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Research and Development Plan of Space Optics Based on Optical Technology
Young-Soo Kim(김영수),Dohoon Kim(김도훈),Changhee Lee(이창희),JaeYeong Jo(조재영),Sung In Woo(우성인),Dan Seo Koo(구단서),Gyu Sik Kim(김규식),Jae Hee Byun(변재희),Junghun Ryou(유정훈),Dong Geun Kim(김동균),Hyun Il Cho(조현일) 한국항공우주학회 2023 한국항공우주학회 학술발표회 논문집 Vol.2023 No.6
Photobias Instability of High Performance Solution Processed Amorphous Zinc Tin Oxide Transistors
Kim, Yoon Jang,Yang, Bong Seob,Oh, Seungha,Han, Sang Jin,Lee, Hong Woo,Heo, Jaeyeong,Jeong, Jae Kyeong,Kim, Hyeong Joon American Chemical Society 2013 ACS APPLIED MATERIALS & INTERFACES Vol.5 No.8
<P>The effects of the annealing temperature on the structural and chemical properties of soluble-processed zinc–tin–oxide (ZTO) films were examined by transmission electron microscopy, atomic force microscopy, high resolution X-ray reflectivity, and X-ray photoelectron spectroscopy. The density and purity of the resulting ZTO channel layer increased with increasing annealing temperature, whereas the oxygen vacancy defect density decreased. As a result, the device performance of soluble ZTO thin film transistors (TFTs) was improved at higher annealing temperature. Although the 300 °C-annealed ZTO TFT showed a marginal field-effect mobility <I>(μ</I><SUB>FE</SUB>) and high threshold voltage (<I>V</I><SUB>th</SUB>) of 0.1 cm<SUP>2</SUP>/(V s) and 7.3 V, respectively, the 500 °C-annealed device exhibited a reasonably high μ<SUB>FE</SUB>, low subthreshold gate swing (SS), <I>V</I><SUB>th</SUB>, and <I>I</I><SUB>on/off</SUB> of 6.0 cm<SUP>2</SUP>/(V s), 0.28 V/decade, 0.58 V, and 4.0 × 10<SUP>7</SUP>, respectively. The effects of dark negative bias stress (NBS) and negative bias illumination stress (NBIS) on the degradation of transfer characteristics of ZTO TFTs were also investigated. The instability of <I>V</I><SUB>th</SUB> values of the ZTO TFTs under NBS and NBIS conditions was suppressed with increasing annealing temperature. To better understand the charge trapping mechanism, the dynamics of <I>V</I><SUB>th</SUB> shift with NBS and NBIS time for all ZTO TFTs was analyzed on the basis of the stretched exponential relaxation. The negative <I>V</I><SUB>th</SUB> shift for each transistor was accelerated under NBIS conditions compared to NBS, which resulted in a higher dispersion parameter and smaller relaxation time for NBIS degradation. The relaxation time for NBS and NBIS instability increased with increasing annealing temperature, which is discussed on the basis of the transition mechanism of oxygen vacancy defects.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2013/aamick.2013.5.issue-8/am400110y/production/images/medium/am-2013-00110y_0013.gif'></P>