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Design and Trial Deployment of a Practical Sleep Activity Pattern Monitoring System
Jit Biswas,Maniyeri Jayachandran,Louis Shue,Kavitha Gopalakrishnan,Philip Yap 동국대학교 정보융합기술원 2009 International Journal of Assistive Robotics and Sy Vol.10 No.4
Sleep disorders are common in the elderly, can be distressing to both the elderly and their carers, and often contribute to institutionalisation when the disruptive night behaviour of the older person exerts its toll on the carer. The main way of determining Sleep Activity Pattern (SAP) and aberrant changes in the normal sleep/wake cycle is through verbal reports of the patient and his/her carer, information that can be subjective, incomplete and unreliable. An emerging modality for SAP monitoring is actigraphy1), involving the use of wearable sensors commonly based on accelerometers. To bring actigraphy to the next level in order to reap its benefit for the elderly population at large, one must consider its deployment in realistic settings such as nursing homes and in the homes of the subjects. In this paper we provide a brief account of the trial eployment of our SAP monitoring system in a nursing home, where data was collected from fifteen elderly residents for a period of two weeks each. Besides providing an objective basis for obtaining sleep related information from patients who are often unable to remember clearly how well they have slept, our system benefits staff and doctors by providing more accurate information as a supplement to the sleep diary, and hopefully even eliminate the need for the latter. Preliminary results are reported herein.
Jit, S.,Pandey, Prashant,Pal, B.B. The Institute of Electronics and Information Engin 2003 Journal of semiconductor technology and science Vol.3 No.4
A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.
Jit, S.,Pal, B.B. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.1
A simple analytical model has been presented for the study of the optical bistability using a $GaAs-Al_{0.32}Ga_{0.68}As$ multiple quantum well (MQW) p-i-n diode structure. The calculation of the optical absorption is based on a semi-emperical model which is accurately valid for a range of wells between 5 and 20 nm and the electric field F< 200kV/cm . The electric field dependent analytical expression for the responsivity is presented. An attempt has been made to derive the analytical relationship between the incident optical power ( $(P_{in})$ ) and the voltage V across the device when the diode is reverse biased by a power supply in series with a load resistor. The relationship between $P_{in}$ and $P_{out}$ (i.e. transmitted optical power) is also presented. Numerical results are presented for a typical case of well size $L_Z=10.5nm,\;barrier\;size\;L_B=9.5nm$ optical wave length l = 851.7nm and electric field F? 100kV/cm. It has been shown that for the values of $P_{in}$ within certain range, the device changes its state in such a way that corresponding to every value of $P_{in}$ , two stable states and one unstable state of V as well as of $P_{out}$ are obtained which shows the optically controlled bistable nature of the device.
Jit, S.,Morarka, Saurabh,Mishra, Saurabh The Institute of Electronics and Information Engin 2005 Journal of semiconductor technology and science Vol.5 No.3
A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.
S. Jit,Saurabh Morarka,Saurabh Mishra 대한전자공학회 2005 Journal of semiconductor technology and science Vol.5 No.3
A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET’s has been presented in this paper. The solution of the 2-D Poisson’s equation has been considered as the superposition of the solutions of 1-D Poisson’s equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.
Datta, Shuvo Jit,Yoon, Kyung Byung WILEY-VCH Verlag 2010 Angewandte Chemie Vol.49 No.29
<B>Graphic Abstract</B> <P>Vanadosilicate zeolite AM-6, which contains a 3D array of vanadate (V<SUP>IV</SUP>O<SUB>3</SUB><SUP>2−</SUP>) quantum wires (see picture), was prepared as high-quality crystals (free from V<SUP>V</SUP>, titanosilicate seeds, and pore-blocking organic template cations) from inexpensive V<SUB>2</SUB>O<SUB>5</SUB>. The linear dependence of λ<SUB>max</SUB> and band-gap energy E<SUB>g</SUB> on the partial charge on the framework O atoms reveal that the UV band of AM-6 is due to V<SUP>IV</SUP>-to-O metal-to-ligand charge transfer. <img src='wiley_img_2010/14337851-2010-49-29-ANIE200907088-content.gif' alt='wiley_img_2010/14337851-2010-49-29-ANIE200907088-content'> </P>
Datta, Shuvo Jit,Yoon, Kyung Byung WILEY-VCH Verlag 2010 Angewandte Chemie Vol.122 No.29
<B>Graphic Abstract</B> <P>Der Vanadosilicat-Zeolith AM-6 mit einer dreidimensionalen Anordnung von Vanadat(V<SUP>IV</SUP>O<SUB>3</SUB><SUP>2−</SUP>)-Quantendrähten (siehe Bild) wurde in Form hochwertiger Kristalle (frei von V<SUP>V</SUP>, Titanosilicat-Kristallkeimen und organischen Templatkationen in den Poren) aus preiswertem V<SUB>2</SUB>O<SUB>5</SUB> hergestellt. Die lineare Abhängigkeit von λ<SUB>max</SUB> und der Bandlückenenergie E<SUB>g</SUB> von der Partialladung der O-Atome zeigt, dass die UV-Bande von AM-6 auf einen Metall-Ligand-Ladungstransfer von V<SUP>IV</SUP> zu O zurückgeht. <img src='wiley_img_2010/00448249-2010-122-29-ANGE200907088-content.gif' alt='wiley_img_2010/00448249-2010-122-29-ANGE200907088-content'> </P>
mandeep singh jit singh,Kenji Tanaka,Mitsuyoshi 한국전자통신연구원 2007 ETRI Journal Vol.29 No.4
In this study, several methods to convert rain rate data for various time intervals to one-minute rates are compared. High-resolution tipping bucket precipitation records for seven locations in a tropical region are analyzed and compared using these conversion models. The Segal, Chebil, and Burgueno methods give the smallest average errors below 10% at different integration times.