as the source of S. The composition of the alloy produced has been determined using double-crystal X-ray spectroscopy and X-ray interference measurements. Both techniques indicate that 0.88 ≤ x ≤ 0.93. This result is conrmed by both secondary ion mass spectroscopy and an Auger analysis carried out on the material. These results show that the crystalline quality of the material produced is excellent and that it has been grown coherently to the GaAs substrate. Photoluminescence spectroscopy shows a high intensity emission with a narrow full width half maximum, confirming the suitability of this alloy as a high-bandgap barrier material.
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Micro-Raman Studies of Zincblende MgS
D Wolverson,L. C. Smith,C. Bradford,B. C. Cavenett,K. A. Prior 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Recent improvements in UV Raman spectrometer capability have resulted from the availability of much improved dielectric filters, and we can now observe directly both the longitudinal and the transverse optic phonon modes of the wide-bandgap zincblende semiconductor MgS. We are, thus, able to confirm the earlier measured and calculated phonon frequencies with improved accuracy. The strong sequence of overtone modes that we observe is interpreted in terms of the resonance behavior of the Raman scattering process at this excitation energy. The spectra also show features which, by comparison to ab-initio calculations of the phonon dispersion and density of states, can be identified as arising from multiple Raman scattering processes involving longitudinal acoustic phonons near the Brillouin zone boundary.
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