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RISS 인기검색어
- 검색키워드
- 저자 : Anurag Gaur (검색결과 2 건)
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Design, Simulation and Analysis of a Slotted RF MEMS Switch
Sai Pranav Chokkara,Anurag Gaur,K. Girija Sravani,B. Balaji,K. Srinivasa Rao 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.4
In this paper, a capacitive RF MEMS switch working in shunt confi guration is designed and optimized using FEM software. An electrostatically actuated fixed–fi xed type shunt switch is optimised for low pull-in voltage. The thickness of the membrane and the actuating gap is optimized for low pull-in voltage and high capacitance ratio. The effect of diff erent meanders, perforations, slits and device dimensions were also analyzed. The fi nal device has a pull-in voltage of 3.74 V, down capacitance of 28.6 pF, up capacitance of 160 fF and a capacitance ratio of 178.125. The switch shows peak isolation of 43.3 dB at 39.7 GHz and isolation better than 30 dB over the entire K a band.
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Investigation of phase segregation in Zn1−xMgxO systems
Parmod Kumar,Jitendra Pal Singh,Yogesh Kumar,Anurag Gaur,Hitendra K. Malik,K. Asokan 한국물리학회 2012 Current Applied Physics Vol.12 No.4
The present work reports on the synthesis of the Zn1-xMgxO (x = 0, 0.02, 0.05, 0.10, 0.15 and 0.20)samples by solegel method and the investigations on their structural, morphological and optical properties. X-ray diffraction (XRD) data analysis confirms the formation of pure ZnO phase below 10% Mg doping and MgO related phases appears in 10% doped sample indicating that phase segregation of MgO starts at x ≥ 0.10 samples. The phase segregation observed through XRD analysis is also supported by results from Scanning Electron Microscopy (SEM), Raman spectroscopy and photoluminescence studies. Furthermore, the enhancement in optical band gap, with Mg doping, from 3.1 ± 0.1 eV to 3.5 ± 0.1 eV has been observed through UVeVis spectroscopic analysis. Above results have been discussed on the basis of defects level observed through Raman and photoluminscence studies. The present work reports on the synthesis of the Zn1-xMgxO (x = 0, 0.02, 0.05, 0.10, 0.15 and 0.20)samples by solegel method and the investigations on their structural, morphological and optical properties. X-ray diffraction (XRD) data analysis confirms the formation of pure ZnO phase below 10% Mg doping and MgO related phases appears in 10% doped sample indicating that phase segregation of MgO starts at x ≥ 0.10 samples. The phase segregation observed through XRD analysis is also supported by results from Scanning Electron Microscopy (SEM), Raman spectroscopy and photoluminescence studies. Furthermore, the enhancement in optical band gap, with Mg doping, from 3.1 ± 0.1 eV to 3.5 ± 0.1 eV has been observed through UVeVis spectroscopic analysis. Above results have been discussed on the basis of defects level observed through Raman and photoluminscence studies.
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