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플라즈마 도핑을 이용한 결정질 태양전지 에미터층 형성 연구
유동열,노시철,최정호,김정환,김영철,서화일 한국반도체디스플레이기술학회 2011 반도체디스플레이기술학회지 Vol.10 No.4
In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of 800~900℃ with O_2 ambient using thermal furnace. The junction depth in about 0.35~0.6㎛ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.