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RISS 인기검색어
- 검색키워드
- 저자 : 金明寧(Myung-Nyung Kim) (검색결과 17 건)
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金明寧 大田工業大學 1988 한밭대학교 논문집 Vol.5 No.2
Influence of velocity and temperature on the streaming electrification phenomena in transformer insulating oil is investigated by injection method. Leakage current is increased slightly with increasing temperature in the temperature range 20 to 80℃ at low flow rate, however, it shows a peak in the temperature 40 to 60℃ at high flow rate. Leakage current is also increased linearly with increasing flow rate in the flow rate range one to three 1/mln but thereafter, it is increased abruptly with increasing flow rate.
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金明寧 大田工業專門大學 1982 論文集 Vol.31 No.-
Expressions for the photovoltage and photocurrent of a intensely illuminated P-N junction solar cell are obtained from solving the ambipolar diffusion equation. A complete boundary condition is derived for the junction, which is appropriate for all love]s of injection. In the open and short circuit, theories are adduced by earlier those. These will be used to explain the experimental results of earlier workers.
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김명녕,권순석,이정환 大田産業大學校 2002 한밭대학교 논문집 Vol.19 No.-
In this paper, the frequency characteristics of flat fluorescent lamp(FFL) using ultra-violet generated from gas discharge are studied. The lamp is constructed of a simple structure with insulator layer, phosphor layer, and gas gap(1.1 [㎜]). The firing voltage is decreased as the frequency is increased. It is considered that this tendency is resulted from the space charge effect due to Xe and Ar positive ions trapped in gas gap. Decreasing of uniform voltage at the region of higher drive frequency is due to the remaining space charges which are produced by preceding period. Increasing the drive frequency, the luminance is also increased because ultraviolet generated in gas gap is increased. The luminance in FFL using Xe of discharge gas is shown 2700[cd/㎡] at the operation point of 700[V_rms], 80[㎑]. Uniformity is obtained 96[%] over the entire lamp surface. Hence, the maximum luminous efficiency is obtained 5[㏐/W].
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金明寧 大田開放大學 1986 論文集 Vol.5 No.-
This paper describesthe mechanism of tree initiation in low density polyethylene for AC voltages. Experimental results of remperature dependence of rate of tree initiation, relation between applied voltage and time to tree initiation at 50%, and relation betwin Δx and applied time of voltage indicate that 1. equation t=AV^-n is formed from relatio between applied voltage and time to tree initiation at 50%, and the value of n is larger velow -10˚C than 20 ~ 80˚C. 2. tree length is grown to rising appled voltage, but not grown to applied time for the same applied voltage. 3. temperature rising reduce the initial electrical tree voltage.
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有機化合物이 添加된 低密度폴리에틸렌에서 交流電壓트리特性의 溫度依存性
金明寧 大田開放大學 1987 論文集 Vol.6 No.-
The paper describes the temperature dependence of electrical tree initiation on different organic additives in low density polyethylene, for AC voltages. Experimental results of characteristic voltage versus temperature by different additives indicates that. 1. temperature rising reduce the initial electrical tree voltage for different organic additives. 2. the initiation tree voltage is suppressed with polar organic aditives at room temperature, but around the 80℃ the voltage is reduced as well as the nonpolar additives. 3. only with suitable additive amount of m-Cresol in L.D.P.E. is suppressed in effect the propagation of tree at room temperature.
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金明寧 大田工業專門大學 1983 論文集 Vol.33 No.-
Equivalent circuits are presented for the description of thin-film MIS capacitances of wide and small bandgab thin-film semiconductors, operated if depletion and inversion. Special attention is paid to paid and InSb and CdTe MIS capacitances. The possible influence of bulk traps in these semiconductors is taken into account. It is found that the inversion layer of InSb has a time constant of the order of the minority carrier life time, while the time constant of the CdSe inversion layer is so large that an inversion layer in CdSe will probably never occur.
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권순석,김명녕,이상래,황문구 한밭대학교 2004 한밭대학교 논문집 Vol.21 No.-
이 논문에서는 P₂O_(5)-ZnO-BaO계와 SiO₂-ZnO-B₂O₃계의 반사특성과 유전특성이 연구 되었다. P₂O_(5)-ZnO-BaO계의 반사율은 SiO₂-ZnO- B₂O₃계의 반사율보다 낮게 나타났고, TiO₂의 함유량이 증가할수록 반사율이 감소되었다. 또한 P₂O_(5)-ZnO-BaO계의 유전율은 SiO₂-ZnO-B₂O₃계의 유전율보다 높은 값을 보였고, TiO₂ 함유량이 증가함에 따라 두 계 모두 유전율이 증가되었다. 이 현상은 공간전하효과로 설명될 수 있다. 본 연구의 결과는 높은 반사율과 높은 절연파괴 강도가 요구되는 플라즈마 디스플레이(PDP)의 하판 유전체, 또는 플라즈마 현상을 응용하는 조명 및 광고용 기구의 반사 유전체로서 응용이 가능할 것으로 기대된다. In this paper, the reflectance and the dielectric characteristics for P₂O_(5)-ZnO-BaO system and SiO₂-ZnO-B₂O₃ system have been investigated as a function of contents of TiO₂. The reflectance was decreased with increasing the contents of TiO₂ contents, and the reflectance of P₂O_(5)-ZnO-BaO system was lower than that of SiO₂-ZnO-B₂O₃ system. The dielectric constant of P₂O_(5)-ZnO-BaO system was higher than SiO₂-ZnO-B₂O₃ system, and the dielectric constant in the both system was increased with increasing of TiO₂ contents. This could be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.
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HgCdTe 제작 다이오드 어레이의 열처리에 따른 전기적 특성
이정환,권순석,김명녕,이상래,황문구 大田産業大學校 2001 한밭대학교 논문집 Vol.18 No.-
This paper is investigated on the study of uniformity improvement and electrical characteristics for the 1×128 diode array used Hg^0.7Cd^0.3Te. The electrical characteristics were measured for the device manufactured by several different annealing processes and temperatures being discrepant from existing method of annealing processes and temperatures. The results of uniformity were improved from 60∼80[%], the rate of existing uniformity, to 99[%]. The results obtained from analyzing and examining the characteristics of current-voltage(I-V) and capacitance-voltage(C-V) are following. First, the reverse current show 6[㎁] or so. It is seemed to be resulted from the decrease of direct tunneling and trap tunneling of the device. Second, when the input bias voltage is zero, the maximum value of reverse resistance show 12[GΩ], and the mean value of reverse resistance show 5[GΩ]. Third, it is shown that the voltage of the maximum value of resistance is shifted 0.1[V] to the reverse direction.
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