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      • KCI등재

        In uence of In dopant on PL Spectra of CdZnTe Crystals

        Jianyong Teng,Wenbin Sang,Gang Li,Zhubin Shi,Jiahua Min,Dongni Hu,Yongbiao Qian 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1

        Photoluminescence (PL) spectra are used to characterize the high resistivity of an In-doped CdZnTe (CZT) crystal. The features of the PL spectra vary with changing In-dopant concentration, indicating that the In-dopant concentration has a great impact on the defect type and density and on the extent of compensation in the In-doped CZT crystal. With the addition of In donors, a new sharp neutral donor bound exciton [D0, X] peak at 1.65 eV, corresponding to In substituting defect (In+ Cd) and a new defect complex band centered at 1.505 eV, related to the singly negative complex (VCd-InCd)- are observed. Meanwhile, the intensity and position of the feature peaks in PL spectra vary with the change of the In dopant concentration, representing the changes of the defect type and density and the extent of compensation in the crystal. It conrms that the Cd vacancy or residual impurity acceptors are dominantly compensated by In donors. The measured conduction type and carrier densities are the results of compensation between Cd vacancies and In donors and Te antisites, which are related to the In-dopant concentration and the stoichiometry for the CZT crystal. Photoluminescence (PL) spectra are used to characterize the high resistivity of an In-doped CdZnTe (CZT) crystal. The features of the PL spectra vary with changing In-dopant concentration, indicating that the In-dopant concentration has a great impact on the defect type and density and on the extent of compensation in the In-doped CZT crystal. With the addition of In donors, a new sharp neutral donor bound exciton [D0, X] peak at 1.65 eV, corresponding to In substituting defect (In+ Cd) and a new defect complex band centered at 1.505 eV, related to the singly negative complex (VCd-InCd)- are observed. Meanwhile, the intensity and position of the feature peaks in PL spectra vary with the change of the In dopant concentration, representing the changes of the defect type and density and the extent of compensation in the crystal. It conrms that the Cd vacancy or residual impurity acceptors are dominantly compensated by In donors. The measured conduction type and carrier densities are the results of compensation between Cd vacancies and In donors and Te antisites, which are related to the In-dopant concentration and the stoichiometry for the CZT crystal.

      • KCI등재

        Stress-strain Behaviour and Shear Strength of Municipal Solid Waste (MSW)

        Xiulei Li,Jianyong Shi 대한토목학회 2016 KSCE JOURNAL OF CIVIL ENGINEERING Vol.20 No.5

        An understanding of the stress-strain behaviour of Municipal Solid Waste (MSW) is important in landfill design and stability analysis of landfill slopes. A series of triaxial compression tests were carried out on reconstituted MSW specimens. The effect of stress path on the drained stress-strain response and shear strength of MSW were investigated. For the compression stress paths of Δσ3 ≥0, a straight-lined increase section and an upward curvature are observed in the stress-strain curves of MSW; the upward curvature results from the fibrous constituents (primarily plastic and paper) reinforcing the waste matrix; the hardening points defined in stress-strain curves are used as failure criterion to calculate the strength parameters of MSW. For the compression stress paths of Δσ3 < 0, the stress-strain responses of MSW exhibit a rapidly increasing section towards a slowly increasing section without upward curvature; the development of fibrous reinforcement is not enough due to the reduction of confining stress σ3; the failure points defined in stress-strain curves are also used as failure criterion to calculate the strength parameters of MSW. A new method to estimate MSW strength parameters is proposed in this study. The differences of MSW friction angle are very small for different stress path tests. However, the cohesions obtained in compression stress path tests of Δσ3 < 0 are much smaller than that in conventional triaxial compression tests.

      • SCIESCOPUSKCI등재

        Recent progress (2015e2020) in the investigation of the pharmacological effects and mechanisms of ginsenoside Rb₁, a main active ingredient in Panax ginseng Meyer

        Zuan Lin,Rongfang Xie,Chenhui Zhong,Jianyong Huang,Peiying Shi,Hong Yao 고려인삼학회 2022 Journal of Ginseng Research Vol.46 No.1

        Ginsenoside Rb1 (Rb1), one of the most important ingredients in Panax ginseng Meyer, has been confirmed to have favorable activities, including reducing antioxidative stress, inhibiting inflammation, regulating cell autophagy and apoptosis, affecting sugar and lipid metabolism, and regulating various cytokines. This study reviewed the recent progress on the pharmacological effects and mechanisms of Rb1 against cardiovascular and nervous system diseases, diabetes, and their complications, especially those related to neurodegenerative diseases, myocardial ischemia, hypoxia injury, and traumatic brain injury. This review retrieved articles from PubMed and Web of Science that were published from 2015 to 2020. The molecular targets or pathways of the effects of Rb1 on these diseases are referring to HMGB1, GLUT4, 11b-HSD1, ERK, Akt, Notch, NF-kB, MAPK, PPAR-g, TGF-b1/Smad pathway, PI3K/mTOR pathway, Nrf2/HO-1 pathway, Nrf2/ARE pathway, and MAPK/NF-kB pathway. The potential effects of Rb1 and its possible mechanisms against diseases were further predicted via Kyoto Encyclopedia of Genes and Genomes (KEGG) pathway and disease ontology semantic and enrichment (DOSE) analyses with the reported targets. This study provides insights into the therapeutic effects of Rb1 and its mechanisms against diseases, which is expected to help in promoting the drug development of Rb1 and its clinical applications.

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