http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Amyloid β‐induced elevation of O‐GlcNAcylated c‐Fos promotes neuronal cell death
Choi, Heesun,Kim, Chaeyoung,Song, Hyundong,Cha, Moon‐,Yong,Cho, Hyun Jin,Son, Sung Min,Kim, Haeng Jun,Mook‐,Jung, Inhee BLACKWELL PUBLISHING 2019 Aging Cell Vol.18 No.1
<P><B>Abstract</B></P><P>Alzheimer's disease (AD) is an age‐related neurodegenerative disease characterized by progressive memory loss resulting from cumulative neuronal cell death. O‐linked β‐N‐acetyl glucosamine (O‐GlcNAc) modification of the proteins reflecting glucose metabolism is altered in the brains of patients with AD. However, the link between altered O‐GlcNAc modification and neuronal cell death in AD is poorly understood. Here, we examined the regulation of O‐GlcNAcylation of c‐Fos and the effects of O‐GlcNAcylated c‐Fos on neuronal cell death during AD pathogenesis. We found that amyloid beta (Aβ)‐induced O‐GlcNAcylation on serine‐56 and 57 of c‐Fos was resulted from decreased interaction between c‐Fos and O‐GlcNAcase and promoted neuronal cell death. O‐GlcNAcylated c‐Fos increased its stability and potentiated the transcriptional activity through higher interaction with c‐Jun, resulting in induction of Bim expression leading to neuronal cell death. Taken together, Aβ‐induced O‐GlcNAcylation of c‐Fos plays an important role in neuronal cell death during the pathogenesis of AD.</P>
Choi, Kyunghee,Lee, Kimoon,Yu, Sanghyuck,Oh, Sehoon,Choi, Hyoung Joon,Bae, Heesun,Im, Seongil American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.24
<P>Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe<SUB>2</SUB> using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe<SUB>2</SUB> can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect Γ-K and Γ-Λ transitions as well as the direct K-K transition are clearly resolved in multilayer WSe<SUB>2</SUB> by PECCS.</P> [FIG OMISSION]</BR>
Relaxation model for the p -Laplacian problem with stiffness
Choi, Heesun,Kim, Hongjoong,Laforest, Marc Elsevier 2018 Journal of computational and applied mathematics Vol.344 No.-
<P><B>Abstract</B></P> <P>This paper proposes a new numerical scheme in 1-D for the p -Laplacian problem for the electromagnetic effects in a high-temperature Type II superconductors. The scheme is obtained by applying a relaxation approximation to the nonlinear derivatives in the problem. The new relaxation scheme achieves highly accurate results even for large p that makes the p -Laplacian flux stiff. The scheme is novel in that it is high-order accurate and predicts physically correct non-oscillatory magnetic fronts within these conductors, the later of which is not found by finite element approximate solutions done by the engineering community. The work is an extension of previous work on relaxation schemes applied to degenerate parabolic problems. Numerical tests are presented to validate the performance of the new scheme.</P>
Choi, Yoo-Jin,Bae, Seung-Muk,Kim, Jae-Hwan,Kim, Eui-Hyun,Hwang, Hee-Soo,Park, Jeong-Woo,Yang, Heesun,Choi, Eunsoo,Hwang, Jin-Ha Elsevier 2018 CERAMICS INTERNATIONAL Vol.44 No.2
<P><B>Abstract</B></P> <P>DIPAS (di-isopropylamino silane, H<SUB>3</SUB>Si[N(C<SUB>3</SUB>H<SUB>7</SUB>)<SUB>2</SUB>]) and O<SUB>2</SUB> plasma were employed, using plasma-enhanced atomic layer deposition (PEALD), to deposit silicon oxide to function as the gate dielectric at low temperature, i.e., below 200°C. The superior amorphous SiO<SUB>2</SUB> thin films were deposited through the self-limiting reactions of atomic layer deposition with a deposition rate of 0.135nm/cycle between 125 and 200°C. PEALD-based SiO<SUB>2</SUB> thin layer films were applied to amorphous oxide thin film transistors constructed from amorphous In-Ga-Zn-O (IGZO) oxide layers, which functioned as channel layers in the bottom-gated thin film transistor (TFT) structure, with the aim of fabricating transparent electronics. The SiO<SUB>2</SUB> gate dielectric exhibited the highest TFT performance through the fabrication of heavily doped n-type Si substrates, with a saturation mobility of 16.42cm<SUP>2</SUP>/V·s, threshold voltage of 2.95V and large on/off current ratio of 3.69 × 10<SUP>8</SUP>. Ultimately, the highly doped Si was combined with the ALD-based SiO<SUB>2</SUB> gate dielectric layers, leading to a saturation mobility of 16.42cm<SUP>2</SUP>/V·s, threshold voltage of 2.95V, S-slope of 0.1944, and on/off current ratio of 3.69 × 10<SUP>8</SUP>. Semi-transparent and transparent TFTs were fabricated and provided saturation mobilities of 22.18 and 24.29cm<SUP>2</SUP>/V·s, threshold voltages of 4.18 and 2.17V, S-slopes of 0.1944 and 0.1945, and on/off current ratios of 9.63 × 10<SUP>8</SUP> and 1.03 × 10<SUP>7</SUP>, respectively.</P>
Hyponatraemia and its prognosis in acute heart failure is related to right ventricular dysfunction
Lee, Heesun,Lee, Sang Eun,Park, Chan Soon,Park, Jin Joo,Lee, Ga Yeon,Kim, Min-Seok,Choi, Jin-Oh,Cho, Hyun-jai,Lee, Hae-Young,Choi, Dong-Ju,Jeon, Eun-Seok,Kim, Jae-Joong,Oh, Byung-Hee BMJ Publishing Group Ltd 2018 Heart Vol.104 No.20
<P>Trial registration number Korean Acute Heart Failure registry NCT01389843; Results.</P>