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“New Engineering Education” in China: a national technological imaginary of the Chinese Dream
Aaron Koh,Tengteng Zhuang 서울대학교 교육연구소 2021 Asia Pacific Education Review Vol.22 No.1
This paper examines the “imaginaries” taking place in New Engineering Education (NEE). The NEE is the most recent reform of the engineering education sector in China and is used to interrogate the more encompassing backdrop of the country’s national imaginary, the “Chinese Dream.” Further, this paper analyzes three important policy documents that constitute the blueprint of the NEE. Drawing on Charles Taylor’s concept of the “social imaginary” and using critical discourse analysis, a close analysis of the discursive construction of the technological and national elements in the policy texts is carried out. This combinatory theoretical and analytical framework is used to examine how a normative vision and ideology of the development of engineering education is constructed as taking a “new” direction. In undertaking this policy analysis, this paper demonstrates how a rising power is revolutionizing its engineering education as a resource, coupled with the ideological “social (national) imagination” of the Chinese Dream, to extend its power and geopolitical positioning in a competitive and globalized economy.
The Smart Access Memory:An Intelligent RAM for Pattern Recognition
Koh,Hwa Su,Ryu,Myung Sun,Kim,Mi Yang,Hong,Hyun Sung,Kim,Hack Soo,Ahn,Seung Han,Shin,Hyun Jong,Lipman,Aaron,Yang,Woodward 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
The Smart Access Memory(SAM) is IRAM implementation of the K-nearest neighbor algorithm which requires high bandwidth between memory and processing units. The SAM chip is designed and implemented to retrieve the K nearest neighbors to query point in a database of example data vectors by integrating 64 bit-serial processor, 4096 sorting units and 16Mb of memory using a 0.35 ㎛ commercial DRAM process with 16mm x 16mm chip size. With highly optimizing the processing units, the operating frequency up to 200MHz is obtained even in 1.0㎛ drawn dimension. So the internal memory bandwidth up to 12.8 Gb/s is achieved.