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양희정,희정 양,신현정 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
Selective deposition of Co thin films for a TFT gate electrode is carried out by growth with a combination of micro-contact printing and metal organic chemical vapor deposition (MOCVD) at low temperature below 100 C. An octadecyltrichlorosilane (OTS) layer of long chain defined with polydimethylsiloxane (PDMS) stamps was pre-patterned onglass. The patterned OTS area has hydrophobic characteristics while surface on glass has hydrophobic characteristics. The MOCVD Co selective deposition is focused on the difference of incubation time for the react on between functional group and Co precursor. We optimize selective conditions of Co deposition for a gate electrode to reduce the photo mask level. Root mean square (rms) of Co films deposited is 2 nm, enough to use as gate electrode possessing a smooth surface. OTS pattern is decomposed by UV treatment in the range of 280 to 350 nm and then trilayer is continuously created on the sample, which is selectively organized asCo gate electrode on glass. We fabricate a thin film transistor (TFT) of inverse staggered type by using this sample. Reflectance is used to evaluate incubation time for Co deposition and AFM isemployed to confirm the selectivity of Co thin film. The subthreshold slope and on/off current ratio are 0.88 V/decade and 6 × 106, respectively. The electron field-effect mobility at saturation is 0.35 cm2/Vs for Vd = 9 V.