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- 저자 : Jiro Nakamura (검색결과 4 건)
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Wireless Sensor Networks for Monitoring the Daily Interactions between User and Objects
Masayuki Nakamura,Masayuki Tsuda,Kazue Takahashi,Jiro Nakamura 제어로봇시스템학회 2009 제어로봇시스템학회 국제학술대회 논문집 Vol.2009 No.8
This article presents a hybrid system of wireless sensor networks and active tags in order to monitor user"sbehaviors of handling objects. The sensor networks consist of an acceleration sensor node that the user carries and occupancy sensor nodes that are deployed in a workplace. The active tags, which are embedded with switch sensors, vibration sensors and occupancy sensors, are attached to objects. The sensor networks capture the user"s movements andthe active tags detect the objects" movements. The sensor nodes have the parent selection function that can allocate resources to the nodes. We demonstrate monitoring the user"s behaviors of handling the objects using the hybrid system.We also show that the proposed system provides the useful information for behavior classification.
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Fabrication and EL Emission of ZnO-Based Heterojunction Light-Emitting Devices
Sandip Gangil,Atsushi Nakamura,Kenji Yamamoto,Toshiya Ohashi,Jiro Temmyo 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Nitrogen-doped p-type MgZnO films were successfully realized on a-plane sapphire substrates and were used in an n-MgyZn1-yO/n-Zn1-xCdxO/p-MgyZn1-yO:N/p-SiC heterojunction structure to act as barrier layer leading to sharpening of the electroluminescence (EL) in terms of reducing the full width at half maximum (FWHM). The X-ray photoelectron spectroscopy (XPS) analysis of the c-axis-oriented nitrogen-doped MgZnO film confirmed the presence of Mg2+ at 49.8 eV in Mg (2p region) in the ZnO:N lattice, replacing Zn2+. Zn-N formations were clearly visible in the Zn (2p3=2) region and the signal for nitrogen-replacing oxygen (NO) emerged at 396.9 eV. With respect to ZnO:N polar films (n-type in as-grown conditions), as-grown polar MgZnO:N films had the upper hand by holding a p-type nature due to Mg incorporation ascribed to the formation of Mg- related (interactions of Mg with N) tri-atomic acceptor-donor-acceptor-configured p-type supportive complexes. The nitride formations were noticeable in the X-ray diffraction (XRD) spectra. The formation of complexes and their effects are discussed in this paper. Nitrogen-doped p-type MgZnO films were successfully realized on a-plane sapphire substrates and were used in an n-MgyZn1-yO/n-Zn1-xCdxO/p-MgyZn1-yO:N/p-SiC heterojunction structure to act as barrier layer leading to sharpening of the electroluminescence (EL) in terms of reducing the full width at half maximum (FWHM). The X-ray photoelectron spectroscopy (XPS) analysis of the c-axis-oriented nitrogen-doped MgZnO film confirmed the presence of Mg2+ at 49.8 eV in Mg (2p region) in the ZnO:N lattice, replacing Zn2+. Zn-N formations were clearly visible in the Zn (2p3=2) region and the signal for nitrogen-replacing oxygen (NO) emerged at 396.9 eV. With respect to ZnO:N polar films (n-type in as-grown conditions), as-grown polar MgZnO:N films had the upper hand by holding a p-type nature due to Mg incorporation ascribed to the formation of Mg- related (interactions of Mg with N) tri-atomic acceptor-donor-acceptor-configured p-type supportive complexes. The nitride formations were noticeable in the X-ray diffraction (XRD) spectra. The formation of complexes and their effects are discussed in this paper.
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Electroluminescence from n-Zn(Mg,Cd)O/ p-4H-SiC:Al Heterojunctions
Kenji Yamamoto,Toshiya Ohashi,Atsushi Nakamura,Temmyo Jiro 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Electroluminescence (EL) from n-Mg0:18Zn0:82O/ n-Zn(Mg,Cd)O/ p-4H-SiC:Al heterojunction diodes fabricated by using remote-plasma-enhanced metal-organic chemical-vapor deposition was measured to investigate some recombination processes of hole injection by changing the bandgap of n-Zn(Mg,Cd)O. EL emissions from the heterojunction utilizing n-Zn1-xCdxO (x > 0.07) were observed to coincide with the photoluminescence (PL) emission energy of the corresponding alloy content due to hole injection from the p-4H-SiC:Al to the n-Zn1-xCdxO layer in the type-I het-erojunctions. However, broad EL emissions from the type-II heterojunctions utilizing n-ZnO and n-Mg0:12Zn0:88O were observed at around 2.8 eV. These broad ELs were caused by the recombination of carriers in p-4H-SiC:Al due to electron injection from n-Zn(Mg,Cd)O to p-4H-SiC:Al and by the recombination of spatially separated carriers at the heterointerface.
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