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Chemically improved high performance printed indium gallium zinc oxide thin-film transistors
Jeong, Sunho,Lee, Ji-Yoon,Lee, Sun Sook,Oh, Se-Wook,Lee, Hyun Ho,Seo, Yeong-Hui,Ryu, Beyong-Hwan,Choi, Youngmin Royal Society of Chemistry 2011 Journal of materials chemistry Vol.21 No.43
<P>With the aim of facilitating the high performance printed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs), we present the heretofore unrecognized chemical methodology for tailoring the chemical structures of printable IGZO semiconductors through incorporation of ethylene glycol in sol–gel derived precursor solutions. With the optimal composition of ethylene glycol, the device performance of TFT employing the printed IGZO semiconducting layer annealed at 400 °C is significantly improved with the field-effect saturation mobility of 4.9 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>. In addition, by lowering the contact resistance between the source/drain electrode and printed IGZO semiconducting layer, the device performance is further improved with the field-effect saturation mobility of 7.6 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>.</P> <P>Graphic Abstract</P><P>With the aim of facilitating the high performance printed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs), we present the heretofore unrecognized chemical methodology for tailoring the chemical structures of printable IGZO semiconductors through incorporation of ethylene glycol in sol–gel derived precursor solutions. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c1jm13767k'> </P>
Jeong, Sunho,Lee, Ji-Yoon,Lee, Sun Sook,Choi, Youngmin,Ryu, Beyong-Hwan American Chemical Society 2011 The Journal of Physical Chemistry Part C Vol.115 No.23
<P>Sol–gel-derived oxide semiconductors annealed at a low temperature have been of great interest recently in various thin-film transistor (TFT) applications. However, studies on the influence of metal salt precursor on sol–gel-derived oxide semiconductor annealed at a low temperature have not yet been reported. In this study, the impact of metal salt precursor on the chemical structure evolution of Ga-doped In<SUB>2</SUB>O<SUB>3</SUB> (IGO) semiconductor and electrical performance of thin-film transistors with a corresponding oxide semiconductor is investigated. X-ray photoelectron spectroscopy (XPS)-based chemical structure analysis is carried out in conjunction with an understanding of the electrical performance of device. It is revealed that in addition to the thermally enhanced evolution of metal oxide chemical structure, the impurities due to the incomplete thermal decomposition of metal salt precursor do not only hinder the formation of metal oxide lattice, resulting in an electrically inactive oxide semiconductor, but also significantly deteriorate the electrical performance, such as field-effect mobility, subthreshold swing, and on/off current ratio, of thin-film transistor.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2011/jpccck.2011.115.issue-23/jp202522s/production/images/medium/jp-2011-02522s_0010.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp202522s'>ACS Electronic Supporting Info</A></P>
Seo, Yeong-Hui,Lee, Byung-Seok,Jo, Yejin,Kim, Han-Gyeol,Choi, Youngmin,Ahn, SeJin,Yoon, KyungHoon,Woo, Kyoohee,Moon, Jooho,Ryu, Beyong-Hwan,Jeong, Sunho American Chemical Society 2013 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.117 No.19
<P>Multiphase CuInSe<SUB>2</SUB> (CISe) nanoparticles including the secondary CuSe phase are synthesized by a polyol-based, microwave-assisted solvothermal method. It is demonstrated that the reaction chemistry involving formation of the CISe phase is adjusted depending on the heretofore unrecognized chemical nature of polyol solvent, allowing for formation of secondary CuSe phase-incorporated multiphase CISe nanoparticles. The critical role of CuSe phase in generating the pore-free, dense CISe absorber layer for a high-performance thin-film photovoltaic device is investigated through the comparative study on CISe absorber layers derived from both multiphase and single-phase CISe nanoparticles.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2013/jpccck.2013.117.issue-19/jp310434j/production/images/medium/jp-2012-10434j_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp310434j'>ACS Electronic Supporting Info</A></P>
정태혁(Tae-Hyeok Jeong),김성권(Seong-Kwon Ki),김규린(Gyu-Rin Kim),최선일(Seon-Il Choi),조경근(Kyoung-Geun Cho),이준우(Jun-Woo Lee),조훈희(Hun-Hee Cho),장준원(Jun-Won Chang),황병욱(Beyong-Uk Hwang),신희준(Hui-Jun Shin),강태구(Tae-Koo 대한전기학회 2021 대한전기학회 학술대회 논문집 Vol.2021 No.11
본 논문은 자율주행을 위한 Camera, LiDAR, GPS와 같은 센서들을 모바일 플랫폼에 배치해 인지, 판단, 제어로 자율주행 시스템을 제안한다. 제안된 시스템은 각 상황 프로세스를 병렬적으로 구성해 실시간으로 다양한 상황에 대비하고, K-City(한국형 자율주행 실험도시)에서 도심 환경 속 모의실험을 통해 검증하였다. 본 연구를 통해 개발한 자율주행 시스템이 실제 도심 환경에서 적용될 수 있길 기대한다.
Hong, Gyu Ri,Lee, Sun Sook,Park, Hye Jin,Jo, Yejin,Kim, Ju Young,Lee, Hoi Sung,Kang, Yun Chan,Ryu, Beyong-Hwan,Song, Aeran,Chung, Kwun-Bum,Choi, Youngmin,Jeong, Sunho American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.16
<P>In recent decades, solution-processable, printable oxide thin-film transistors have garnered a tremendous amount of attention given their potential for use in low-cost, large-area electronics. However, printable metallic source/drain electrodes undergo undesirable electrical/thermal migration at an interfacial stack of the oxide semiconductor and metal electrode. In this study, we report oleic acid-capped Ag nanoparticles that effectively suppress the significant Ag migration and facilitate high field-effect mobilities in oxide transistors. The origin of the role of surface-capped Ag nanoparticles is clarified with comparative studies based on X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.</P>
Hong, Gyu Ri,Lee, Sun Sook,Jo, Yejin,Choi, Min Jun,Kang, Yun Chan,Ryu, Beyong-Hwan,Chung, Kwun-Bum,Choi, Youngmin,Jeong, Sunho American Chemical Society 2016 ACS APPLIED MATERIALS & INTERFACES Vol.8 No.44
<P>In this study, we report for the first time a simple bar-coating process of soluble metal oxide semiconductors, consuming the 0.1 g of precursor solution in 4 in. sized devices with a cost of only $0.05. To resolve the issue of critical degradation in device performance observable in slow-evaporation-based film formation processes, we incorporate the unprecedentedly developed, poly(acrylic acid)-decorated multiwalled carbon nanotubes (MWNTs) in oxide semiconductors. It is demonstrated that a field-effect mobility is improved to the value of 7.34 cm(2)/(V s) (improvement by a factor of 2) without any critical variation in threshold voltage and on/off current ratio.</P>