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RISS 인기검색어
- 검색키워드
- 저자 : A. Madhankumar (검색결과 3 건)
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A. Madhankumar,S. Nagarajan,N. Rajendran,T. Nishimura 대한금속·재료학회 2012 METALS AND MATERIALS International Vol.18 No.6
This work examines the effect of silicon (Si) nanoparticles on the corrosion protection performance of epoxy coating over carbon steel by Electrochemical Impedance Spectroscopy (EIS) and Transmission Electron Microscopy. The EIS was performed in a 0.1 M NaCl solution after a wet/dry cyclic corrosion and continuous immersion test. The addition of Si nanoparticles increased the film resistance (Rf) and the charge transfer resistance (Rct) of the coated steel. The surface analysis showed that uniform and fine Si-Fe complex oxides layers were formed acting as barrier layers that enhanced the corrosion protection of the coated steel in the wet/dry cyclic corrosion test. The results of the EIS of the coated steel with Si nanoparticles suggested that Si nanoparticles play a beneficial role in enhancing the corrosion resistance of organic coated steel.
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I.B. Obot,A. Madhankumar 한국공업화학회 2015 Journal of Industrial and Engineering Chemistry Vol.25 No.-
The corrosion inhibition behaviour of tannic acid (TA), gallic acid (GA) and their blends on mild steel in 1 M HCl solution was studied via electrochemical methods, namely, polarization (Tafel plots) and electrochemical impedance spectroscopy (EIS). The surface morphology of mild steel in 1 M HCl, TA alone, and in combination with GA was elucidated using scanning electron microscopy (SEM). The results show that TA can protect mild steel from acid corrosion better than GA. However, inhibition effect of TA can be enhanced by its combination with GA. The adsorption behaviour of TA against steel corrosion obeyed Langmuir adsorption isotherm. Furthermore, polarization results suggest that TA and GA blends behaves as mixed-type inhibitor of predominant anodic effect. EIS results reveal that the charge transfer resistance value of the steel inhibited by TA in combination with GA is significantly higher than that of steel inhibited by TA alone. The SEM images confirmed the enhanced film formation on the steel surface in the presence of TA and GA blended in the ratio 9:1 when compared with TA alone. Quantum chemical calculations have been used to provide insights into the mechanism of interaction of TA and GA on mild steel.
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Ilanchezhiyan, P.,Mohan Kumar, G.,Xiao, Fu,Madhankumar, A.,Siva, C.,Yuldashev, Shavkat U.,Cho, H.D.,Kang, T.W. North-Holland 2018 Solar Energy Materials and Solar Cells Vol. No.
<P><B>Abstract</B></P> <P>The demand for low-cost high efficient photoelectronic devices tends to drive the present need for investigations on advanced multi-functional semiconducting nanostructures. In this regard, the physico-chemical traits of sonochemically processed ZnTe nanostructures and hydrothermally grown ZnO nanostructures were studied using Raman, UV–vis absorbance, X-ray photoelectron spectroscopy and high resolution microscopic tools. The p-n ZnTe/ZnO heterojunctions were then fabricated via spin casting a colloidal ZnTe suspension on periodically aligned ZnO nanowires and investigated for their photoelectronic functionalities. The current-voltage (I-V) characteristics revealed an obvious rectifying behaviour with the forward current and rectification ratio getting improved on lowering the threshold voltages. The series resistance of the diodes were additionally studied using the dV/dlnI derivate plots. The stability of the diodes were also affirmed using their time-dependent photoresponse characteristics, which actually suggested the improved and effective separation of photo generated electron hole pairs across the interface. Finally, the ZnTe/ZnO heterojunction behaviour was assimilated using the electrochemical impedance spectroscopic (EIS) results that were studied individually for ZnTe and ZnO nanostructures and collectively across ZnTe/ZnO heterostructure.</P> <P><B>Highlights</B></P> <P> <UL> <LI> ZnTe integrated ZnO nanowire diodes revealed excellent rectifying behaviour/rectification ratio. </LI> <LI> Series resistance of diodes were studied using dV/dlnI derivate plots. </LI> <LI> Stability of devices were evidenced through their photoresponse characteristics. </LI> <LI> Electrochemical data revealed improved interfacial charge transfer along the heterostructure. </LI> </UL> </P>
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