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Burungale, V.V.,Satale, V.V.,More, A.J.,Sharma, K.K.K.,Kamble, A.S.,Kim, J.H.,Patil, P.S. Academic Press 2016 JOURNAL OF COLLOID AND INTERFACE SCIENCE - Vol.470 No.-
Exotic hierarchical rutile TiO<SUB>2</SUB> nanostructures are synthesized by surfactant free single step hydrothermal route. The effect of reaction temperature, ranging from 140<SUP>o</SUP>C to 200<SUP>o</SUP>C on the properties of the synthesized rutile-TiO<SUB>2</SUB> is investigated. The synthesized rutile-TiO<SUB>2</SUB> nanostructures are characterized using X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy and scanning electron microscopy techniques. The deposited TiO<SUB>2</SUB> samples are found to be photoelectrochemically active and the best photoelectrochemical performance (0.95+/-0.05%) is obtained for the sample deposited at 180<SUP>o</SUP>C. A possible temperature dependent growth mechanism resulting in photochemically active TiO<SUB>2</SUB> nanostructure thin films is proposed.
Chemically synthesized PbS Nano particulate thin films for a rapid NO<sub>2</sub> gas sensor
Burungale, Vishal V.,Devan, Rupesh S.,Pawar, Sachin A.,Harale, Namdev S.,Patil, Vithoba L.,Rao, V. K.,Ma, Yuan-Ron,Eun Ae, Jo,Kim, Jin H.,Patil, Pramod S. De Gruyter 2016 MATERIALS SCIENCE -WROCLAW- Vol.34 No.1
<P><B>Abstract</B></P><P>Rapid NO<SUB>2</SUB>gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO<SUB>2</SUB>gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO<SUB>2</SUB>gas was measured at different operating temperatures, from 50 to 200<SUP>°</SUP>C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150<SUP>°</SUP>C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO<SUB>2</SUB>at 150<SUP>°</SUP>C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.</P>
Minjeong Lee(Minjeong Lee),Hyojung Bae(Hyojung Bae),Hokyun Rho(Hokyun Rho),Vishal Burungale(Vishal Burungale ),Pratik Mane(Pratik Mane ),Chaewon Seong(Chaewon Seong),Jun-Seok Ha(Jun-Seok Ha) 한국마이크로전자및패키징학회 2020 마이크로전자 및 패키징학회지 Vol.27 No.4
The Cu/Cu2O/CuO photoelectrode has been successfully fabricated by Rapid Thermal Annealing technique. The structural characterization of fabricated photoelectrode was performed using X-Ray diffraction, while elemental composition of the prepared material has been checked with X-Ray Photoelectron Spectroscopy. The synthesis parameters are optimized on the basis of photoelectrochemical performance. The best photoelectrochemical performance has been observed for the Cu/Cu2O/CuO photoelectrode fabricated at 550 ℃ oxidation temperature and oxidation time of 50 seconds with highest photocurrent density of -3 mA/㎠ at -0.13 V vs. RHE.
산소발생용 Cobalt–phosphate (Co–pi) 촉매를 이용한 Gallium Nitride (GaN) 광전극의 광전기화학적 특성
성채원,배효정,Vishal Vilas Burungale,하준석 한국마이크로전자및패키징학회 2020 마이크로전자 및 패키징학회지 Vol.27 No.2
In the photoelectrochemical (PEC) water splitting, GaN is one of the most promising photoanode materials due to high stability in electrolytes and adjustable energy band position. However, the application of GaN is limited because of low efficiency. To improve solar to hydrogen conversion efficiency, we introduce a Cobalt Phosphate (Copi) catalyst by photo-electrodeposition. The Co-pi deposition GaN were characterized by SEM, EDS, and XPS, respectively, which illustrated that Co-pi was successfully decorated on the surface of GaN. PEC measurement showed that photocurrent density of GaN was 0.5 mA/cm2 and that of Co-pi deposited GaN was 0.75 mA/cm2. Impedance and Mott-Schottky measurements were performed, and as a result of the measurement, polarization resistance (Rp) and increased donor concentration (ND) values decreased from 50.35 Ω to 34.16 Ω were confirmed. As a result of analyzing the surface components before and after the water decomposition, it was confirmed that the Co-pi catalyst is stable because Co-pi remains even after the water decomposition. Through this, it was confirmed that Co-pi is effective as a catalyst for improving GaN efficiency, and when applied as a catalyst to other photoelectrodes, it is considered that the efficiency of the PEC system can be improved. 광전기화학적 물분해에서 광전극으로 이용되는 GaN은 전해질에 대해 높은 안정성을 가지고 있으며 물의 산화 환원준위를 포함하고 있어 외부전압 없이 물분해가 가능하다. 그러나 GaN 광전극의 경우, 재료 자체의 효율이 낮아상용화하기에는 부족한 실정이다. 본연구에서는 광효율을 향상시키기 위해 Cobalt phosphate(Co-pi) 촉매를 광전기증착(Photoelectro-deposition)방법을 통하여 GaN 광전극에 도입하였다. Co-pi 촉매 증착 후 SEM, EDS, XPS분석을 진행하여 Co-pi의증착 여부및증착 정도를 확인하고, Potentiostat를이용해 PEC 특성을 분석하였다. SEM 이미지를 통해 Copi가GaN 표면 위에 20~25 nm 사이즈의 클러스터 형태로 고르게 증착되어 있는 것을 확인하였다. EDS 및 XPS 분석을통해 GaN 표면의입자가 Co-pi임을확인하였다. 이후측정된 PEC 특성에서 Co-pi를증착시킨후 0.5 mA/cm2에서 0.75 mA/cm2로향상된 광전류밀도 값을 얻을수있었다. 향상된 원인을 밝히기 위하여, 임피던스및 Mott-Schottky 측정을진행하였고, 측정 결과, 50.35 Ω에서 34.16 Ω으로 감소한 분극저항(Rp)과증가된 donor 농도(ND) 값을 확인하였다. 물분해전후, 표면 성분을 분석한 결과 물분해 후에도 Co-pi가남아있음으로써 Co-pi 촉매가 안정적이라는 것을 확인하였다. 이를 통해, Co-pi가 GaN의 효율 향상을 위한 촉매로서 효과가 있음을 확인하였고, 다른 광전극에 촉매로써 적용시켰을 경우, PEC 시스템의 효율을 향상시킬 수 있을 것으로 판단된다.
Hydrothermal Synthesis of CaMn2O4·xH2O Nanorods as Co-Catalysts on GaN Nanowire Photoanode
Bae Hyojung,Kim Hyunggu,Burungale Vishal,Min Jung‐Wook,Cha An‐na,Rho Hokyun,Ryu Sang‐Wan,Kang Soon Hyung,Ha Jun‐Seok 대한화학회 2021 Bulletin of the Korean Chemical Society Vol.42 No.6
Co-catalysts play a crucial role in photoelectrochemical (PEC) water splitting reactions by improving slow kinetics and reducing surface recombination, thereby enhancing PEC performance. However, achieving a well-defined interface between low-dimensional semiconductors and co-catalysts is challenging due to difficulties in depositing a uniform co-catalyst layer and attaining mixed and disordered states. CaMn2O4 xH2O has been extensively studied for the purpose of decreasing the overpotential in the oxygen evolution reaction. In this study, CaMn2O4xH2O was synthesized via a hydrothermal method, and loaded onto a GaN nanowire (NW) photoanode. Optimized CaMn2O4xH2O layers were decorated on GaN NWs to create CaMn2O4@GaN, which delivered a maximum photocurrent of 0.4 mA/cm2 at 0 V vs. the Ag/AgCl reference electrode under an AM 1.5 G solar simulator, 1.6-fold higher than that (0.25 mA/cm2) of bare GaN NWs. Thus, highly efficient and stable PEC water splitting was achieved on the GaN NW photoanode.
구리 기반 전극을 활용한 전기화학적 이산화탄소 환원 및 C2+ 화합물 생성 기술
허지원,성채원,Vishal Burungale,Pratik Mane,이무성,하준석 한국마이크로전자및패키징학회 2023 마이크로전자 및 패키징학회지 Vol.30 No.4
Amidst escalating global warming fueled by indiscriminate fossil fuel consumption, concerted efforts are underway worldwide to mitigate atmospheric carbon dioxide (CO2) levels. Electrochemical CO2 reduction technology is recognized as a promising and environmentally friendly approach to convert CO2 into valuable hydrocarbon compounds, deemed essential for achieving carbon neutrality. Copper, among the various materials used as CO2 reduction electrodes, is known as the sole metal capable of generating C2+ compounds. However, low conversion efficiency and selectivity have hindered its widespread commercialization. This review highlights diverse research endeavors to address these challenges. It explores various studies focused on utilizing copper-based electrodes for CO2 reduction, offering insights into potential solutions for advancing this crucial technology.
Ni-Pd-CNT Nanoalloys에서 성장한 α-Ga2O3의 특성분석
차안나,이기업,김형구,성채원,배효정,노호균,Vishal Vilas Burungale,하준석 한국마이크로전자및패키징학회 2021 마이크로전자 및 패키징학회지 Vol.28 No.4
This paper demonstrates the utility of the Ni-Pd and carbon-nanotube (Ni-Pd-CNT)-based nanoalloy to improve the α-Ga2O3 crystal quality using the halide-vapor-phase epitaxy (HVPE) method. As result, the overall thickness of the α-Ga2O3 epitaxial layer increased from a Ni electroless plating time of 40 s to 11 μm after growth. In addition, the surface morphologies of the α-Ga2O3 epilayers remained flat and crack-free. The full-width half-maximum results of the X-ray diffraction analysis revealed that the (1014) diffraction patterns decreased with increasing nominal thickness. 본 연구에서는 HVPE 방법을 사용하여 Ni-Pd and Carbon-Nanotube nanoalloys (Ni-Pd-CNT) 위에 α-Ga2O3 을 성장시켜 Ni-Pd-CNT에 따른 효과를 확인하였다. 그 결과, 무전해 Ni 도금 시간 40초에서 성장한 α-Ga2O3 에피층의두께는 11 μm로 확인되었다. 또한, α-Ga2O3 에피층의 표면 형태는 균열 발생 없이 기판에 대한 우수한 접착력을 보여주었다. 결과적으로, 성장과정에서 발생한 수평 성장에 의해 α-Ga2O3 대의 비대칭면인 (1014) FWMH 값을 크게 감소할 수있었다.